VS-80APF0..-M3 Series
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Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 80 A
FEATURES
Base
cathode
• Glass passivated pellet chip junction
2
• 150 °C max. operating junction temperature
• Low forward voltage drop and short reverse
recovery time
1
2
3
TO-247AC 3L
1
Anode
3
Anode
PRIMARY CHARACTERISTICS
• Designed and qualified
JEDEC®-JESD 47
according
Available
to
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
IF(AV)
80 A
VR
200 V, 400 V, 600 V
VF at IF
1.25 V
IFSM
1000 A
trr
70 ns
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
TJ max.
150 °C
Package
TO-247AC 3L
Circuit configuration
Single
Snap factor
0.5
The VS-90APF006L-M3 soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
IF(AV)
Sinusoidal waveform
IFSM
VALUES
UNITS
200 to 600
V
80
1000
trr
1 A, - 100 A/μs
VF
40 A, TJ = 25 °C
TJ
Range
70
A
ns
1.1
V
-40 to +150
°C
IRRM
AT 150 °C
mA
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
VS-80APF02-M3
200
300
VS-80APF04-M3
400
500
VS-80APF06-M3
600
700
17
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VS-80APF0..-M3 Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
IF(AV)
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
TEST CONDITIONS
VALUES
TC = 95 °C, 180° conduction half sine wave
80
10 ms sine pulse, rated VRRM applied
850
10 ms sine pulse, no voltage reapplied
1000
10 ms sine pulse, rated VRRM applied
3610
10 ms sine pulse, no voltage reapplied
5100
t = 0.1 ms to 10 ms, no voltage reapplied
UNITS
A
A2s
51 000
A2s
VALUES
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
VFM
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
80 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
VR = Rated VRRM
TJ = 150 °C
1.25
V
3.5
m
0.85
V
0.1
mA
17
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
TEST CONDITIONS
IF at 40 Apk
25 A/μs
25 °C
S
VALUES
UNITS
190
ns
3.4
A
0.5
μC
IFM
trr
di
dt
0.5
t
Qrr
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
DC operation
UNITS
-40 to +150
°C
0.35
40
Mounting surface, smooth and greased
Approximate weight
Mounting torque
VALUES
°C/W
0.2
6
g
0.21
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(Ibf · in)
80APF02
Marking device
Case style TO-247AC 3L
80APF04
80APF06
Revision: 27-Feb-2019
Document Number: 93722
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VS-80APF0..-M3 Series
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180
RthJC (DC) = 0.35 K/W
140
130
Ø
Conduction angle
120
110
30°
100
120°
60°
90
90°
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
150
180°
DC
180°
120°
90°
60°
30°
160
140
120
RMS limit
100
80
60
Ø
40
Conduction period
20
TJ = 150 °C
0
80
0
10
30
20
40
50
60
70
90
80
20
0
Average Forward Current (A)
80
100
120
140
Fig. 4 - Forward Power Loss Characteristics
1000
150
140
130
Ø
Conduction period
120
110
30°
100
60°
90°
90
DC
180°
40
60
600
500
400
80
100
120
1
140
10
100
Average Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
140
1000
180°
120°
90°
60°
30°
100
900
Peak Half Sine Wave
Forward Current (A)
120
RMS limit
80
60
Ø
40
Conduction angle
20
TJ = 150 °C
10
20
30
40
50
60
70
80
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
800
700
600
500
400
300
0
0
700
200
80
20
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
800
300
120°
0
At any rated load condition and with
rated VRRM applied following surge.
900
RthJC (DC) = 0.35 K/W
Peak Half Sine Wave
Forward Current (A)
Maximum Allowable Case
Temperature (°C)
60
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Maximum Average Forward
Power Loss (W)
40
90
200
0.01
0.1
1
Average Forward Current (A)
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 27-Feb-2019
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VS-80APF0..-M3 Series
Instantaneous Forward Current (A)
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1000
100
TJ = 25 °C
TJ = 150 °C
10
80EPF.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.5
3.0
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.22
4.0
IFM = 125 A
3.5
0.18
IFM = 40 A
IFM = 80 A
0.16
IFM = 20 A
IFM = 10 A
0.14
0.12
0.10
0.08
0.06
Qrr - Typical Reverse
Recovery Charge (µC)
trr - Typical Reverse
Recovery Time (µs)
0.20
0.04
IFM = 40 A
2.5
2.0
IFM = 20 A
1.5
IFM = 10 A
1.0
IFM = 1 A
0
0
40
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.6
14
0.5
12
Qrr - Typical Reverse
Recovery Charge (µC)
trr - Typical Reverse
Recovery Time (µs)
IFM = 80 A
3.0
0.5
IFM = 1 A
TJ = 25 °C
IFM = 125 A
TJ = 25 °C
IFM = 80 A
0.4
IFM = 40 A
0.3
IFM = 20 A
IFM = 10 A
0.2
IFM = 1 A
0.1
IFM = 80 A
TJ = 150 °C
10
8
IFM = 40 A
6
IFM = 20 A
IFM = 10 A
4
2
TJ = 150 °C
IFM = 1 A
0
0
0
40
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Revision: 27-Feb-2019
Document Number: 93722
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-80APF0..-M3 Series
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Vishay Semiconductors
45
22
IFM = 125 A
TJ = 25 °C
18
40
IFM = 80 A
Irr - Typical Reverse
Recovery Current (A)
Irr - Typical Reverse
Recovery Current (A)
20
IFM = 40 A
16
14
IFM = 20 A
12
IFM = 10 A
10
8
6
IFM = 1 A
4
TJ = 150 °C
35
IFM = 80 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 1 A
30
25
20
15
10
5
2
0
0
40
0
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
ZthJC - Transient Thermal Impedance (K/W)
dI/dt - Rate of Fall of Forward Current (A/µs)
1
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
80EPF.. Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 27-Feb-2019
Document Number: 93722
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VS-80APF0..-M3 Series
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
80
A
P
F
06
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (80 = 80 A)
3
-
Circuit configuration:
A = single diode, 3 pins
4
-
Package:
P = TO-247AC 3L
5
-
Type of silicon:
F = fast recovery
6
-
Voltage code x 100 = VRRM
7
-
Environmental digit:
02 = 200 V
04 = 400 V
06 = 600 V
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-80APF02-M3
25
500
Antistatic plastic tubes
VS-80APF04-M3
25
500
Antistatic plastic tubes
VS-80APF06-M3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96138
Part marking information
www.vishay.com/doc?95007
Revision: 27-Feb-2019
Document Number: 93722
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-247AC 3L
DIMENSIONS in millimeters and inches
A
A
E (3)
B
A2
S
R/2 (2)
(Datum B)
Ø P (6)
Ø P1
Ø K M DBM
A
Q
D2
2 x R (2)
D1 (4)
D
Thermal pad
2
1
4
D
3
L1 (5)
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
C
2x e
A1
b4
E1 (4)
0.01 M D B M
(b1, b3, b5)
Plating
View A - A
Base metal
D DE
(c)
c1
(b, b2, b4)
C
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.17
1.37
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
C
(4)
View B
Section C - C, D - D, E - E
SYMBOL
E
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.046
0.054
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.35
15.29
15.87
13.46
5.46 BSC
0.254
14.20
16.10
3.71
4.29
3.56
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.053
0.602
0.625
0.53
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.14
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension Q
Revision: 20-Jun-17
Document Number: 96138
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Revision: 09-Jul-2021
1
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