VS-6EWH06FNHM3
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Vishay Semiconductors
Ultralow VF Ultrafast Rectifier, 6 A FRED Pt®
FEATURES
• Hyperfast recovery time, reduced Qrr and soft
recovery
2, 4
• 175 °C maximum operating junction temperature
• For PFC CRM/CCM operation
1
N/C
• Low forward voltage drop
3
Anode
• Low leakage current
DPAK (TO-252AA)
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
PRIMARY CHARACTERISTICS
IF(AV)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
6A
VR
600 V
VF at IF
1.26 V
trr (typ.)
18 ns
DESCRIPTION / APPLICATIONS
TJ max.
175 °C
Package
DPAK (TO-252AA)
Circuit configuration
Single
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC/DC section of SMPS inverters or as freewheeling
diodes. Their extremely optimized stored charge and low
recovery current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
600
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 144 °C
Non-repetitive peak surge current
IFSM
TJ = 25 °C
70
Peak repetitive forward current
IFM
TC = 144 °C, f = 20 kHz, d = 50 %
12
Operating junction and storage temperatures
TJ, TStg
6
A
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
IR = 100 μA
IF = 6 A
MIN.
TYP.
MAX.
600
-
-
-
1.60
2.1
IF = 6 A, TJ = 150 °C
-
1.26
1.7
VR = VR rated
-
-
50
TJ = 150 °C, VR = VR rated
-
-
250
UNITS
V
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
3.5
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
μA
Revision: 19-Feb-2021
Document Number: 94740
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
-
18
25
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
Reverse recovery time
trr
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
-
22
-
TJ = 25 °C
-
27
-
TJ = 125 °C
Peak recovery current
IRRM
Reverse recovery charge
Qrr
-
37
-
-
4.1
-
-
5.3
-
TJ = 25 °C
-
57
-
TJ = 125 °C
-
103
-
IF = 6 A
dIF/dt = 200 A/μs
VR = 390 V
TJ = 25 °C
TJ = 125 °C
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature range
MIN.
TYP.
MAX.
TJ, TStg
-65
-
175
°C
RthJC
-
-
3
°C/W
Thermal resistance, junction to case per leg
TEST CONDITIONS
Approximate weight
Case style DPAK (TO-252AA)
100
0.3
g
0.01
oz.
6EWH06FNH
100
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
Marking device
UNITS
TJ = 175 °C
10
1
TJ = 125 °C
TJ = 175 °C
10
TJ = 150 °C
1
TJ = 125 °C
TJ = 100 °C
0.1
TJ = 75 °C
0.01
TJ = 50 °C
TJ = 25 °C
TJ = 25 °C
0.1
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
500
600
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
100
10
1
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 19-Feb-2021
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VS-6EWH06FNHM3
ZthJC - Thermal Impedance (°C/W)
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10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
0.1
0.00001
0.0001
0.001
0.01
1
0.1
t1 - Rectangular Pulse Duration (s)
40
180
170
35
DC
6 A, TJ = 125 °C
160
35
150
trr (ns)
Allowable Case Temperature (°C)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
140
130
25
20
Square wave (D = 0.50)
80 % rated VR applied
6 A, TJ = 25 °C
15
120
See note (1)
110
0
2
4
6
8
10
100
10
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
14
200
RMS limit
180
12
160
10
140
Qrr (nC)
Average Power Loss (W)
1000
8
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
6
4
2
3
6
100
80
60
40
6 A, TJ = 25 °C
20
0
0
6 A, TJ = 125 °C
120
9
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
0
100
1000
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 19-Feb-2021
Document Number: 94740
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VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 19-Feb-2021
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ORDERING INFORMATION TABLE
Device code
VS-
6
E
W
H
06
FN
TRL
H
M3
1
2
3
4
5
6
7
8
9
10
1
-
Vishay Semiconductors product
2
-
Current rating (6 = 6 A)
3
-
Circuit configuration:
E = single diode
4
-
Package identifier:
5
-
H = hyperfast recovery
6
-
Voltage rating (06 = 600 V)
7
-
FN = TO-252AA
8
-
None = tube
W = D-PAK
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
-
H = AEC-Q101 qualified
10
-
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
75
3000
Antistatic plastic tube
VS-6EWH06FNTRHM3
2000
2000
13" diameter reel
VS-6EWH06FNTRRHM3
3000
3000
13" diameter reel
VS-6EWH06FNTRLHM3
3000
3000
13" diameter reel
VS-6EWH06FNHM3
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95519
Part marking information
www.vishay.com/doc?95518
Packaging information
www.vishay.com/doc?95033
Revision: 19-Feb-2021
Document Number: 94740
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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DPAK (TO-252AA)
DIMENSIONS in millimeters and inches
Pad layout
E
A
0.265 (6.74) min.
b3
E1
c2
L3
4
4
Seating
plane
D
1
2
L5
0.245 (6.23) min.
H
L4
3
D1
3
1
2
0.488 (12.40)
0.409 (10.40)
Detail “C”
b2
0.089 (2.28) min.
c
b
e
L1
e1
Lead tip
0.06 (1.524) min.
Detail “C”
Gauge plane
L2
0.093 (2.38)
0.085 (2.18)
A1
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
MAX.
A
2.18
2.39
0.086
0.094
e
A1
-
0.13
-
0.005
H
9.40
10.41
0.370
0.410
b
0.64
0.89
0.025
0.035
L
1.40
1.78
0.055
0.070
b2
0.76
1.14
0.030
0.045
L1
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
3
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
5
D1
5.21
-
0.205
-
3
E
6.35
6.73
0.250
0.265
5
E1
4.32
-
0.170
-
3
2.74 BSC
L2
L3
c2
2.29 BSC
INCHES
MIN.
0.51 BSC
0.89
1.27
NOTES
0.090 BSC
0.108 REF.
0.020 BSC
0.035
0.050
L4
-
1.02
-
0.040
L5
1.14
1.52
0.045
0.060
3
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(5) Outline conforms to JEDEC® outline TO-252AA
Revision: 06-Jun-17
Document Number: 95519
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