VS-6EVL06HM3
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Vishay Semiconductors
Ultralow VF Ultrafast Rectifier, 6 A FRED Pt®
FEATURES
eSMP® Series
• Ultrafast recovery time, extremely low VF and
soft recovery
Heatsink
k
• For PFC CCM operation
k
• Low forward voltage drop, low power losses
• Low leakage current
1
• Meets MSL level 1, per
LF maximum peak of 260 °C
2
1
Pin 1
2
Pin 2
J-STD-020,
• AEC-Q101 qualified
- Automotive ordering code: base P/NHM3, meets
JESD 201 class 2 whisker test
SlimDPAK (TO-252AE)
LINKS TO ADDITIONAL RESOURCES
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3D 3D
3D Models
TYPICAL APPLICATIONS
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters, or as freewheeling
diodes. Their extremely optimized stored charge and low
recovery current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
IF(AV)
6A
VR
600 V
VF at IF
0.98 V
trr (typ.)
34 ns
TJ max.
175 °C
Package
SlimDPAK (TO-252AE)
Circuit configuration
Single
MECHANICAL DATA
Case: SlimDPAK (TO-252AE)
Molding compound meets UL 94 V-0 flammability rating
Terminals:
J-STD-002
matte
tin
plated
leads,
solderable
per
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
600
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 158 °C
6
Non-repetitive peak surge current
IFSM
TJ = 25 °C, 10 ms sine pulse wave
80
Operating junction and storage temperatures
TJ, TStg
A
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
Reverse leakage current
IR
Junction capacitance
CT
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 6 A
-
1.15
1.35
IR = 100 μA
IF = 6 A, TJ = 150 °C
-
0.98
1.15
VR = VR rated
-
-
5
TJ = 150 °C, VR = VR rated
-
-
125
VR = 600 V
-
10
-
UNITS
V
μA
pF
Revision: 13-Jan-2021
Document Number: 96141
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-6EVL06HM3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
MIN.
TYP.
MAX.
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
TEST CONDITIONS
-
45
-
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
-
34
-
IF = 0.5 A, IR = 1 A, IRR = 0.25 A
-
-
50
TJ = 25 °C
-
65
-
-
90
-
-
9.5
-
-
13.5
-
TJ = 125 °C
Peak recovery current
IRRM
Reverse recovery charge
IF = 6 A
dIF/dt = 500 A/μs
VR = 400 V
TJ = 25 °C
TJ = 125 °C
Qrr
UNITS
ns
A
TJ = 25 °C
-
320
-
TJ = 125 °C
-
620
-
MIN.
TYP.
MAX.
UNITS
-55
-
175
°C
-
-
2.5
°C/W
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature
range
TEST CONDITIONS
TJ, TStg
Thermal resistance, junction to mount
RthJM
Case style SlimDPAK (TO-252AE)
100
10
TJ = 175 °C
TJ = 150 °C
1
TJ = 25 °C
TJ = -40 °C
0.1
6EVL06
1000
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
Marking device
100
175 °C
10
150 °C
1
0.1
25 °C
0.01
0.001
0
0.5
1.0
1.5
2.0
0
100
200
300
400
500
600
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
100
10
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 13-Jan-2021
Document Number: 96141
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-6EVL06HM3
www.vishay.com
Vishay Semiconductors
ZthJC - Thermal Impedance (°C/W)
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
PDM
t2
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
DC
0.01
0.0001
0.001
t1
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
170
175
150
125 °C
170
130
165
trr (ns)
Allowable Case Temperature (°C)
180
160
DC
155
Square wave (D = 0.50)
80 % rated VR applied
150
25 °C
90
70
145
See note (1)
140
50
0
2
4
6
8
100
10
200
300
400
500
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
14
700
12
600
10
125 °C
RMS limit
Qrr (nC)
Average Power Loss (W)
110
8
6
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
4
2
500
400
25 °C
300
200
0
0
1
2
3
4
5
6
7
8
9
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
100
200
300
400
500
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 13-Jan-2021
Document Number: 96141
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-6EVL06HM3
www.vishay.com
Vishay Semiconductors
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
trr x IRRM
2
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
6
E
V
L
06
H
M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (6 = 6 A)
3
-
Circuit configuration:
E = single die
4
-
V = SlimDPAK
5
-
Process type:
L = ultralow VF ultrafast rectifier
6
-
Voltage code (06 = 600 V)
7
-
H = AEC-Q101 qualified
8
-
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
PACKAGING DESCRIPTION
VS-6EVL06HM3/I
0.20
I
4500
13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96081
Part marking information
www.vishay.com/doc?96085
Packaging information
www.vishay.com/doc?88869
Revision: 13-Jan-2021
Document Number: 96141
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
SlimDPAK
DIMENSIONS in inches (millimeters)
SlimDPAK
0.055 (1.40)
0.047 (1.20)
0.249 (6.32)
0.239 (6.08)
0.016 (0.41)
0.010 (0.25)
0.028 (0.70)
0.012 (0.30)
0.265 (6.72)
0.255 (6.48)
0.370 (9.40)
0.339 (8.60)
0.008
0.000
0.055
0.039
0.090
NOM.
(2.29)
(0.20)
(0.00)
(1.40)
(1.00)
0.180
NOM.
(4.57)
Mounting Pad Layout
0.240
MIN.
(6.10)
0.224 (5.70)
0.209 (5.30)
0.205
NOM.
(5.20)
0.235
MIN.
(5.97)
0.386
REF.
(9.80)
0.075
MIN.
(1.90)
0.035 (0.90)
0.028 (0.70)
0.090
NOM.
(2.29)
0.055
MIN.
(1.40)
Revision: 14-Mar-17
Document Number: 96081
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 09-Jul-2021
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Document Number: 91000
