VS-80TPS16L-M3

VS-80TPS16L-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 80 A FEATURES 2 (A) • Designed and qualified according to JEDEC®-JESD 47 • 150 °C maximum temperature 1 2 1 (K) junction • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 TO-247AD 3L operating (G) 3 APPLICATIONS PRIMARY CHARACTERISTICS IT(AV) 80 A VDRM/VRRM 1600 V VTM (typ.) 1.16 V IGT 100 mA TJ -40 °C to +150 °C Package TO-247AD 3L Circuit configuration Single SCR Typical usage is in input rectification crowbar (soft start) and AC switch motor control, UPS, welding, and battery charge. DESCRIPTION The VS-80TPS16L high voltage series of silicon controlled rectifiers are specifically designed for medium power switching, and phase control applications. The glass passivation technology used, has reliable operation up to 150 °C junction temperature. MAJOR RATINGS AND CHARACTERISTICS PARAMETER SYMBOL Peak repetitive reverse voltage VRRM/VDRM On-state voltage VT TEST CONDITIONS VALUES 80 A, TJ = 125 °C, typical 80 IT(AV) Maximum continuous RMS on-state current IRMS 126 Non-repetitive peak surge current ITSM 1000 Maximum operating junction and storage temperature range V 1.16 Average rectified forward current Maximum rate of rise UNITS 1600 A dV/dt 1000 V/μs TJ, TStg -40 to +150 °C VOLTAGE RATINGS PART NUMBER VS-80TPS16L-M3 VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V TYP. IRRM/IDRM AT 125 °C mA 1600 1700 10 Revision: 19-Dec-2018 Document Number: 96072 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80TPS16L-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum continuous RMS on-state current as AC switch IT(RMS) Peak, one-cycle non-repetitive surge current ITSM I2t for fusing I2t I2√t for fusing I2√t On-state voltage VT Low level value of threshold voltage VT01 High level value of threshold voltage VT02 Low level value of on-state slope resistance rt1 High level value of on-state slope resistance rt2 Rate of rise of turned-on current dI/dt Holding current IH Latching current IL Reverse and direct leakage current Rate of rise of off-state voltage IRRM/IDRM dV/dt TEST CONDITIONS TYP. TC = 113 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied MAX. UNITS - 80 - 126 - 840 - 1000 - 3536 10 ms sine pulse, no voltage reapplied - 5000 t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 °C - 50 000 80 A, TJ = 25 °C 1.22 1.40 160 A, TJ = 25 °C 1.48 1.66 80 A, TJ = 125 °C 1.16 1.24 160 A, TJ = 125 °C 1.49 1.62 10 ms sine pulse, rated VRRM applied Initial TJ = TJ maximum A A2s A2√s V - 0.80 - 0.89 - 4.82 - 4.51 - 500 - 200 - 400 TJ = 25 °C 50 200 TJ = 125 °C 10 60 mA - 1000 V/μs TYP. MAX. UNITS - 10 - 2.5 - 2.5 TJ = 150 °C TJ = 150 °C TJ = 125 °C, VR = 1000 V, IT = 100 A, Igt = 450 mA, VGT = 2.5 V Anode supply = 6 V, resistive load, TJ = 25 °C TJ = TJ maximum, linear to 80 % VDRM, Rg-k = open V mΩ A/μs mA μA TRIGGERING PARAMETER Peak gate power Average gate power Peak gate current Peak negative gate voltage Required DC gate voltage to trigger SYMBOL PGM PG(AV) TEST CONDITIONS 10 ms sine pulse, no voltage reapplied IGM -VGM VGT TJ = 25 °C Anode supply = 6 V resistive load Required DC gate to trigger IGT TJ = 25 °C Anode supply = 6 V resistive load DC gate voltage not to trigger VGD DC gate current not to trigger IGD TJ = 125 °C, VDRM = 80 % rated value - 10 - 1.5 W A V - 100 mA - 0.20 V - 5 mA TYP. MAX. UNITS 2 - 150 - SWITCHING PARAMETER SYMBOL Turn-on time tgt IT = 80 A, VD = 50 % VDRM, Igt = 300 mA, TJ = 25 °C TEST CONDITIONS Turn-off time tq IT = 80 A, VD = 80 % VDRM, dV/dt = 20 V/μs, tp = 200 μs Igt = 100 mA, dI/dt = 10 A/μs, VR = 100 V, TJ = 150 °C μs Revision: 19-Dec-2018 Document Number: 96072 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80TPS16L-M3 www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction and storage temperature range MIN. MAX. UNITS TJ, TStg -40 150 °C RthJC - 0.23 Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS TEST CONDITIONS Mounting surface, smooth, and greased Approximate weight Mounting torque °C/W 40 0.20 6 (0.21) g (oz.) minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Marking device Case style TO-247AD 3L 80TPS16L ΔRthJ-HS CONDUCTION PER JUNCTION SINE HALF-WAVE CONDUCTION 90° 60° 30° 180° 120° 90° 60° 30° 0.031 0.036 0.040 0.042 0.044 0.028 0.036 0.038 0.040 0.042 150 RthJC (DC) = 0.23 °C/W 140 130 Conduction Angle 120 110 100 90 80 70 30° 60 60 ° 180° 90° 120° 50 0 20 40 60 80 100 120 140 160 RMS limit 125 100 75 50 Conduction Angle 25 TJ = 150 °C 0 0 130 Conduction Angle 110 100 90 80 70 60 30° 60° 90° 120° 180° DC 40 0 40 80 120 160 200 20 40 60 80 100 Average On-state Current (A) RthJC (DC) = 0.23 °C/W 50 180° 120° 90° 60° 30° Fig. 3 - On-State Power Loss Characteristics 150 120 °C/W 150 Average On-state Current (A) Fig. 1 - Current Rating Characteristics 140 UNITS 120° 240 Max. Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) VS-80TPS16L-M3 RECTANGULAR WAVE CONDUCTION 180° Max. Average On-state Power Loss (W) DEVICE 200 140 180° 120° 90° 60° 30° 120 RMS limit 180 160 DC 100 80 60 Conduction Angle 40 20 TJ = 150 °C 0 0 20 40 60 80 100 120 140 Average On-state Current (A) Average On-state Current (A) Fig. 2 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics Revision: 19-Dec-2018 Document Number: 96072 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80TPS16L-M3 Vishay Semiconductors Peak Half Sine Wave On- State Current (A) Peak Half Sine Wave On-State Current (A) www.vishay.com 900 At any rated load condition and with rated Vrrm applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 800 700 600 500 400 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulse (N) 1000 Maximum non repetitive surge current vs. pulse train duration. Control of conduction may not be maintanined 900 Initial TJ = 150 °C No voltage reapplied Rated Vrrm reapplied 800 700 600 500 400 300 0.01 0.1 1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current IF - Instantaneous Forward Current (A) 1000 100 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 0.4 0.8 1.2 1.6 2.0 2.4 VF - Forward Voltage Drop (V) Z thJC - Thermal Impedance Junction to Case (°C/W) Fig. 7 - On-State Voltage Drop Characteristics 1 80TPS16L Steady state value (DC operation) 0.50 0.1 0.33 0.25 PDM 0.17 t2 0.08 0.01 0.0001 t1 0.001 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC Single pulse 0.01 0.1 1 10 t 1 - Rectangular Pulse Duration (s) Fig. 8 - Maximum Thermal Impedance ZthJC Characteristics Revision: 19-Dec-2018 Document Number: 96072 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80TPS16L-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 80 T P S 16 L -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current code (80 = 80 A) 3 - Circuit configuration: T = thyristor 4 - 5 - P = TO-247 package Type of silicon: S = standard recovery rectifier 6 - Voltage code (16 = 1600 V) 7 - Package L = long lead 8 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-80TPS16L-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95626 Part marking information www.vishay.com/doc?95007 Revision: 19-Dec-2018 Document Number: 96072 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 3L DIMENSIONS in millimeters and inches A A (3) (6) Φ P E B (2) R/2 A2 S (Datum B) Ø K M DBM Φ P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L (4) E1 A 0.01 M D B M View A - A See view B 2 x b2 3xb C 2x e b4 A1 0.10 M C A M (b1, b3, b5) Plating Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 19.81 20.32 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.53 0.215 BSC 0.010 0.780 0.800 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 06-Mar-2020 Document Number: 95626 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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