VS-80APF1.PbF Series, VS-80APF1.-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 80 A
FEATURES
Base
• 150 °C max. operating junction temperature
cathode
+
2
• Low forward voltage drop and short reverse
recovery time
• Designed and
JEDEC®-JESD47
3
2
1
TO-247AC
1
Anode -
3
- Anode
qualified
according
to
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
PRODUCT SUMMARY
Package
TO-247AC
IF(AV)
80 A
VR
1000 V, 1200 V
VF at IF
1.35 V
IFSM
1250 A
trr
90 ns
TJ max.
150 °C
Diode variation
Single die
Snap factor
0.5
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-80APF1... soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
TEST CONDITIONS
VRRM
IF(AV)
Sinusoidal waveform
IFSM
VALUES
UNITS
1000/1200
V
80
A
1250
trr
1 A, - 100 A/μs
VF
40 A, TJ = 25 °C
90
TJ
ns
1.2
V
-40 to 150
°C
VOLTAGE RATINGS
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
VS-80APF10PbF, VS-80APF10-M3
1000
1100
VS-80APF12PbF, VS-80APF12-M3
1200
1300
PART NUMBER
IRRM
AT 150 °C
mA
15
Revision: 06-Feb-14
Document Number: 93725
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-80APF1.PbF Series, VS-80APF1.-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
IF(AV)
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
TEST CONDITIONS
VALUES
TC = 92 °C, 180° conduction half sine wave
UNITS
80
10 ms sine pulse, rated VRRM applied
1100
10 ms sine pulse, no voltage reapplied
1250
10 ms sine pulse, rated VRRM applied
5000
10 ms sine pulse, no voltage reapplied
7000
t = 0.1 ms to 10 ms, no voltage reapplied
A
A2s
70 000
A2s
VALUES
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
VFM
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
80 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
V
m
0.87
V
0.1
VR = Rated VRRM
TJ = 150 °C
1.35
4.03
mA
15
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
TEST CONDITIONS
IF at 80 Apk
25 A/μs
25 °C
S
VALUES
UNITS
480
ns
7.1
A
2.1
μC
IFM
trr
t
dir
dt
Qrr
0.5
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
DC operation
Marking device
UNITS
-40 to 150
°C
0.35
°C/W
40
Mounting surface, smooth and greased
Approximate weight
Mounting torque
VALUES
0.2
6
g
0.21
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Case style TO-247AC
80APF10
80APF12
Revision: 06-Feb-14
Document Number: 93725
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-80APF1.PbF Series, VS-80APF1.-M3 Series
www.vishay.com
Vishay Semiconductors
150
140
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
RthJC (DC) = 0.35 °C/W
140
130
Ø
120
Conduction angle
110
100
60°
90°
90
180°
30°
80
RMS limit
60
Ø
40
Conduction angle
20
80EPF.. Series
TJ = 150 °C
0
0
10
20
30
40
50
60
70
80
90
10
0
20
30
40
50
60
70
80
90
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
1200
RthJC (DC) = 0.35 °C/W
140
130
Ø
120
Conduction period
110
100
DC
60°
90
30°
120°
90°
At any rated load condition and with
rated VRRM applied following surge.
1100
Peak Half Sine Wave
Forward Current (A)
Maximum Allowable Case
Temperature (°C)
100
120°
80
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
1000
900
800
700
600
500
400
180°
80
300
0
20
40
60
80
100
120
140
1
10
100
Average Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
1300
200
DC
180°
120°
90°
60°
30°
175
150
125
1200
100
RMS limit
75
Ø
50
Conduction period
25
TJ = 150 °C
20
40
60
80
100
120
Maximum non-repetitive surge current
versus pulse train duration.
1100
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
1000
900
800
700
600
500
400
0
0
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
180°
120°
90°
60°
30°
120
140
300
0.01
0.1
1
Average Forward Current (A)
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 06-Feb-14
Document Number: 93725
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-80APF1.PbF Series, VS-80APF1.-M3 Series
Instantaneous Forward Current (A)
www.vishay.com
Vishay Semiconductors
1000
100
TJ = 25 °C
TJ = 150 °C
10
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
800
12 000
TJ = 25 °C
Qrr - Typical Reverse
Recovery Charge (nC)
trr - Typical Reverse
Recovery Time (ns)
700
600
500
IFM = 80 A
400
300
IFM = 40 A
IFM = 20 A
200
IFM = 10 A
TJ = 25 °C
10 000
IFM = 80 A
8000
IFM = 40 A
6000
IFM = 20 A
4000
IFM = 10 A
2000
100
IFM = 1 A
IFM = 1 A
0
0
0
40
80
120
160
200
0
dI/dt - Rate of Fall of Forward Current (A/µs)
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
1800
25 000
1600
TJ = 150 °C
Qrr - Typical Reverse
Recovery Charge (nC)
trr - Typical Reverse
Recovery Time (ns)
40
1400
IFM = 80 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 1 A
1200
1000
800
600
400
IFM = 80 A
TJ = 150 °C
20 000
15 000
IFM = 40 A
IFM = 20 A
10 000
IFM = 10 A
5000
IFM = 1 A
200
0
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Revision: 06-Feb-14
Document Number: 93725
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-80APF1.PbF Series, VS-80APF1.-M3 Series
www.vishay.com
Vishay Semiconductors
60
45
IFM = 80 A
TJ = 25 °C
35
30
IFM = 40 A
25
IFM = 20 A
20
15
IFM = 10 A
10
IFM = 80 A
TJ = 150 °C
50
Irr - Typical Reverse
Recovery Current (A)
Irr - Typical Reverse
Recovery Current (A)
40
IFM = 40 A
40
IFM = 20 A
30
IFM = 10 A
20
10
5
IFM = 1 A
IFM = 1 A
0
0
0
40
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
ZthJC - Transient Thermal Impedance (°C/W)
dI/dt - Rate of Fall of Forward Current (A/µs)
1
Steady state value
(DC operation)
0.1
0.01
0.001
0.0001
Single pulse
0.001
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.01
80EPF.. Series
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 06-Feb-14
Document Number: 93725
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-80APF1.PbF Series, VS-80APF1.-M3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
80
A
P
F
12
PbF
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (80 = 80 A)
3
-
Circuit configuration:
A = Single diode, 3 pins
4
-
5
-
Package:
P = TO-247AC
Type of silicon:
F = Fast recovery
6
-
Voltage code x 100 = VRRM
7
-
Environmental digit:
10 = 1000 V
12 = 1200 V
PbF = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-80APF10PbF
25
500
Antistatic plastic tubes
VS-80APF10-M3
25
500
Antistatic plastic tubes
VS-80APF12PbF
25
500
Antistatic plastic tubes
VS-80APF12-M3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95542
TO-247AC PbF
www.vishay.com/doc?95226
TO-247AC -M3
www.vishay.com/doc?95007
Revision: 06-Feb-14
Document Number: 93725
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247 - 50 mils L/F
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Φ P
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
Φ P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Plating
(4)
E1
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.17
1.37
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.046
0.054
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
ØK
L
L1
N
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.35
15.29
15.87
13.46
5.46 BSC
0.254
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.053
0.602
0.625
0.53
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
Revision: 21-Apr-15
Document Number: 95542
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Vishay:
VS-80APF10PBF VS-80APF12PBF
