VS-80APS..-M3 Series
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Vishay Semiconductors
High Voltage, Input Rectifier Diode, 80 A
FEATURES
Base
cathode
• Very low forward voltage drop
2
• 150 °C max. operating junction temperature
• Glass passivated pellet chip junction
1
• Designed and qualified
JEDEC®-JESD 47
2
3
TO-247AC 3L
1
Anode
according
to
Available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
Anode
APPLICATIONS
PRIMARY CHARACTERISTICS
• Input rectification
IF(AV)
80 A
VR
800 V to 1200 V
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
VF at IF
1.17 V
DESCRIPTION
IFSM
1500 A
TJ max.
150 °C
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
Package
TO-247AC 3L
Circuit configuration
Single
These devices are intended for use in main rectification
(single or three phase bridge).
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Sinusoidal waveform
VRRM
Range
VALUES
UNITS
80
A
800/1200
V
1500
A
1.17
V
-40 to +150
°C
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
IFSM
VF
80 A, TJ = 25 °C
TJ
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VS-80APS08-M3
800
900
VS-80APS12-M3
1200
1300
1.5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
SYMBOL
TEST CONDITIONS
IF(AV)
TC = 100 °C, 180° conduction half sine wave
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
VALUES
UNITS
80
10 ms sine pulse, rated VRRM applied
1450
10 ms sine pulse, no voltage reapplied
1500
10 ms sine pulse, rated VRRM applied
10 500
10 ms sine pulse, no voltage reapplied
14 000
t = 0.1 ms to 10 ms, no voltage reapplied
140 000
A
A2s
A2s
Revision: 27-Feb-2019
Document Number: 93794
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VS-80APS..-M3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
VALUES
80 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
1.17
V
3.17
m
0.73
V
0.1
VR = Rated VRRM
TJ = 150 °C
UNITS
mA
1.5
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
VALUES
UNITS
-40 to 150
°C
DC operation
0.35
40
Mounting surface, flat, smooth and greased
0.2
Approximate weight
Mounting torque
6
g
0.21
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Marking device
80APS08
Case style TO-247AC 3L
150
80APS12
150
VS-80APS.. Series
RthJC (DC) = 0.35 K/W
140
130
Maximum Allowable Case
Temperature (°C)
Maximum Allowable Case
Temperture (°C)
°C/W
Ø
Conduction angle
120
110
30°
60°
100
90°
120°
90
VS-80APS.. Series
RthJC (DC) = 0.35 K/W
140
130
Ø
Conduction period
120
30°
60°
90°
110
120°
180°
100
DC
180°
90
80
0
10
20
30
40
50
60
70
80
90
0
20
40
60
80
100
120
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
140
Revision: 27-Feb-2019
Document Number: 93794
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-80APS..-M3 Series
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Vishay Semiconductors
1600
180°
120°
90°
60°
30°
100
80
RMS limit
60
Ø
40
Conduction angle
20
VS-80APS.. Series
TJ = 150 °C
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
1200
1000
800
VS-80APS.. Series
600
400
0
0
10
20
30
40
50
60
80
70
1
90
Fig. 3 - Forward Power Loss Characteristics
160
100
80
RMS limit
Ø
60
Conduction period
40
VS-80APS.. Series
TJ = 150 °C
20
1200
1000
800
600
400
VS-80APS.. Series
200
0.01
0
0
20
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150°C
No voltage reapplied
Rated Vrrm reapplied
1400
Peak Half Sine Wave
Forward Current (A)
120
100
1600
DC
180°
120°
90°
60°
30°
140
10
Number of Equal Amplitude
Half Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Average Forward Current (A)
Maximum Average Forward
Power Loss (W)
At any rated load condition and with
rated VRRM applied following surge.
1400
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
120
40
60
80
100
120
140
0.1
1
10
Pulse Train Duration (s)
Fig. 4 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
Average Forward Current (A)
1000
100
TJ = 25 °C
10
TJ = 150 °C
VS-80APS.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 27-Feb-2019
Document Number: 93794
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-80APS..-M3 Series
www.vishay.com
Vishay Semiconductors
1
ZthJC - Transient Thermal
Impedance (°C/W)
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
0.01
0.0001
0.001
VS-80APS.. Series
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
80
A
P
S
12
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating (80 = 80 A)
3
-
Circuit configuration:
4
-
Package:
-M3
A = single diode, 3 pins
P = TO-247AC 3L
5
-
Type of silicon:
6
-
Voltage ratings
S = standard recovery rectifier
7
08 = 800 V
12 = 1200 V
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-80APS08-M3
25
500
Antistatic plastic tubes
VS-80APS12-M3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96138
Part marking information
www.vishay.com/doc?95007
SPICE model
www.vishay.com/doc?95550
Revision: 27-Feb-2019
Document Number: 93794
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247AC 3L
DIMENSIONS in millimeters and inches
A
A
E (3)
B
A2
S
R/2 (2)
(Datum B)
Ø P (6)
Ø P1
Ø K M DBM
A
Q
D2
2 x R (2)
D1 (4)
D
Thermal pad
2
1
4
D
3
L1 (5)
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
C
2x e
A1
b4
E1 (4)
0.01 M D B M
(b1, b3, b5)
Plating
View A - A
Base metal
D DE
(c)
c1
(b, b2, b4)
C
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.17
1.37
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
C
(4)
View B
Section C - C, D - D, E - E
SYMBOL
E
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.046
0.054
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.35
15.29
15.87
13.46
5.46 BSC
0.254
14.20
16.10
3.71
4.29
3.56
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.053
0.602
0.625
0.53
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.14
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension Q
Revision: 20-Jun-17
Document Number: 96138
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 01-Jan-2019
1
Document Number: 91000