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VS-80EBU02

VS-80EBU02

  • 厂商:

    TFUNK(威世)

  • 封装:

    PowIRtab

  • 描述:

    DIODEUFAST200V80APOWIRTAB

  • 数据手册
  • 价格&库存
VS-80EBU02 数据手册
Bulletin PD-20740 rev. B 02/06 80EBU02 Ultrafast Soft Recovery Diode Features • Ultrafast Recovery • 175°C Operating Junction Temperature • Screw Mounting Only • Lead-Free Plating trr = 35ns IF(AV) = 80Amp VR = 200V Benefits • Reduced RFI and EMI • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count Description/ Applications These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. Absolute Maximum Ratings Parameters Max Units 200 V Continuous Forward Current, TC = 112°C 80 A Single Pulse Forward Current, TC = 25°C 800 VR Cathode to Anode Voltage IF(AV) IFSM IFRM Maximum Repetitive Forward Current TJ, TSTG Operating Junction and Storage Temperatures 160 - 55 to 175 °C Square Wave, 20kHz Case Styles PowIRtab Document Number: 93024 www.vishay.com 1 80EBU02 Bulletin PD-20740 rev. B 02/06 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions VBR, Vr Breakdown Voltage, Blocking Voltage 200 VF Forward Voltage Reverse Leakage Current IR - - V IR = 50µA - 0.98 1.13 V IF = 80A - 0.79 0.92 V IF = 80A, TJ = 175°C - - 50 µA VR = VR Rated - - 2 mA TJ = 150°C, VR = VR Rated CT Junction Capacitance - 89 - pF VR = 200V LS Series Inductance - 3.5 - nH Measured lead to lead 5mm from package body Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameters t rr Reverse Recovery Time IRRM Qrr Peak Recovery Current Reverse Recovery Charge Min Typ Max Units Test Conditions - - 35 - 32 - TJ = 25°C IF = 80A - 52 - TJ = 125°C - 4.4 - VR = 160V diF /dt = 200A/µs - 8.8 - - 70 - nC - 240 - ns A IF = 1.0A, diF/dt = 200A/µs, VR = 30V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C Thermal - Mechanical Characteristics Parameters RthJC Thermal Resistance, Junction to Case RthCS Thermal Resistance, Case to Heatsink Wt Weight Min Typ Max Units 0.70 K/W 5.02 g 0.2 0.18 T Mounting Torque (oz) 1.2 2.4 N*m 10 20 lbf.in Mounting Surface, Flat, Smooth and Greased Document Number: 93024 www.vishay.com 2 80EBU02 Bulletin PD-20740 rev. B 02/06 1000 100 T = 175˚C T J = 175˚C 100 Reverse Current - I R (µA) Instantaneous Forward Current - I F (A) 1000 125˚C 10 1 25˚C 0.1 0.01 0.001 J 0 50 T = 125˚C 100 150 200 Reverse Voltage - VR (V) J Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage T = 25˚C J Junction Capacitance - C T (pF) 10000 10 T J = 25˚C 1000 100 1 10 0 0.5 1 1.5 2 2.5 1 Forward Voltage Drop - VFM (V) 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics Thermal Impedance Z thJC (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 t2 Single Pulse (Thermal Resistance) Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics Document Number: 93024 www.vishay.com 3 80EBU02 Bulletin PD-20740 rev. B 02/06 120 RMS Limit Average Power Loss ( Watts ) Allowable Case Temperature (°C) 180 160 140 DC 120 100 Square wave (D = 0.50) 80% Rated Vr applied 80 100 80 40 20 see note (3) 0 60 0 20 40 60 80 100 0 120 Average Forward Current - IF(AV) (A) 60 80 100 120 1200 IF = 160A IF = 80A IF = 40A 60 Vr = 160V Tj = 125˚C Tj = 25˚C 1000 800 Qrr ( nC ) 50 40 IF = 160A IF = 80A IF = 40A 600 400 30 10 100 40 Fig. 6 - Forward Power Loss Characteristics 70 20 20 Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current trr ( ns ) D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 60 200 Vr = 160V Tj = 125˚C Tj = 25˚C di F /dt (A/µs ) 1000 Fig. 7 - Typical Reverse Recovery time vs. di F /dt 0 100 1000 di F /dt (A/µs ) Fig. 8 - Typical Stored Charge vs. di F /dt (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR Document Number: 93024 www.vishay.com 4 80EBU02 Bulletin PD-20740 rev. B 02/06 Reverse Recovery Circuit VR = 200V 0.01 Ω L = 70µH D.U.T. di F /dt dif/dt ADJUST D IRFP250 G S Fig. 9- Reverse Recovery Parameter Test Circuit 3 trr IF tb ta 0 Q rr 2 I RRM 4 0.5 I RRM di(rec)M/dt 5 0.75 I RRM 1 /dt di fF/dt 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by t rr and IRRM t rr x I RRM Q rr = 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93024 www.vishay.com 5 80EBU02 Bulletin PD-20740 rev. B 02/06 Outline Table Dimensions in millimeters and (inches) Ordering Information Table Device Code 80 E B U 02 1 2 3 4 5 1 - Current Rating 2 - Single Diode 3 - PowIRtab 4 - Ultrafast Recovery 5 - Voltage Rating (80 = 80A) (Ultrafast/ Hyperfast only) (02 = 200V) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 02/06 Document Number: 93024 www.vishay.com 6 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 99901 Revision: 08-Mar-07 www.vishay.com 1
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VS-80EBU02
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VS-80EBU02
    •  国内价格
    • 25+56.34425

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