VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series
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Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 80 A
FEATURES
• Hermetic glass-metal seal
• International standard case TO-94 (TO-209AC)
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-94 (TO-209AC)
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
PRIMARY CHARACTERISTICS
• AC controllers
IT(AV)
80 A
VDRM/VRRM
400 V, 800 V, 1200 V
VTM
1.60 V
IGT
120 mA
TJ
-40 °C to +125 °C
Package
TO-94 (TO-209AC)
Circuit configuration
Single SCR
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
IT(RMS)
VALUES
UNITS
80
A
85
°C
125
ITSM
I2t
50 Hz
1900
60 Hz
1990
50 Hz
18
60 Hz
16
VDRM/VRRM
tq
Typical
TJ
A
kA2s
400 to 1200
V
110
μs
-40 to +125
°C
IDRM/IRRM MAXIMUM
AT TJ = 125 °C
mA
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-80RIA
VS-81RIA
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
40
400
500
80
800
900
120
1200
1300
15
Revision: 27-Sep-17
Document Number: 94392
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
TEST CONDITIONS
180° conduction, half sine wave
Maximum I2t for fusing
I2t
°C
125
1900
t = 10 ms
t = 10 ms
I2t
A
85
t = 10 ms
t = 8.3 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
No voltage
t = 10 ms
100 % VRRM
t = 8.3 ms
reapplied
1990
1675
18
16
12.7
180.5
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.99
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
1.13
Low level value of on-state slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
2.29
High level value of on-state slope resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
1.84
Ipk = 250 A, TJ = 25 °C, tp = 10 ms sine pulse
1.60
VTM
IH
Typical latching current
IL
TJ = 25 °C, anode supply 12 V resistive load
kA2s
11.7
t = 0.1 ms to 10 ms, no voltage reapplied
VT(TO)1
Maximum holding current
A
1600
Sinusoidal half wave,
initial TJ = TJ maximum
Low level value of threshold voltage
Maximum on-state voltage
UNITS
80
DC at 75 °C case temperature
t = 8.3 ms
Maximum I2t for fusing
VALUES
200
400
kA2s
V
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
TJ = 125 °C, Vd = Rated VDRM, ITM = 2 x dI/dt snubber
0.2 μF, 15 , gate pulse: 20 V, 65 , tp = 6 μs, tr = 0.5 μs
Per JEDEC standard RS-397, 5.2.2.6.
VALUES
UNITS
300
A/μs
Typical delay time
td
Gate pulse: 10 V, 15 source, tp = 6 μs, tr = 0.1 μs,
Vd = Rated VDRM, ITM = 50 Adc, TJ = 25 °C
Typical turn-off time
tq
ITM = 50 A, TJ = TJ maximum, dI/dt = -5 A/μs, VR = 50 V,
dV/dt = 20 V/μs, gate bias: 0 V 25 , tp = 500 μs
110
SYMBOL
TEST CONDITIONS
VALUES
UNITS
1
μs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = 125 °C exponential to 67 % rated VDRM
500
V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = 125 °C rated VDRM/VRRM applied
15
mA
Revision: 27-Sep-17
Document Number: 94392
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series
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Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
TEST CONDITIONS
VALUES
TJ = TJ maximum, tp 5 ms
12
TJ = TJ maximum, f = 50 Hz, d% = 50
3
3
TJ = TJ maximum, tp 5 ms
20
10
IGT
TJ = 25 °C
Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 6 V anode
to cathode applied
TJ = 125 °C
TJ = - 40 °C
Maximum DC gate voltage required to trigger
VGT
TJ = 25 °C
TJ = 125 °C
DC gate current not to trigger
VGD
A
V
120
mA
60
3.5
2.5
V
1.5
IGD
DC gate voltage not to trigger
W
270
TJ = - 40 °C
Maximum DC gate current required to trigger
UNITS
Maximum gate current/voltage not to
trigger is the maximum value which
will not trigger any unit with rated
VDRM anode to cathode applied
TJ = TJ maximum
6
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction
temperature range
TEST CONDITIONS
TJ
- 40 to 125
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.30
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.1
°C
K/W
Non-lubricated threads
15.5
(137)
Lubricated threads
14
(120)
Mounting torque, ± 10 %
Approximate weight
130
Case style
See dimensions - link at the end of datasheet
N·m
(lbf · in)
g
TO-94 (TO-209AC)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.042
0.030
120°
0.050
0.052
90°
0.064
0.070
60°
0.095
0.100
30°
0.164
0.165
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94392
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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130
80RIA Series
RthJC (DC) = 0.30 K/W
120
110
Conduc tion Angle
100
30°
60°
90°
120°
90
180°
80
0
10 20
30 40
50 60 70
80 90
130
80RIA Series
RthJC (DC) = 0.30 K/W
120
110
Conduction Period
100
90
30°
80
120°
180°
DC
70
0
20
40
60
80
100
120
140
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
120
e lt
-D
K/
W
a
R
1.4
K/
W
RMSLimit
60
/W
4K
0.
70
1
=
80
A
90
W
K/
100
hS
R t
180°
120°
90°
60°
30°
110
6
0.
Maximum Average On-state Power Loss (W)
60°
90°
2K
/W
50
40
Conduction Angle
3 K/
30
20
10
W
5 K/ W
80RIA Series
TJ = 125°C
0
0
10
20
30
40
50
60
70
80
0
Average On-state Current (A)
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Maximum Average On-state Power Loss (W)
Fig. 3 - On-State Power Loss Characteristics
180
DC
180°
120°
90°
60°
30°
160
140
120
R
th
SA
100
80
=
0.
6K
/W
0.
4
K/
W
-D
e lt
a
1K
/W
RMSLimit
Conduc tion Period
60
40
80RIA Series
TJ = 125°C
20
R
1.4
K/ W
2 K/
W
3 K/ W
5 K/ W
0
0
20
40
60
80
100
120
Average On-state Current (A)
140
0
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 27-Sep-17
Document Number: 94392
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series
1800
Vishay Semiconductors
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
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At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
1600
1400
1200
1000
80RIA Series
800
1
10
100
2000
Maximum Non Repetitive Surge Current
1900
Versus Pulse Train Duration. Control
1800 Of Conduction May Not Be Maintained.
Initial TJ = 125°C
1700
No Voltage Reapplied
1600
Rated VRRM Reapplied
1500
1400
1300
1200
1100
1000
900
80RIA Series
800
700
0.01
0.1
1
Pulse Train Duration (s)
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
10000
1000
100
TJ = 25°C
TJ = 125°C
10
80RIA Series
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Instantaneous On-state Voltage (V)
1
Steady State Value
R thJC = 0.30 K/W
Transient Thermal Impedance Z
thJC
(K/ W)
Fig. 7 - On-State Voltage Drop Characteristics
(DC Operation)
0.1
0.01
80RIA Series
0.001
0.0001
0.001
0.01
0.1
1
10
Sq uare Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 27-Sep-17
Document Number: 94392
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series
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Vishay Semiconductors
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 30ohms; tr