VS-85HF40M8

VS-85HF(R) 40M8 www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 85 A FEATURES • High surge current capability • Stud cathode and stud anode version • Leaded version available • Types up to 1600 V VRRM • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-5 (DO-203AB) TYPICAL APPLICATIONS • Battery chargers PRIMARY CHARACTERISTICS IF(AV) 85 A Package DO-5 (DO-203AB) Circuit configuration Single • Converters • Power supplies • Machine tool controls • Welding MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) I2t 400 UNITS 85 A TC 140 °C 133 A 50 Hz 1700 60 Hz 1800 IF(RMS) IFSM 85HF(R) 50 Hz 14 500 60 Hz 13 500 VRRM TJ A A2s 400 V -65 to +180 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-85HF(R) VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 40 400 500 9 Revision: 11-Jan-18 Document Number: 93529 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-85HF(R) 40M8 www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current  at case temperature IF(AV) Maximum RMS forward current TEST CONDITIONS 180° conduction, half sine wave IF(RMS) t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t Maximum I2t 85HF(R) I2t for fusing t = 8.3 ms t = 10 ms t = 8.3 ms I2t for fusing Value of threshold voltage (up to 1200 V) No voltage  reapplied 100 % VRRM reapplied No voltage  reapplied UNITS 85 A 140 °C 133 A 1700 1800 A 1450 Sinusoidal half wave, initial TJ = TJ maximum 1500 14 500 13 500 100 % VRRM reapplied A2s 10 500 9400 t = 0.1 ms to 10 ms, no voltage reapplied A2s 16 000 0.68 VF(TO) Value of threshold voltage (for 1400 V, 1600 V) TJ = TJ maximum V 0.69 Value of forward slope resistance (up to 1200 V) 1.62 rf Value of forward slope resistance (for 1400 V, 1600 V) TJ = TJ maximum mW 1.75 Maximum forward voltage drop VFM Ipk = 267 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.2 V 85HF(R) UNITS -65 to +180 °C THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation 0.35 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.25 Maximum shock K/W 1500 Maximum constant vibration 50 Hz Maximum constant acceleration Stud outwards Maximum allowable mounting torque +0 %, -10 % 20 g 5000 Not lubricated thread, tighting on nut 3.4 (30) Lubricated thread, tighting on nut 2.3 (20) Not lubricated thread, tighting on hexagon 4.2 (37) Lubricated thread, tighting on hexagon 3.2 (28) Approximate weight Unleaded device Case style See dimensions - link at the end of datasheet N·m (lbf · in) 17 g 0.6 oz. DO-5 (DO-203AB) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.10 0.08 120° 0.11 0.11 90° 0.13 0.13 60° 0.17 0.17 30° 0.26 0.26 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93529 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-85HF(R) 40M8 1 80 Vishay Semiconductors Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com 85HF(R) Series 100 V to 1200 V RthJC (DC) = 0.35 K/W 1 70 Conduction Angle 1 60 1 50 30° 60° 1 40 90° 120° 180°a 1 30 0 10 20 30 40 50 60 70 80 90 100 IF(AV) - Average Forward Current (A) 180 85HF(R) Series 100 V to 1200 V RthJC (DC) = 0.35 K/W 170 Conduction Period 160 150 30° 60° 140 120° 0 60 80 100 120 140 80 100 120 140 160 180 A K/ 60 .5 =0 W W 2K R thS K/ 7 5 0. /W W K/ RMS Limit 3K /W 40 30 Conduction Angle 20 85HF(R) Tj = 180 ˚C R 50 -Δ Maximum Average Forward Power Loss (W) 40 W 1. K/ 60 20 IF(AV) - Average Forward Current (A) 1 70 DC Fig. 2 - Current Ratings Characteristics 180° 120° 90° 60° 30° 80 180° 130 Fig. 1 - Current Ratings Characteristics 90 90° 5 K/ W 10 K/W 10 0 0 10 20 30 40 50 60 70 80 90 IF(AV) - Average Forward Current (A) 20 40 Maximum Allowable Ambient Temperature (°C) Fig. 3 - Forward Power Loss Characteristics = W SA K/ 5 0. K/ 1.5 R th 7 /W K/ W W 80 K 100 0. DC 180° 120° 90° 60° 30° 1 -Δ 2K /W 60 RMS Limit R Maximum Average Forward Power Loss (W) 120 3K /W 40 Conduction Period 20 85HF(R) Tj = 180 ˚C 5 K/W 10 K/W 0 0 20 40 60 80 100 120 IF(AV) - Average Forward Current (A) 140 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient Temperature (°C) Fig. 4 - Forward Power Loss Characteristics Revision: 11-Jan-18 Document Number: 93529 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-85HF(R) 40M8 Instantaneous Forward Current (A) 1600 Vishay Semiconductors At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = Tj Max. @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1400 1200 1000 800 600 85HF(R) Series 400 1 10 10 000 Tj = 25°C Tj = Tj Max. 1000 100 85HF(R) Series up to 1200 V 10 0 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 1800 1600 1400 1200 1000 800 600 200 0.01 85HF(R) Series 0.1 2 3 4 5 6 Fig. 7 - Forward Voltage Drop Characteristics Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial Tj = Tj Max. No Voltage Reapplied Rated Vrrm Reapplied 400 1 Instantaneous Forward Voltage (V) ZthJC - Transient Thermal Impedance (K/W) Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) www.vishay.com 1 Pulse Train Duration (s) 10 Steady State Value RthJC = 0.35 K/W 1 (DC Operation) 0.1 0.01 85HF(R) Series 0.001 0.0001 0.001 0.01 0.1 1 10 t - Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current ORDERING INFORMATION TABLE Device code VS- 85 HF R 40 M8 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - 85 = standard device 3 - HF = standard diode 4 - None = stud normal polarity (cathode to stud) R = stud reverse polarity (anode to stud) 5 - Voltage code x 10 = VRRM (see Voltage Ratings table) 6 - M8 = stud base DO-5 (DO-203AB) M8 x 1.25 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95342 Revision: 11-Jan-18 Document Number: 93529 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DO-5 (DO-203AB) for 85HF(R), 86HF(R) and 88HF(R)Series DIMENSIONS FOR 85HF(R) SERIES in millimeters (inches) Ø 15.1 (0.59) 6.1/7 (0.24/0.27) 4 (0.16) 4 (0.16) MIN. 25.4 (1) MAX. 10.8 (0.42) 11.4 (0.45) 11.1 ± 0.4 (0.44 ± 0.02) 1/4" 28UNF-2A For metric devices: M8 x 1.25 M6 x 1 1.20 (0.04) 17.35 (0.68) Revision: 20-Nov-2018 Document Number: 95342 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS FOR 86HF(R) SERIES in millimeters (inches) 12.2 (0.48) MAX. Ø 7 (0.28) MAX. 134.4 (5.29) MAX. 123 (4.84) MAX. Revision: 20-Nov-2018 Document Number: 95342 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS 88HF(R) SERIES in millimeters (inches) Ø 15 (0.59) 8.3 (0.33) max. 10.8 (0.42) 11.4 (0.45) 5 (0.20) max. 4 (0.16) min. 3.8 (0.15) 11.1 ± 0.4 (0.44 ± 0.02) 25.4 (1) max. 7 (0.27) 17.35 (0.68) 2.15 (0.08) 1/4" 28 UNr - 2A Revision: 20-Nov-2018 Document Number: 95342 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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