VS-6TQ040S-M3

VS-6TQ035S-M3, VS-6TQ040S-M3, VS-6TQ045S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 6 A FEATURES Base cathode 2 • 175 °C TJ operation • High frequency operation • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 2 1 1 3 D2PAK N/C (TO-263AB) 3 Anode • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C PRIMARY CHARACTERISTICS IF(AV) 6A • Designed and qualified according to JEDEC®-JESD 47 VR 35 V, 40 V, 45 V VF at IF 0.53 V IRM 7 mA at 125 °C TJ max. 175 °C EAS Package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-6TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. 8 mJ D2PAK Circuit configuration (TO-263AB) Single MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM Range IFSM tp = 5 μs sine VF 6 Apk, TJ = 125 °C TJ Range VALUES UNITS 6 A 35 to 45 V 690 A 0.53 V -55 to +175 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-6TQ035S-M3 VS-6TQ040S-M3 VS-6TQ045S-M3 UNITS 35 40 45 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 50 % duty cycle at TC = 164 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied VALUES UNITS 6 690 A 140 8 mJ 1.20 A Revision: 21-Dec-2021 Document Number: 94945 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6TQ035S-M3, VS-6TQ040S-M3, VS-6TQ045S-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 6A Maximum forward voltage drop See fig. 1 VFM (1) 6A IRM (1) Threshold voltage VF(TO) 0.73 0.64 0.8 VR = Rated VR TJ = 125 °C V 0.53 TJ = 125 °C TJ = 25 °C UNITS 0.60 TJ = 25 °C 12 A 12 A Maximum reverse leakage current See fig. 2 VALUES mA 7 TJ = TJ maximum 0.35 V 18.23 mΩ Forward slope resistance rt Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 400 pF Typical series inductance LS Measured lead to lead 5 mm from package body 8.0 nH 10 000 V/μs VALUES UNITS -55 to 175 °C Maximum voltage rate of change dV/dt Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 2.2 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth, and greased 0.50 °C/W 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque 6TQ035S Case style D2PAK (TO-263AB) Marking device 6TQ040S 6TQ045S 100 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) TJ = 175 °C 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 1 0.2 10 TJ = 150 °C 1.0 TJ = 125 °C 0.1 TJ = 100 °C 0.01 TJ = 75 °C TJ = 50 °C 0.001 TJ = 25 °C 0.0001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 21-Dec-2021 Document Number: 94945 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6TQ035S-M3, VS-6TQ040S-M3, VS-6TQ045S-M3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 10 20 40 30 50 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1.0 PDM D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 t1 t2 0.01 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC Single pulse (thermal resistance) 0.0001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 t1 - Rectangular Pulse Duration (s) 5 180 175 170 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics DC 165 Square wave (D = 0.50) 80 % rated VR applied 160 155 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 4 3 RMS limit 2 DC 1 See note (1) 150 0 0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 21-Dec-2021 Document Number: 94945 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6TQ035S-M3, VS-6TQ040S-M3, VS-6TQ045S-M3 www.vishay.com IFSM - Non-Repetitive Surge Current (A) Vishay Semiconductors 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 21-Dec-2021 Document Number: 94945 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6TQ035S-M3, VS-6TQ040S-M3, VS-6TQ045S-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 6 T Q 045 S 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (6 A) 3 - Package: T = TO-220 4 - Schottky “Q” series 5 - Voltage ratings 6 - S = D2PAK (TO-263AB) 7 - TRL -M3 7 8 035 = 35 V 040 = 40 V 045 = 45 V None = tube TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 8 - -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION VS-6TQ035S-M3 50 Antistatic plastic tubes VS-6TQ035STRL-M3 800 13" diameter plastic tape and reel VS-6TQ035STRR-M3 800 13" diameter plastic tape and reel VS-6TQ040S-M3 50 Antistatic plastic tubes VS-6TQ040STRL-M3 800 13" diameter plastic tape and reel VS-6TQ040STRR-M3 800 13" diameter plastic tape and reel VS-6TQ045S-M3 50 Antistatic plastic tubes VS-6TQ045STRL-M3 800 13" diameter plastic tape and reel VS-6TQ045STRR-M3 800 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96164 Part marking information www.vishay.com/doc?95444 Packaging information www.vishay.com/doc?96424 Revision: 21-Dec-2021 Document Number: 94945 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 C 2xb 2.64 (0.103) 2.41 (0.096) (3) E1 c View A - A ± 0.004 M B 0.010 M A M B 2x e Plating Base Metal (4) b1, b3 H Gauge plane L Seating plane L3 A1 Lead tip (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. c1 (4) (c) B 0° to 8° MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 0.110 L 1.78 2.79 0.070 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inches (7) Outline conforms to JEDEC® outline TO-263AB Revision: 13-Jul-17 Document Number: 96164 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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