VS-80APF10-M3

VS-80APF1.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 80 A FEATURES Base cathode • Glass passivated pellet chip junction 2 • 150 °C max. operating junction temperature • Low forward voltage drop and short reverse recovery time 1 2 3 TO-247AC 3L 1 Anode 3 Anode • Designed and qualified JEDEC®-JESD 47 according Available to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 80 A VR 1000 V, 1200 V VF at IF 1.35 V IFSM 1250 A trr 90 ns TJ max. 150 °C Package TO-247AC 3L Circuit configuration Single Snap factor 0.5 These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. DESCRIPTION The VS-80APF12L-M3 soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL TEST CONDITIONS VRRM IF(AV) Sinusoidal waveform IFSM VALUES UNITS 1000/1200 V 80 1250 trr 1 A, - 100 A/μs VF 40 A, TJ = 25 °C 90 TJ A ns 1.2 V -40 to +150 °C IRRM AT 150 °C mA VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-80APF10-M3 1000 1100 VS-80APF12-M3 1200 1300 15 Revision: 24-Jan-2020 Document Number: 93725 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80APF1.-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t TEST CONDITIONS VALUES TC = 92 °C, 180° conduction half sine wave UNITS 80 10 ms sine pulse, rated VRRM applied 1100 10 ms sine pulse, no voltage reapplied 1250 10 ms sine pulse, rated VRRM applied 5000 10 ms sine pulse, no voltage reapplied 7000 t = 0.1 ms to 10 ms, no voltage reapplied A A2s 70 000 A2√s VALUES UNITS ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 80 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C V mΩ 0.87 V 0.1 VR = Rated VRRM TJ = 150 °C 1.35 4.03 mA 15 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor TEST CONDITIONS IF at 80 Apk 25 A/μs 25 °C S VALUES UNITS 480 ns 7.1 A 2.1 μC IFM trr t dir dt Qrr 0.5 IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation Marking device UNITS -40 to +150 °C 0.35 °C/W 40 Mounting surface, smooth, and greased 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES Case style TO-247AC 3L 80APF10 80APF12 Revision: 24-Jan-2020 Document Number: 93725 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80APF1.-M3 Series www.vishay.com Vishay Semiconductors 150 140 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) RthJC (DC) = 0.35 °C/W 140 130 Ø 120 Conduction angle 110 100 60° 90° 90 180° 30° 100 80 RMS limit 60 Ø 40 Conduction angle 20 80EPF.. Series TJ = 150 °C 0 0 10 20 30 40 50 60 70 80 90 10 0 20 30 40 50 60 70 80 90 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 150 1200 RthJC (DC) = 0.35 °C/W 140 130 Ø 120 Conduction period 110 100 DC 60° 90 30° 120° 90° At any rated load condition and with rated VRRM applied following surge. 1100 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 120 120° 80 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 1000 900 800 700 600 500 400 180° 80 300 0 20 40 60 80 100 120 140 1 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 1300 200 DC 180° 120° 90° 60° 30° 175 150 125 1200 100 RMS limit 75 Ø 50 Conduction period 25 TJ = 150 °C 20 40 60 80 100 120 Maximum non-repetitive surge current versus pulse train duration. 1100 Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 1000 900 800 700 600 500 400 0 0 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 180° 120° 90° 60° 30° 140 300 0.01 0.1 1 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 24-Jan-2020 Document Number: 93725 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80APF1.-M3 Series Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 1000 100 TJ = 25 °C TJ = 150 °C 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 800 12 000 TJ = 25 °C Qrr - Typical Reverse Recovery Charge (nC) trr - Typical Reverse Recovery Time (ns) 700 600 500 IFM = 80 A 400 300 IFM = 40 A IFM = 20 A 200 IFM = 10 A TJ = 25 °C 10 000 IFM = 80 A 8000 IFM = 40 A 6000 IFM = 20 A 4000 IFM = 10 A 2000 100 IFM = 1 A IFM = 1 A 0 0 0 40 80 120 160 200 0 dI/dt - Rate of Fall of Forward Current (A/µs) 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 1800 25 000 1600 TJ = 150 °C Qrr - Typical Reverse Recovery Charge (nC) trr - Typical Reverse Recovery Time (ns) 40 1400 IFM = 80 A IFM = 40 A IFM = 20 A IFM = 10 A IFM = 1 A 1200 1000 800 600 400 IFM = 80 A TJ = 150 °C 20 000 15 000 IFM = 40 A IFM = 20 A 10 000 IFM = 10 A 5000 IFM = 1 A 200 0 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C Revision: 24-Jan-2020 Document Number: 93725 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80APF1.-M3 Series www.vishay.com Vishay Semiconductors 60 45 IFM = 80 A TJ = 25 °C 35 30 IFM = 40 A 25 IFM = 20 A 20 15 IFM = 10 A 10 IFM = 80 A TJ = 150 °C 50 Irr - Typical Reverse Recovery Current (A) Irr - Typical Reverse Recovery Current (A) 40 IFM = 40 A 40 IFM = 20 A 30 IFM = 10 A 20 10 5 IFM = 1 A IFM = 1 A 0 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Fig. 13 - Recovery Current Characteristics, TJ = 150 °C ZthJC - Transient Thermal Impedance (°C/W) dI/dt - Rate of Fall of Forward Current (A/µs) 1 Steady state value (DC operation) 0.1 0.01 0.001 0.0001 Single pulse 0.001 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.01 80EPF.. Series 0.1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 24-Jan-2020 Document Number: 93725 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80APF1.-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 80 A P F 12 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (80 = 80 A) 3 - Circuit configuration: A = single diode, 3 pins 4 - 5 - Package: P = TO-247AC 3L Type of silicon: F = fast recovery 6 - Voltage code x 100 = VRRM 7 - Environmental digit: 10 = 1000 V 12 = 1200 V -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-80APF10-M3 25 500 Antistatic plastic tubes VS-80APF12-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96138 Part marking information www.vishay.com/doc?95007 SPICE model www.vishay.com/doc?96692 Revision: 24-Jan-2020 Document Number: 93725 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AC 3L DIMENSIONS in millimeters and inches A A E (3) B A2 S R/2 (2) (Datum B) Ø P (6) Ø P1 Ø K M DBM A Q D2 2 x R (2) D1 (4) D Thermal pad 2 1 4 D 3 L1 (5) C L A See view B 2 x b2 3xb 0.10 M C A M C 2x e A1 b4 E1 (4) 0.01 M D B M (b1, b3, b5) Plating View A - A Base metal D DE (c) c1 (b, b2, b4) C A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.17 1.37 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - C (4) View B Section C - C, D - D, E - E SYMBOL E INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.046 0.054 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.35 15.29 15.87 13.46 5.46 BSC 0.254 14.20 16.10 3.71 4.29 3.56 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.053 0.602 0.625 0.53 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.14 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension Q Revision: 20-Jun-17 Document Number: 96138 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-80APF10PBF VS-80APF12PBF VS-80APF12-M3 VS-80APF10-M3