VS-80APF02PBF

VS-80APF0..-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 80 A FEATURES Base cathode • Glass passivated pellet chip junction 2 • 150 °C max. operating junction temperature • Low forward voltage drop and short reverse recovery time 1 2 3 TO-247AC 3L 1 Anode 3 Anode PRIMARY CHARACTERISTICS • Designed and qualified JEDEC®-JESD 47 according Available to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS IF(AV) 80 A VR 200 V, 400 V, 600 V VF at IF 1.25 V IFSM 1000 A trr 70 ns These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. DESCRIPTION TJ max. 150 °C Package TO-247AC 3L Circuit configuration Single Snap factor 0.5 The VS-90APF006L-M3 soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM IF(AV) Sinusoidal waveform IFSM VALUES UNITS 200 to 600 V 80 1000 trr 1 A, - 100 A/μs VF 40 A, TJ = 25 °C TJ Range 70 A ns 1.1 V -40 to +150 °C IRRM AT 150 °C mA VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-80APF02-M3 200 300 VS-80APF04-M3 400 500 VS-80APF06-M3 600 700 17 Revision: 27-Feb-2019 Document Number: 93722 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80APF0..-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current Maximum peak one cycle non-repetitive surge current IF(AV) IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t TEST CONDITIONS VALUES TC = 95 °C, 180° conduction half sine wave 80 10 ms sine pulse, rated VRRM applied 850 10 ms sine pulse, no voltage reapplied 1000 10 ms sine pulse, rated VRRM applied 3610 10 ms sine pulse, no voltage reapplied 5100 t = 0.1 ms to 10 ms, no voltage reapplied UNITS A A2s 51 000 A2s VALUES UNITS ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 80 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C VR = Rated VRRM TJ = 150 °C 1.25 V 3.5 m 0.85 V 0.1 mA 17 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor TEST CONDITIONS IF at 40 Apk 25 A/μs 25 °C S VALUES UNITS 190 ns 3.4 A 0.5 μC IFM trr di dt 0.5 t Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance,  case to heatsink RthCS DC operation UNITS -40 to +150 °C 0.35 40 Mounting surface, smooth and greased Approximate weight Mounting torque VALUES °C/W 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (Ibf · in) 80APF02 Marking device Case style TO-247AC 3L 80APF04 80APF06 Revision: 27-Feb-2019 Document Number: 93722 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80APF0..-M3 Series www.vishay.com Vishay Semiconductors 180 RthJC (DC) = 0.35 K/W 140 130 Ø Conduction angle 120 110 30° 100 120° 60° 90 90° Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 180° DC 180° 120° 90° 60° 30° 160 140 120 RMS limit 100 80 60 Ø 40 Conduction period 20 TJ = 150 °C 0 80 0 10 30 20 40 50 60 70 90 80 20 0 Average Forward Current (A) 80 100 120 140 Fig. 4 - Forward Power Loss Characteristics 1000 150 140 130 Ø Conduction period 120 110 30° 100 60° 90° 90 DC 180° 40 60 600 500 400 80 100 120 1 140 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 140 1000 180° 120° 90° 60° 30° 100 900 Peak Half Sine Wave Forward Current (A) 120 RMS limit 80 60 Ø 40 Conduction angle 20 TJ = 150 °C 10 20 30 40 50 60 70 80 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 800 700 600 500 400 300 0 0 700 200 80 20 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 800 300 120° 0 At any rated load condition and with rated VRRM applied following surge. 900 RthJC (DC) = 0.35 K/W Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 60 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Maximum Average Forward Power Loss (W) 40 90 200 0.01 0.1 1 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 27-Feb-2019 Document Number: 93722 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80APF0..-M3 Series Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 1000 100 TJ = 25 °C TJ = 150 °C 10 80EPF.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.5 3.0 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 0.22 4.0 IFM = 125 A 3.5 0.18 IFM = 40 A IFM = 80 A 0.16 IFM = 20 A IFM = 10 A 0.14 0.12 0.10 0.08 0.06 Qrr - Typical Reverse Recovery Charge (µC) trr - Typical Reverse Recovery Time (µs) 0.20 0.04 IFM = 40 A 2.5 2.0 IFM = 20 A 1.5 IFM = 10 A 1.0 IFM = 1 A 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 0.6 14 0.5 12 Qrr - Typical Reverse Recovery Charge (µC) trr - Typical Reverse Recovery Time (µs) IFM = 80 A 3.0 0.5 IFM = 1 A TJ = 25 °C IFM = 125 A TJ = 25 °C IFM = 80 A 0.4 IFM = 40 A 0.3 IFM = 20 A IFM = 10 A 0.2 IFM = 1 A 0.1 IFM = 80 A TJ = 150 °C 10 8 IFM = 40 A 6 IFM = 20 A IFM = 10 A 4 2 TJ = 150 °C IFM = 1 A 0 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C Revision: 27-Feb-2019 Document Number: 93722 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80APF0..-M3 Series www.vishay.com Vishay Semiconductors 45 22 IFM = 125 A TJ = 25 °C 18 40 IFM = 80 A Irr - Typical Reverse Recovery Current (A) Irr - Typical Reverse Recovery Current (A) 20 IFM = 40 A 16 14 IFM = 20 A 12 IFM = 10 A 10 8 6 IFM = 1 A 4 TJ = 150 °C 35 IFM = 80 A IFM = 40 A IFM = 20 A IFM = 10 A IFM = 1 A 30 25 20 15 10 5 2 0 0 40 0 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Fig. 13 - Recovery Current Characteristics, TJ = 150 °C ZthJC - Transient Thermal Impedance (K/W) dI/dt - Rate of Fall of Forward Current (A/µs) 1 Steady state value (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 80EPF.. Series 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 27-Feb-2019 Document Number: 93722 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80APF0..-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 80 A P F 06 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (80 = 80 A) 3 - Circuit configuration: A = single diode, 3 pins 4 - Package: P = TO-247AC 3L 5 - Type of silicon: F = fast recovery 6 - Voltage code x 100 = VRRM 7 - Environmental digit: 02 = 200 V 04 = 400 V 06 = 600 V -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-80APF02-M3 25 500 Antistatic plastic tubes VS-80APF04-M3 25 500 Antistatic plastic tubes VS-80APF06-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96138 Part marking information www.vishay.com/doc?95007 Revision: 27-Feb-2019 Document Number: 93722 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AC 3L DIMENSIONS in millimeters and inches A A E (3) B A2 S R/2 (2) (Datum B) Ø P (6) Ø P1 Ø K M DBM A Q D2 2 x R (2) D1 (4) D Thermal pad 2 1 4 D 3 L1 (5) C L A See view B 2 x b2 3xb 0.10 M C A M C 2x e A1 b4 E1 (4) 0.01 M D B M (b1, b3, b5) Plating View A - A Base metal D DE (c) c1 (b, b2, b4) C A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.17 1.37 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - C (4) View B Section C - C, D - D, E - E SYMBOL E INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.046 0.054 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.35 15.29 15.87 13.46 5.46 BSC 0.254 14.20 16.10 3.71 4.29 3.56 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.053 0.602 0.625 0.53 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.14 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension Q Revision: 20-Jun-17 Document Number: 96138 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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