VS-80APS16PBF

VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES Base cathode • Very low forward voltage drop 2 • 150 °C max. operating junction temperature • Glass passivated pellet chip junction 1 • Designed and qualified JEDEC®-JESD 47 2 3 TO-247AC 3L 1 Anode according to Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 Anode APPLICATIONS PRIMARY CHARACTERISTICS • Input rectification IF(AV) 80 A VR 1600 V • Vishay Semiconductors switches and output rectifiers which are available in identical package outlines VF at IF 1.17 V DESCRIPTION IFSM 1150 A TJ max. 150 °C High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. Package TO-247AC 3L Circuit configuration Single These devices are intended for use in main rectification (single or three phase bridge). MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS Sinusoidal waveform 80 A 1600 V 1150 A 1.17 V -40 to +150 °C VRRM IFSM VF 80 A, TJ = 25 °C TJ VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VS-80APS16-M3 1600 1700 1 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current SYMBOL TEST CONDITIONS IF(AV) TC = 100 °C, 180° conduction half sine wave 80 10 ms sine pulse, rated VRRM applied 965 IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t VALUES 10 ms sine pulse, no voltage reapplied 1150 10 ms sine pulse, rated VRRM applied 4655 10 ms sine pulse, no voltage reapplied 6585 t = 0.1 ms to 10 ms, no voltage reapplied 65 850 UNITS A A2s A2√s Revision: 05-Feb-2020 Document Number: 93795 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80APS16-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS VALUES 80 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C 1.17 V 3.17 mΩ 0.73 V 0.1 VR = Rated VRRM TJ = 150 °C UNITS mA 1.0 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS VALUES UNITS -40 to +150 °C DC operation 0.35 Mounting surface, smooth and greased 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque Marking device Case style TO-247AC 3L VS-80APS16 RthJC (DC) = 0.35 K/W Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 80APS16 150 150 140 130 Ø Conduction angle 120 110 30° °C/W 40 60° 100 90° 120° 90 VS-80APS16 RthJC (DC) = 0.35 K/W 140 130 Ø Conduction period 120 30° 60° 90° 110 120° 180° 100 DC 180° 80 90 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics 140 Revision: 05-Feb-2020 Document Number: 93795 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80APS16-M3 www.vishay.com 1100 180° 120° 90° 60° 30° 100 80 RMS limit 60 Ø 40 Conduction angle VS-80APS16 TJ = 150 °C 20 900 800 700 600 500 400 VS-80APS.. Series 300 200 0 0 10 20 30 40 50 60 80 70 1 90 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 3 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 1200 160 DC 180° 120° 90° 60° 30° 140 120 100 1000 RMS limit 80 60 Ø Conduction period 40 VS-80APS16 TJ = 150 °C 20 900 800 700 600 500 400 300 200 20 40 60 80 100 120 VS-80APS.. Series 100 0.01 0 0 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated Vrrm reapplied 1100 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) At any rated load condition and with rated Vrrm applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 1000 Peal Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 120 Vishay Semiconductors 140 0.1 1 10 Pulse Train Duration (s) Fig. 4 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) Average Forward Current (A) 1000 100 TJ = 25 °C TJ = 150 °C 10 VS-80APS16 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Characteristics Fig. 7 - Forward Voltage Drop Characteristics Revision: 05-Feb-2020 Document Number: 93795 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80APS16-M3 www.vishay.com Vishay Semiconductors 1 ZthJC - Transient Thermal Impedance (°C/W) Steady state value (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.01 0.0001 0.001 VS-80APS16 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 80 A P S 16 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (80 = 80 A) 3 - Circuit configuration: A = single diode, 3 pins 4 - Package: P = TO-247AC 3L 5 - 6 - Type of silicon: S = standard recovery rectifier 7 Voltage rating (16 = 1600 V) Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-80APS16-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96138 Part marking information www.vishay.com/doc?95007 SPICE model www.vishay.com/doc?96695 Revision: 05-Feb-2020 Document Number: 93795 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AC 3L DIMENSIONS in millimeters and inches A A E (3) B A2 S R/2 (2) (Datum B) Ø P (6) Ø P1 Ø K M DBM A Q D2 2 x R (2) D1 (4) D Thermal pad 2 1 4 D 3 L1 (5) C L A See view B 2 x b2 3xb 0.10 M C A M C 2x e A1 b4 E1 (4) 0.01 M D B M (b1, b3, b5) Plating View A - A Base metal D DE (c) c1 (b, b2, b4) C A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.17 1.37 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - C (4) View B Section C - C, D - D, E - E SYMBOL E INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.046 0.054 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.35 15.29 15.87 13.46 5.46 BSC 0.254 14.20 16.10 3.71 4.29 3.56 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.053 0.602 0.625 0.53 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.14 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension Q Revision: 20-Jun-17 Document Number: 96138 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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