VS-80EBU04

VS-80EBU04 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 80 A FRED Pt® FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only Cathode • Designed and qualified JEDEC®-JESD 47 Anode according to • PowerTab® package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PowerTab® BENEFITS • Reduced RFI and EMI • Higher frequency operation PRODUCT SUMMARY • Reduced snubbing Package PowerTab® IF(AV) 80 A VR 400 V DESCRIPTION / APPLICATIONS VF at IF 0.92 V trr (typ.) See recovery table TJ max. 175 °C Diode variation Single die These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. • Reduced parts count ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current SYMBOL TEST CONDITIONS MAX. UNITS 400 V VR IF(AV) TC = 101 °C Single pulse forward current IFSM TC = 25 °C 800 Maximum repetitive forward current IFRM Square wave, 20 kHz 160 Operating junction and  storage temperatures 80 TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, Vr VF TEST CONDITIONS MIN. TYP. MAX. 400 - - IF = 80 A - 1.1 1.3 IF = 80 A, TJ = 175 °C - 0.92 1.08 0.98 1.15 IR = 100 μA IF = 80 A, TJ = 125 °C UNITS V VR = VR rated - - 50 μA TJ = 150 °C, VR = VR rated - - 2 mA Reverse leakage current IR Junction capacitance CT VR = 200 V - 50 - pF Series inductance LS Measured lead to lead 5 mm from package body - 3.5 - nH Revision: 09-Jun-15 Document Number: 93025 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU04 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current TEST CONDITIONS TYP. MAX. - 50 60 TJ = 25 °C - 87 - TJ = 125 °C - 151 - - 9.3 - - 17.2 - IF = 80 A VR = 200 V dIF/dt = 200 A/μs TJ = 25 °C IRRM Reverse recovery charge MIN. IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V TJ = 125 °C Qrr UNITS ns A TJ = 25 °C - 405 - TJ = 125 °C - 1300 - MIN. TYP. MAX. - - 0.70 - 0.2 - - - 5.02 - 0.18 - oz. - 2.4 (20) N·m (lbf · in) nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Thermal resistance, junction to heatsink RthCS TEST CONDITIONS °C/W Mounting surface, flat, smooth and greased Weight 1.2 (10) Mounting torque Case style PowerTab® Marking device g 80EBU04 1000 1000 TJ = 175 ˚C IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) UNITS 100 TJ = 175 ˚C TJ = 125 ˚C TJ = 25 ˚C 10 1 100 125 ˚C 10 1 25 ˚C 0.1 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 0 100 200 300 400 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 09-Jun-15 Document Number: 93025 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU04 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 TJ = 25 ˚C 100 10 1 10 100 1000 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 t2 Single Pulse (Thermal Resistance) Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 180 140 160 120 RMS Limit Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 140 DC 120 100 Square wave (D = 0.50) 80 % Rated VR applied 80 see note (1) 60 0 20 40 60 80 100 120 100 80 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 60 40 20 0 0 20 40 60 80 100 120 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 09-Jun-15 Document Number: 93025 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU04 www.vishay.com 250 4500 VR = 200 V TJ = 125 ˚C TJ = 25 ˚C 4000 VR = 200 V TJ = 125 ˚C TJ = 25 ˚C 3500 200 IF = 160 A IF = 80 A IF = 40 A 3000 Qrr (nC) trr (ns) Vishay Semiconductors 150 IF = 160A IF = 80A IF = 40A 2500 2000 1500 100 1000 500 0 100 50 100 1000 1000 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit Revision: 09-Jun-15 Document Number: 93025 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU04 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 (4) Qrr (2) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- 80 E B U 04 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (80 = 80 A) 3 - E = Single diode 4 - B = PowerTab® (ultrafast/hyperfast only) 5 - U = Ultrafast recovery 6 - Voltage rating (04 = 400 V) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95240 Part marking information www.vishay.com/doc?95370 Application note www.vishay.com/doc?95179 Revision: 09-Jun-15 Document Number: 93025 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab® 15.90 (0.62) 15.60 (0.61) 11.90 (0.47) 12.40 (0.49) Lead 1 Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) Lead 2 4.95 (0.19) 4.75 (0.18) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 5.20 (0.20) 4.95 (0.19) 3.15 (0.12) 3.00 (0.11) 0.60 (0.02) 0.40 (0.01) 5.45 REF. (0.21 REF.) 39.95 (1.57) 39.55 (1.56) “G” see note 27.65 (1.08) 27.25 (1.07) 15.60 (0.61) 14.80 (0.58) 1.35 (0.05) 1.20 (0.04) 18.50 (0.73) 17.85 (0.70) 4.70 (0.19) 4.50 (0.18) 8.80 (0.35) 8.20 (0.32) DIMENSIONS in millimeters (inches) 1.30 (0.05) 1.10 (0.04) 12.20 (0.48) 12.00 (0.47) Lead assignments Lead 1 = Cathode Lead 2 = Anode Note: Outline conform to JEDEC® TO-275, except for dimension “G” only Revision: 10-Jun-2021 Document Number: 95240 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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