VS-70TPS12PBF

VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 70 A FEATURES 2 (A) • High surge capability • High voltage input rectification • Designed and qualified JEDEC®-JESD 47 1 2 3 Super TO-247 1 (K) (G) 3 according to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PRIMARY CHARACTERISTICS IT(AV) 70 A VDRM/VRRM 1200 V, 1600 V VTM 1.25 V IGT 100 mA TJ -40 °C to +125 °C Package Super TO-247 Circuit configuration Single SCR • AC switches • High voltage input rectification (soft start) • High current crow-bar • Other phase-control circuits • Designed to be used with Vishay input diodes, switches, and output rectifiers which are available in identical package outlines DESCRIPTION The VS-70TPS.. PbF high voltage series of silicon controlled rectifiers are specifically designed for high and medium power switching, and phase control applications. MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES IT(AV) Sinusoidal waveform 70 IRMS Lead current limitation 75 VRRM/VDRM Range ITSM VT 100 A, TJ = 25 °C UNITS A 1200 to 1600 V 1100 A 1.4 V dV/dt 500 V/μs dI/dt 150 A/μs -40 to +125 °C IRRM/IDRM AT 125 °C mA TJ VOLTAGE RATINGS PART NUMBER VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-70TPS12PbF 1200 1300 VS-70TPS16PbF 1600 1700 15 Revision: 05-Jun-2020 Document Number: 94391 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum continuous RMS on-state  current as AC switch Maximum peak, one-cycle  non-repetitive surge current Maximum I2t for fusing Maximum I2t for fusing SYMBOL IT(AV) IT(RMS) ITSM I2t I2t Low level value of threshold voltage VT(TO)1 High level value of threshold voltage VT(TO)2 Low level value of on-state slope resistance rt1 High level value of on-state slope resistance rt2 TEST CONDITIONS VALUES UNITS TC = 82 °C, 180° conduction half sine wave 70 Lead current limitation 75 10 ms sine pulse, rated VRRM applied 930 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied A 1100 Initial TJ = TJ maximum 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied 4325 6115 61 150 0.916 1.21 TJ = 125 °C 4.138 3.43 A2s A2s V m Maximum peak on-state voltage VTM 100 A, TJ = 25 °C 1.4 V Maximum rate of rise of turned-on current dI/dt TJ = 25 °C 150 A/μs Maximum holding current IH Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C 200 Maximum latching current IL Anode supply = 6 V, resistive load, TJ = 25 °C 400 TJ = 25 °C 1.0 Maximum reverse and direct leakage current IRRM/IDRM Maximum rate of rise of off-state voltage dV/dt TJ = 125 °C TJ = 125 °C VR = rated VRRM/VDRM  (TJ = TJ max., linear to 80 %  VDRM = Rg- k = open) mA 15 500 V/μs TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) TEST CONDITIONS 10 T = 30 μs 2.5 IGM 2.5 -VGM 10 TJ = - 40 °C Maximum required DC gate voltage to trigger Maximum required DC gate current to trigger VALUES UNITS VGT IGT TJ = 25 °C 1.8 Anode supply = 6 V resistive load TJ = 125 °C 1.1 TJ = - 40 °C 150 TJ = 25 °C Anode supply = 6 V resistive load TJ = 125 °C Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD 1.5 TJ = 125 °C, VDRM = rated value 100 W A V mA 80 0.25 V 6 mA Revision: 05-Jun-2020 Document Number: 94391 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum junction temperature range TJ -40 to +125 Maximum storage temperature range TStg -40 to +150 Maximum thermal resistance,  junction to case RthJC Maximum thermal resistance,  junction to ambient RthJA Typical thermal resistance,  case to heatsink RthCS DC operation °C 0.27 °C/W 40 Mounting surface, smooth and greased 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque UNITS Marking device 70TPS12 Case style Super TO-247 70TPS16 RthJ-hs CONDUCTION PER JUNCTION SINE HALF WAVE CONDUCTION DEVICE VS-70TPS..PbF RECTANGULAR WAVE CONDUCTION 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.078 0.092 0.117 0.172 0.302 0.053 0.092 0.125 0.180 0.306 UNITS °C/W 130 RthJC (DC) = 0.27 ˚C/W 120 110 Conduction Angle 30˚ 100 60˚ 90 90˚ 120˚ 180˚ 80 70 