VS-80PF(R)...(W) Series
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Vishay Semiconductors
Standard Recovery Diodes,
Generation 2 DO-5 (DO-203AB) (Stud Version), 80 A
80PF(R)...
80PF(R)...W
FEATURES
• High surge current capability
• Designed for a wide range of applications
• Stud cathode and stud anode version
• Wire version available
• Low thermal resistance
• Designed and qualified for multiple level
DO-5 (DO-203AB)
DO-5 (DO-203AB)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Battery charges
PRIMARY CHARACTERISTICS
• Converters
IF(AV)
80 A
Package
DO-5 (DO-203AB)
Circuit configuration
Single
• Power supplies
• Machine tool controls
• Welding
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
I2t
VRRM
UNITS
80
A
TC
140
°C
126
A
50 Hz
1500
60 Hz
1570
IF(RMS)
IFSM
VALUES
A
50 Hz
11 250
60 Hz
10 230
Range
400 to 1200
V
-55 to +180
°C
IRRM MAXIMUM
AT TJ = 150 °C
mA
TJ
A2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-80PF(R)...(W)
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
40
400
500
80
800
960
120
1200
1440
9
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VS-80PF(R)...(W) Series
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FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
Maximum RMS forward current
IF(AV)
TEST CONDITIONS
180° conduction, half sine wave
IF(RMS)
No voltage
reapplied
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
t = 8.3 ms
100 % VRRM
reapplied
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
I2t
Maximum
I2t
for fusing
t = 8.3 ms
I2t
Low level value of threshold voltage
Low level value of forward
slope resistance
Maximum forward voltage drop
UNITS
80
A
140
°C
126
A
1500
1570
A
1260
Sinusoidal half wave,
initial TJ = 150 °C
1320
11 250
10 230
A2s
100 % VRRM
reapplied
7200
t = 0.1 ms to 10 ms, no voltage reapplied
112 500
A2s
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
VALUES
7950
VF(TO)
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.73
V
rf
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
3.0
m
VFM
Ipk = 220 A, TJ = 25 °C, tp = 400 μs rectangular wave
1.40
V
VALUES
UNITS
-55 to +180
°C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating and
storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.30
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.25
Not lubricated threads, tighting on nut (1)
3.4
(30)
Lubricated threads, tighting on nut (1)
2.3
(20)
K/W
Allowable mounting torque
Not lubricated threads, tighting on Hexagon
4.2
(37)
(2)
3.2
(28)
Lubricated threads, tighting on Hexagon (2)
Approximate weight
Case style
N·m
(lbf · in)
See dimensions - link at the end of datasheet
15.8
g
0.56
oz.
DO-5 (DO-203AB)
Notes
(1) Recommended for pass-through holes
(2) Torque must be applicable only to Hexagon and not to plastic structure, recommended for holed heatsink
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.14
0.10
120°
0.16
0.17
90°
0.21
0.22
60°
0.30
0.31
30°
0.50
0.50
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
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VS-80PF(R)...(W) Series
180
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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80PF(R) Series
RthJC = 0.3 K/W
170
160
Conduction Angle
150
140
180°
120°
130
90°
120
60°
30°
110
0
10 20 30 40 50 60 70 80 90
180
80PF(R) Series
RthJC (DC) = 0.3 K/W
170
160
Conduction Period
150
30°
140
60°
90°
130
120°
0
20
Average Forward Current (A)
100 120 140
60
90
/W
3K
40
5 K/W
Conduction Angle
K/W
Maximum Allowable Forward Power Loss (W)
80
K/W
60
20
60
0.3
RMS Limit
/W
W
2K
W
1.5
K/
1K
K/
7
80
0.5
0.
