VS-6ESU06-M3
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Vishay Semiconductors
Ultrafast Rectifier, 6 A FRED Pt®
FEATURES
eSMP® Series
• Ultrafast recovery time, reduced Qrr, and soft
recovery
K
K
Anode 1
Cathode
Anode 2
1
• 175 °C maximum operating junction temperature
• For PFC, CRM snubber operation
• Low forward voltage drop
• Low leakage current
2
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMPC (TO-277A)
• Meets JESD 201 class 2 whisker test
LINKS TO ADDITIONAL RESOURCES
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3D 3D
DESCRIPTION / APPLICATIONS
3D Models
State of the art ultrafast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and ultra fast recovery time.
PRIMARY CHARACTERISTICS
IF(AV)
6A
VR
600 V
VF at IF
0.95 V
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
trr (typ.)
42 ns
TJ max.
175 °C
Package
SMPC (TO-277A)
Circuit configuration
Single
These devices are intended for use in PFC, boost, lighting,
in the AC/DC section of SMPS, freewheeling and clamp
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element and snubbers.
MECHANICAL DATA
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Halogen-free, RoHS-compliant
Terminals:
J-STD-002
matte
tin
plated
leads,
solderable
per
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TSp = 150 °C
Non-repetitive peak surge current
IFSM
TJ = 25 °C
Operating junction and storage temperatures
TJ, TStg
VALUES
UNITS
600
V
6
A
120
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
SYMBOL
VBR, VR
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
CT
TEST CONDITIONS
IR = 100 μA
MIN.
TYP.
MAX.
600
-
-
IF = 6 A
-
1.10
1.30
IF = 6 A, TJ = 150 °C
-
0.95
1.15
VR = VR rated
-
-
5
TJ = 150 °C, VR = VR rated
-
25
150
VR = 600 V
-
8
-
UNITS
V
μA
pF
Revision: 19-Jan-2021
Document Number: 94986
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
-
42
-
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
-
-
60
TJ = 25 °C
-
58
-
TJ = 125 °C
UNITS
ns
-
85
-
-
10
-
-
15
-
TJ = 25 °C
-
290
-
TJ = 125 °C
-
620
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
RthJM
-
2.4
3.5
°C/W
Peak recovery current
IRRM
Reverse recovery charge
Qrr
TJ = 25 °C
TJ = 125 °C
IF = 6 A
dIF/dt = 500 A/μs
VR = 400 V
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
Thermal resistance, junction to mount
TEST CONDITIONS
Approximate weight
g
0.0035
oz.
Case style SMPC (TO-277A)
100
NEU6
100
175 °C
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
Marking device
0.1
10
TJ = 175 °C
TJ = 150 °C
1
TJ = 125 °C
TJ = 25 °C
150 °C
10
125 °C
1
0.1
25 °C
0.01
TJ = -40 °C
0.1
0.001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
100
200
300
400
500
600
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 19-Jan-2021
Document Number: 94986
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-6ESU06-M3
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Vishay Semiconductors
10
RMS limit
Average Power Loss (W)
CT - Junction Capacitance (pF)
100
10
8
6
4
2
0
1
0
100
200
300
400
500
600
0
2
4
6
8
10
VR - Reverse Voltage (V)
IF(AV) - Average Forward Current (A)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 5 - Forward Power Loss Characteristics
180
160
140
170
120
trr (ns)
Allowable Case Temperature (°C)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
DC
160
25 °C
80
Square wave (D = 0.50)
80 % rated VR applied
150
125 °C
100
60
40
IF = 6 A
See note (1)
140
20
0
1
2
3
4
5
6
7
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
700
600
125 °C
Qrr (nC)
500
400
25 °C
300
200
IF = 6 A
100
100
1000
dIF/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 19-Jan-2021
Document Number: 94986
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-6ESU06-M3
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Vishay Semiconductors
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 8 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
6
E
S
U
06
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (6 = 6 A)
3
-
Circuit configuration:
E = single diode
4
-
S = SMPC package
5
-
Process type,
U = ultra fast recovery
6
-
Voltage code (06 = 600 V)
7
-
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER REEL
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-6ESU06-M3/86A
1500
1500
7" diameter plastic tape and reel
VS-6ESU06-M3/87A
6500
6500
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95570
Part marking information
www.vishay.com/doc?95565
Packaging information
www.vishay.com/doc?88869
SPICE model
www.vishay.com/doc?96703
Revision: 19-Jan-2021
Document Number: 94986
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
SMPC (TO-277A)
DIMENSIONS in inches (millimeters)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC® TO-277A
Revision: 16-Feb-2022
Document Number: 95570
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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