VS-40HFL, VS-70HFL, VS-85HFL Series
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Vishay Semiconductors
Fast Recovery Diodes
(Stud Version), 40 A, 70 A, 85 A
FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Stud cathode and stud anode versions
• Types up to 100 VRRM
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DO-5 (DO-203AB)
TYPICAL APPLICATIONS
• DC power supplies
• Inverters
PRIMARY CHARACTERISTICS
• Converters
IF(AV)
40 A, 70 A, 85 A
Package
DO-5 (DO-203AB)
Circuit Configuration
Single
• Choppers
• Ultrasonic systems
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IF(AV)
IFSM
I2t
TEST CONDITIONS
85HFL
UNITS
70
85
A
°C
85
85
85
50 Hz
400
700
1100
60 Hz
420
730
1151
A
50 Hz
800
2450
6050
60 Hz
730
2240
5523
11 300
34 650
85 560
I2s
Range
100 to 1000
100 to 1000
100 to 1000
V
See Recovery
Characteristics table
See Recovery
Characteristics table
See Recovery
Characteristics table
ns
-40 to +125
-40 to +125
-40 to +125
°C
trr
TJ
70HFL
40
TC maximum
I2t
VRRM
40HFL
Range
A2s
Revision: 11-Jan-18
Document Number: 93150
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VS-40HFL, VS-70HFL, VS-85HFL Series
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM
PEAK REPETITIVE
REVERSE VOLTAGE
TJ = - 40 °C TO 125 °C
V
VRSM, MAXIMUM PEAK
NON-REPETITIVE
REVERSE VOLTAGE
TJ = 25 °C TO 125 °C
V
VS-40HFL10S02, VS-40HFL10S05
100
150
VS-40HFL20S02, VS-40HFL20S05
200
300
VS-40HFL40S02, VS-40HFL40S05
400
500
VS-40HFL60S02, VS-40HFL60S05
600
700
TYPE NUMBER (1)
VS-40HFL80S05
800
900
VS-40HFL100S05
1000
1100
VS-70HFL10S02, VS-70HFL10S05
100
150
VS-70HFL20S02, VS-70HFL20S05
200
300
VS-70HFL40S02, VS-70HFL40S05
400
500
VS-70HFL60S02, VS-70HFL60S05
600
700
VS-70HFL80S05
800
900
VS-70HFL100S05
1000
1100
VS-85HFL10S02, VS-85HFL10S05
100
150
VS-85HFL20S02, VS-85HFL20S05
200
300
VS-85HFL40S02, VS-85HFL40S05
400
500
VS-85HFL60S02, VS-85HFL60S05
600
700
VS-85HFL80S05
800
900
VS-85HFL100S05
1000
1100
IFM, MAXIMUM PEAK REVERSE
CURRENT AT RATED VRRM
mA
TJ = 25 °C
TJ = 125 °C
0.1
10
0.1
15
0.1
20
Note
(1) Types listed are cathode case, for anode case add “R” to code, i.e. 40HFLR20S02, 85HFLR100S05 etc.
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at maximum case temperature
Maximum RMS forward current
Maximum peak repetitive forward current
Maximum peak, one-cycle
non-repetitive forward current
IF(AV)
TEST CONDITIONS
180° conduction, half sine wave
IF(RMS)
IFRM
Maximum
for fusing
(1)
Maximum value of threshold voltage
Maximum value of forward slope resistance
Maximum forward voltage drop
I2t
VF(TO)
rF
VFM
75
UNITS
A
°C
110
134
A
380
470
A
t = 10 ms
400
700
1100
420
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
I2t
85
63
t = 10 ms
I2t
85HFL
70
220
t = 8.3 ms
Maximum I2t for fusing
70HFL
40
Sinusoidal half wave, 30° conduction
t = 8.3 ms
IFSM
40HFL
Sinusoidal half wave, 100
% VRRM reapplied,
initial TJ = TJ maximum
730
1151
Sinusoidal half wave,
no voltage reapplied,
initial TJ = TJ maximum
475
830
1308
500
870
1369
100 % VRRM reapplied,
initial TJ = TJ maximum
800
2450
6050
730
2240
5523
1130
3460
8556
1030
3160
7810
11 300
34 650
85 560
1.081
1.085
1.128
V
6.33
3.40
2.11
m
1.95
1.85
1.75
V
No voltage reapplied,
initial TJ = TJ maximum
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = 125 °C
TJ = 25 °C, IFM = x IF(AV)
A
A2s
A2s
Note
(1) I2t for time t = I2t x t
x
x
Revision: 11-Jan-18
Document Number: 93150
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VS-40HFL, VS-70HFL, VS-85HFL Series
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Vishay Semiconductors
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Typical reverse recovery time
trr
Typical reverse recovered charge
Qrr
40HFL...
TEST CONDITIONS
70HFL...
85HFL...
