VS-6FR100

VS-6F(R) Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 6 A FEATURES • High surge current capability • Stud cathode and stud anode version • Wide current range • Types up to 1200 V VRRM • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-4 (DO-203AA) TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS • Converters IF(AV) 6A Package DO-4 (DO-203AA) Circuit configuration Single • Power supplies • Machine tool controls • Battery charges MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) TC IF(RMS) IFSM I2t VRRM VALUES UNITS 6 A 160 °C 9.5 A 50 Hz 159 60 Hz 167 A 50 Hz 134 60 Hz 141 Range 100 to 1200 V -65 to +175 °C IRRM MAXIMUM AT TJ = 175 °C mA TJ A2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-6F(R) VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 10 100 150 20 200 275 40 400 500 60 600 725 80 800 950 100 1000 1200 120 1200 1400 12 Revision: 11-Jan-18 Document Number: 93519 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6F(R) Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature Maximum RMS forward current IF(AV) TEST CONDITIONS 180° conduction, half sine wave IF(RMS) t = 10 ms Maximum peak, one cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t I2t for fusing t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VALUES UNITS 6 A 160 °C 9.5 A No voltage reapplied 159 100 % VRRM reapplied 134 No voltage reapplied 167 Sinusoidal half wave, initial TJ = TJ maximum 141 127 116 90 100 % VRRM reapplied A A2s 82 t = 0.1 ms to 10 ms, no voltage reapplied 1270 Low level value of threshold voltage VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.63 High level value of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ = TJ maximum 0.86 A2s V Low level value of forward slope resistance rf1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 15.7 High level value of forward slope resistance rf2 (I >  x IF(AV)), TJ = TJ maximum 5.6 Ipk = 19 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.10 V VALUES UNITS Maximum forward voltage drop VFM m THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ -65 to +175 Maximum storage temperature range TStg -65 to +200 Maximum thermal resistance, junction to case RthJC DC operation 2.5 Maximum thermal resistance, case to heat sink RthCS Mounting surface, smooth, flat and greased 0.5 Lubricated threads (Not lubricated threads) 1.2 (1.5) °C K/W Mounting torque, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet N·m (lbf · in) 7 g 0.25 oz. DO-4 (DO-203AA) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.34 0.29 120° 0.44 0.48 90° 0.57 0.63 60° 0.85 0.88 30° 1.37 1.39 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93519 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6F(R) Series 175 Vishay Semiconductors Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com 6F(R) Series RthJC (DC) = 2.5 K/W 170 Conduction Angle 165 160 90° 60° 120° 180° 30° 155 0 1 2 3 4 5 6 7 175 6F(R) Series RthJC (DC) = 2.5 K/W 170 Conduction Period 165 160 60° 90° 120° 30° 180° DC 155 0 2 4 6 8 10 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Maximum Average Forward Power Loss (W) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 6 R 180° 120° 90° 60° 30° 5 4 30 K/W 15 20 K/ W 40 K /W K/ W -D elt a R 50 K /W RMS Limit 3 th SA = 2 Conduction Angle 1 6F(R) Series TJ = 175°C 0 0 1 2 3 4 5 Average Forward Current (A) 0 6 25 50 75 100 Maximum Allowable Ambient Temperature (°C) Maximum Average Forward Power Loss (W) Fig. 3 - Forward Power Loss Characteristics 8 R DC 180° 120° 90° 60° 30° 7 6 5 20 K/ W th SA = 30 K/W 10 15 K/ W -D el ta K/ W R 40 K /W 4 3 RMS Limit 50 K /W Conduction Period 2 6F(R) Series TJ = 175°C 1 0 0 2 4 6 8 Average Forward Current (A) 10 0 25 50 75 100 Maximum Allowable Ambient Temperature (°C) Fig. 4 - Forward Power Loss Characteristics Revision: 11-Jan-18 Document Number: 93519 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6F(R) Series 150 Vishay Semiconductors 1000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ= 175°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 140 130 120 Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) www.vishay.com 110 100 90 80 70 60 6F(R) Series 50 6F(R) Series 100 TJ = 175°C 1 40 1 10 0 100 0.5 1 1.5 2 2.5 Number Of Equal Amplitude Half Cycle Current Pulses (N) Instantaneous Forward Voltage (V) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 7 - Forward Voltage Drop Characteristics 160 150 140 130 120 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 175°C No Voltage Reapplied Rated VRRM Reapplied 110 100 90 80 70 60 50 40 30 0.01 6F(R) Series 0.1 10 Transient Thermal Impedance ZthJC (K/W) Peak Half Sine Wave Forward Current (A) TJ = 25°C 10 Steady State Value RthJC = 2.5 K/W (DC Operation) 1 6F(R) Series 0.1 0.001 1 0.01 0.1 1 10 Pulse Train Duration (s) Square Wave Pulse Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 6 F R 120 M 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating: code = IF(AV) 3 - F = standard device 4 - 5 - Voltage code x 10 = VRRM (see Voltage Ratings table) 6 - None = stud base DO-4 (DO-203AA) 10-32UNF-2A M = stud base DO-4 (DO-203AA) M5 x 0.8 None = stud normal polarity (cathode to stud) R = stud reverse polarity (anode to stud) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95311 Revision: 11-Jan-18 Document Number: 93519 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors DO-203AA (DO-4) DIMENSIONS in millimeters (inches) + 0.3 0 + 0.01 (0.08 0) 0.8 ± 0.1 (0.03 ± 0.004) 3.30 (0.13) 4.00 (0.16) 2 5.50 (0.22) MIN. R 0.40 R (0.02) Ø 1.80 ± 0.20 (Ø 0.07 ± 0.01) 20.30 (0.80) MAX. Ø 6.8 (0.27) 10.20 (0.40) MAX. 3.50 (0.14) 11.50 (0.45) 10.70 (0.42) 10/32" UNF-2A For metric devices: M5 x 0.8 11 (0.43) Document Number: 95311 Revision: 30-Jun-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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