VS-80APS12PBF

VS-80APS..PbF Series, VS-80APS..-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES Base • Very low forward voltage drop cathode + 2 • 150 °C max. operating junction temperature • Glass passivated pellet chip junction • Designed and qualified JEDEC®-JESD 47 3 2 1 TO-247AC 1 Anode - according to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 - Anode Available APPLICATIONS PRODUCT SUMMARY Package TO-247AC IF(AV) 80 A • Input rectification • Vishay Semiconductors switches and output rectifiers which are available in identical package outlines VR 800 V to 1200 V VF at IF 1.17 V DESCRIPTION IFSM 1500 A TJ max. 150 °C High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. Diode variation Single die These devices are intended for use in main rectification (single or three phase bridge). MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) Sinusoidal waveform VRRM Range UNITS 80 A 800/1200 V 1500 A IFSM VF VALUES 80 A, TJ = 25 °C 1.17 V -40 to +150 °C VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA TJ VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VS-80APS08PbF, VS-80APS08-M3 800 900 VS-80APS12PbF, VS-80APS12-M3 1200 1300 1.5 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 100 °C, 180° conduction half sine wave 80 Maximum peak one cycle  non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t 10 ms sine pulse, rated VRRM applied 1450 10 ms sine pulse, no voltage reapplied 1500 10 ms sine pulse, rated VRRM applied 10 500 10 ms sine pulse, no voltage reapplied 14 000 t = 0.1 ms to 10 ms, no voltage reapplied 140 000 UNITS A A2s A2s Revision: 11-Feb-16 Document Number: 93794 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80APS..PbF Series, VS-80APS..-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL VFM Maximum forward voltage drop rt Forward slope resistance VF(TO) Threshold voltage IRM Maximum reverse leakage current TEST CONDITIONS VALUES UNITS 1.17 V 3.17 m 0.73 V 80 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C 0.1 VR = Rated VRRM TJ = 150 °C mA 1.5 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage  temperature range TJ, TStg Maximum thermal resistance,  junction to case RthJC Maximum thermal resistance,  junction to ambient RthJA Typical thermal resistance,  case to heatsink RthCS TEST CONDITIONS VALUES UNITS -40 to 150 °C DC operation 0.35 40 Mounting surface, flat, smooth and greased 0.2 Approximate weight Mounting torque 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Marking device 80APS08 Case style TO-247AC (JEDEC) 150 80APS12 150 VS-80APS.. Series RthJC (DC) = 0.35 K/W 140 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperture (°C) °C/W Ø Conduction angle 120 110 30° 60° 100 90° 120° 90 VS-80APS.. Series RthJC (DC) = 0.35 K/W 140 130 Ø Conduction period 120 30° 60° 90° 110 120° 180° 100 DC 180° 90 80 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics 140 Revision: 11-Feb-16 Document Number: 93794 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80APS..PbF Series, VS-80APS..-M3 Series www.vishay.com Vishay Semiconductors 1600 180° 120° 90° 60° 30° 100 80 RMS limit 60 Ø 40 Conduction angle 20 VS-80APS.. Series TJ = 150 °C Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 1200 1000 800 VS-80APS.. Series 600 400 0 0 10 20 30 40 50 60 80 70 1 90 Fig. 3 - Forward Power Loss Characteristics 160 100 80 RMS limit Ø 60 Conduction period 40 VS-80APS.. Series TJ = 150 °C 20 1200 1000 800 600 400 VS-80APS.. Series 200 0.01 0 0 20 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150°C No voltage reapplied Rated Vrrm reapplied 1400 Peak Half Sine Wave Forward Current (A) 120 100 1600 DC 180° 120° 90° 60° 30° 140 10 Number of Equal Amplitude Half Cycle Current Pulse (N) Fig. 5 - Maximum Non-Repetitive Surge Current Average Forward Current (A) Maximum Average Forward Power Loss (W) At any rated load condition and with rated VRRM applied following surge. 1400 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 120 40 60 80 100 120 140 0.1 1 10 Pulse Train Duration (s) Fig. 4 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) Average Forward Current (A) 1000 100 TJ = 25 °C 10 TJ = 150 °C VS-80APS.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Revision: 11-Feb-16 Document Number: 93794 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80APS..PbF Series, VS-80APS..-M3 Series www.vishay.com Vishay Semiconductors 1 ZthJC - Transient Thermal Impedance (°C/W) Steady state value (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.01 0.0001 0.001 VS-80APS.. Series 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 80 A P S 12 1 2 3 4 5 6 1 - PbF Vishay Semiconductors product 2 - Current rating (80 = 80 A) 3 - Circuit configuration: A = single diode, 3 pins 4 - 5 - Package: P = TO-247AC Type of silicon: S = standard recovery rectifier 6 7 - Voltage ratings 08 = 800 V 12 = 1200 V Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-80APS08PbF 25 500 PACKAGING DESCRIPTION Antistatic plastic tubes VS-80APS08-M3 25 500 Antistatic plastic tubes VS-80APS12PbF 25 500 Antistatic plastic tubes VS-80APS12-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model www.vishay.com/doc?95542 TO-247AC modified PbF www.vishay.com/doc?95226 TO-247AC modified -M3 www.vishay.com/doc?95007 www.vishay.com/doc?95550 Revision: 11-Feb-16 Document Number: 93794 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247 - 50 mils L/F DIMENSIONS in millimeters and inches A A (3) (6) Φ P E B (2) R/2 N A2 S (Datum B) Ø K M DBM Φ P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Plating (4) E1 Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.17 1.37 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.046 0.054 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e ØK L L1 N ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.35 15.29 15.87 13.46 5.46 BSC 0.254 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.053 0.602 0.625 0.53 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q Revision: 21-Apr-15 Document Number: 95542 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-80APS08PBF VS-80APS12PBF