0 10 20 30 40 50 60 70 80 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 130 RthJC (DC) = 0.27 ˚C/W 120 DC 110 Conduction Period 100 180˚ 90 80 30˚ 70 60˚ 90˚ 120˚ 60 0 10 20 30 40 50 60 70 80 90 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Revision: 05-Jun-2020 Document Number: 94391 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Vishay Semiconductors 1000 140 180˚ 120˚ 90˚ 60˚ 30˚ 120 100 80 RMS Limit 60 40 Conduction Angle 800 700 600 500 20 VS-70TPS.. Series Tj = 125˚C 400 0 0 10 20 30 40 50 60 70 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Average On-state Current (A) Fig. 3 - On-State Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 150 1200 180˚ 120˚ 90˚ 60˚ 30˚ 120 90 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied 1100 Peak Half Sine Wave Forward Current (A) Maximum Average On-state Power Loss (W) At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 900 Peak Half Sine Wave Forward Current (A) Maximum Average On-state Power Loss (W) www.vishay.com DC RMS Limit 60 Conduction Period 30 1000 900 800 700 600 500 400 Tj = 125˚C 0 0 15 30 45 60 300 0.01 75 0.1 1 10 Average On-state Current (A) Pulse Train Duration (s) Fig. 4 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 Tj = 125˚C 100 10 Tj = 25˚C 1 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Revision: 05-Jun-2020 Document Number: 94391 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series www.vishay.com 10 Rectangular gate pulse a) Recommended load line for rated diF/dt: 20 V, 30 Ω tr = 0.5 μs, tp > = 6 μs (1) PGM = 100 W, tp = 500 μs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms b) Recommended load line for < = 30 % rated diF/dt: 20 V, 65 Ω tr = 1 μs, tp > = 6 μs (a) (b) VGD TJ = - 40 °C TJ = 25 °C 1 TJ = 125 °C Instantaneous Gate Voltage (V) 100 Vishay Semiconductors 0.01 (2) (1) Frequency Limited by PG(AV) IGD 0.1 0.001 (3) (4) 0.1 1 10 100 1000 Instantaneous Gate Current (A) Transient Thermal Impedance ZthJC (°C/W) Fig. 8 - Gate Characteristics 1 Steady State Value (DC Operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 70TPS.. Series 0.01 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 9 - Thermal Impedance ZthJC Characteristics Revision: 05-Jun-2020 Document Number: 94391 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 70 T P S 16 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (70 = 70 A) 3 - Circuit configuration: T = thyristor 4 - Package: 5 - 6 - Voltage code x 100 = VRRM 7 - PbF = lead (Pb)-free P = super TO-247 Type of silicon: S = standard recovery rectifier 12 = 1200 V 16 = 1600 V ORDERING INFORMATION (example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-70TPS12PbF 25 500 Antistatic plastic tube VS-70TPS16PbF 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95073 Part marking information www.vishay.com/doc?95070 SPICE model VS-70TPS12 www.vishay.com/doc?96760 SPICE model VS-70TPS16 www.vishay.com/doc?96761 Revision: 05-Jun-2020 Document Number: 94391 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Super TO-247 DIMENSIONS in millimeters (inches) 16.10 (0.632) 15.10 (0.595) 2xR A 0.13 (0.005) 5.50 (0.216) 4.50 (0.178) 2.15 (0.084) 1.45 (0.058) 4 20.80 (0.818) 19.80 (0.780) C 1 2 3 4.25 (0.167) 3.85 (0.152) B 14.80 (0.582) 13.80 (0.544) 3x 5.45 (0.215) 2x 1.30 (0.051) 1.60 (0.063) 3x 1.20 (0.047) 0.90 (0.035) 2.35 (0.092) 1.65 (0.065) 0.25 (0.010) M B A M 0.25 (0.010) M B A M 13.90 (0.547) 13.30 (0.524) Ø 1.60 (0.063) MAX. 1.30 (0.051) 0.70 (0.028) 16.10 (0.633) 15.50 (0.611) 4 Section E - E Lead assignments E E MOSFET IGBT 1 - Gate 2 - Drain 3 - Source 4 - Drain 1 - Gate 2 - Collector 3 - Emitter 4 - Collector Notes (1) Dimension and tolerancing per ASME Y14.5M-1994 (2) Controlling dimension: millimeter (3) Outline conforms to JEDEC® outline TO-274AA Revision: 30-Mar-15 Document Number: 95073 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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