120°
90°
60°
30°
100
40
Fig. 2 - Current Ratings Characteristics
180°
120
DC
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
140
180°
120
/W
80PF(R) Series
Tj = 180°C
0
0
0
10 20 30 40 50 60 70 80
Average Forward Current (A)
30
120
150
180
Maximum Allowable Ambient Temperature (°C)
140
K/W
20
W
Conduction Period
60
90
K/W
/W
3K
40
0.3
30°
60 RMS Limit
/W
W
2K
K/
80
1.5
K/
7
1K
120°
90°
60°
100
0.5
DC
180°
120
0.
Maximum Allowable Forward Power Loss (W)
Fig. 3 - Forward Power Loss Characteristics
/W
5 K/W
80PF(R) Series
Tj = 180°C
0
0
20
40
60
80
0
100 120 140
Average Forward Current (A)
30
120
150
180
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
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VS-80PF(R)...(W) Series
Vishay Semiconductors
1000
1400
At Any Rated Load Condition And With
1300
Instantaneous Forward Current (A)
Peak Haf Sine Wave Forward Current (A)
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Rated Vrrm Applied Following Surge.
Initial Tj = 150°C
@ 60 Hz 0.0083 s
1200
1100
@ 50 Hz 0.0100 s
1000
900
800
700
600
80PF(R) Series
500
100
10
Tj = 180°C
80PF(R) Series
1
400
1
10
0
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
1600
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
1400
Initial Tj = 150°C
No Voltage Reapplied
1200
Rated Vrrm Reapplied
1000
800
600
400
80PF(R) Series
200
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
1
2
3
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Transient Thermal Impedance Z thJC (K/W)
Fig. 5 - Maximum Non-Repetitive Surge Current
Peak Haf Sine Wave Forward Current (A)
Tj = 25°C
1
Steady State Value
RthJC = 0.3 K/W
(DC Operation)
0.1
80PF(R) Series
0.01
0.0001 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
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VS-80PF(R)...(W) Series
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ORDERING INFORMATION TABLE
Device code
VS-
80
PF
R
120
W
1
2
3
4
5
6
1
-
2
-
Vishay Semiconductors product
80 = standard device
82 = isolated lead on standard terminal
with silicone sleeve available for 1200 V only
(red = reverse polarity)
(blue = normal polarity)
3
-
4
-
PF = plastic package
None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
5
-
6
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
None = standard terminal
(see dimensions for 80PF(R)... - link at the end of datasheet)
W = wire terminal
(see dimensions for 80PF(R)...W - link at the end of datasheet)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95345
Revision: 11-Jan-18
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Outline Dimensions
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Vishay Semiconductors
DO-203AB (DO-5) for 50PF(R)...(W), 80PF(R)...(W),
and 95PF(R)...(W) Series
DIMENSIONS FOR 80PF(R), 50PF(R), AND 95PF(R) SERIES in millimeters
6.45 MIN.
Ø3
4.2 MAX.
1.2 MAX.
3.5 MIN.
4 MIN.
Plastic cap.
25.4 MAX.
11.45 MAX.
2.4 REF.
11 ± 0.4
1/4"28-UNF-2A
17.25 MAX.
Ø 15.95 MAX.
Ø 17.15 MAX.
18.9
+ 0.1
0.0
Revision: 20-Apr-16
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Outline Dimensions
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Vishay Semiconductors
DIMENSIONS FOR 80PF(R)...(W), 50PF(R)...(W), AND 95PF(R)...(W) SERIES in millimeters
2.05 MAX.
Plastic cap.
25.4 MAX.
11.45 MAX.
2.4 REF.
11 ± 0.4
1/4"-28-UNF-2A
17.25 MAX.
Ø 15.95 MAX.
Ø 17.15 MAX.
18.9
+ 0.1
0.0
Revision: 20-Apr-16
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Outline Dimensions
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DIMENSIONS FOR 52PF(R), 82PF(R), AND 97PF(R) SERIES in millimeters
11.20 - 12.20
Ø 6.80 - 7.00
6.6 mm2 external lead with
blue or red sleeve insulation
115.00 - 123.00
127.40 - 134.40
Plastic cap.
11.05 - 11.45
2.4 REF.
10.60 - 11.40
1/4"-28-UNF-2A
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