S02
S05
S02
S05
S02
S05
TJ = 25 °C, IF = 1 A to VR = 30 V,
dIF/dt = 100 A/μs
70
180
60
150
50
120
TJ = 25 °C, - dIF/dt = 25 A/μs,
IFM = x rated IF(AV)
200
500
200
500
200
500
TJ = 25 °C, IF = 1 A to VR = 30 V,
dIF/dt = 100 A/μs
160
750
90
500
70
340
TJ = 25 °C, - dIF/dt = 25 A/μs,
IFM = x rated IF(AV)
240
1300
240
1300
240
1300
UNITS
ns
nC
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction operating temperature range
TEST CONDITIONS
40HFL
70HFL
TJ
-40 to 125
Storage temperature range
TStg
-40 to 150
Maximum thermal resistance,
junction to case
RthJC
DC operation
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth,
flat and greased
Maximum allowable mounting torque
(+ 0 %, - 10 %)
0.60
0.36
85HFL
UNITS
°C
0.30
K/W
0.25
Not lubricated thread, tighting on nut (1)
3.4 (30)
Lubricated thread, tighting on nut (1)
2.3 (20)
Not lubricated thread, tighting on hexagon (2)
4.2 (37)
Lubricated thread, tighting on hexagon (2)
3.2 (28)
N·m
(lbf · in)
25
Approximate weight
0.88
JEDEC®
Case style
DO-5 (DO-203AB)
Notes
(1) Recommended for pass-through holes
(2) Recommended for holed threaded heatsinks
IF
dIF
IFM
dt
t
trr
t
VR
IRRM (REC)
IRRM (REC)
Qrr
IF, IFM - Peak forward current prior to commulation
-dIF/dt - Rate of fail forward current
IRRM (REC) - Peak reverse recovery current
trr - Reverse recovery time
Qrr - Reverse recovered charge
Fig. 1 - Reverse Recovery Time Test Waveform
Revision: 11-Jan-18
Document Number: 93150
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VS-40HFL, VS-70HFL, VS-85HFL Series
Vishay Semiconductors
70
1.0
TJ = 125 °C
40HFL...
50
60
-Δ
R
-Δ
R
3-Δ
R
4-Δ
R
RMS limit
30
-Δ
R
W
K/
2.0
5
R
-Δ
40
1.5
0.
-Δ
R
3
0.
50
7
=
Ø = 180 °
120 °
90 °
60 °
30 °
0.
-Δ
R
SA
60
R th
Maximum Average Forward Power Loss (W)
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20
5 - ΔR
Ø
10
Conduction Angle
0
0
5
10
15
20
25
30
35
Average Forward Current (A)
40
10
20
30
40
70
80
90 100
Maximum Allowable Ambient Temperature (°C)
Maximum Average Forward Power Loss (W)
Fig. 2 - Current Rating Nomogram (Sinusoidal Waveforms), 40HFL Series
100
TJ = 25 °C
40HFL...
90
80
0.5
0.7 - ΔR
-Δ
R
1.0
-Δ
R
1.5
- ΔR
2.0ΔR
Ø = DC
180°
120°
60°
70
60
50
RMS limit
40
R
th
SA
=
0.3
-Δ
R
K/
W
3 - ΔR
30
4 - ΔR
20
Ø
Conduction Angle
10
0
0
10
20
30
40
50
60
Average Forward Current (A)
70
10
20
30
40
50
60
70
80
90 100
Maximum Allowable Ambient Temperature (°C)
Maximum Average Forward Power Loss (W)
Fig. 3 - Current Rating Nomogram (Rectangular Waveforms), 40HFL Series
120
70HFL...
80
Ø = 180°
120°
TJ = 125 °C
90°
60°
30°
60
RMS limit
100
0.5
0.7
1.0
1.5
-Δ
R
R
th
-Δ
R
SA
=
0.
3
-Δ
R
-Δ
R
K/
W
- ΔR
2.0 -
ΔR
3 - ΔR
40
20
4 - ΔR
Ø
Conduction Angle
0
0
10
20
30
40
50
60
70
10
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Current Rating Nomogram (Sinusoidal Waveforms), 70HFL Series
Revision: 11-Jan-18
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VS-40HFL, VS-70HFL, VS-85HFL Series
Maximum Average Forward Power Loss (W)
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Vishay Semiconductors
30
70HFL... TJ = 150 °C
R
thS
25
Ø = 180°
120°
60°
30°
20
4-
ΔR
6- Δ 5 - Δ
R
R
8-Δ
R
10 - Δ
R
DC
15
10
RMS limit
.0
ΔR
1.
0
-Δ
R
0.
5
- Δ ΔR
R
K/
W
20 - ΔR
Ø
Conduction Angle
no heatsink
0
2
=2
15- ΔR
5
0
3-
A
4
6
8
10
12
14
16
20
18
Average Forward Current (A)
10
20
30
40
50
60
70
80
90 100
Maximum Allowable Ambient Temperature (°C)
thS
Ø = 180°
120°
60°
30°
20
15
RMS limit
10
2.
0
R
-Δ
Maximum Average Forward Power Loss (W)
R
0
35
1.
5
A =
ΔR ΔR
3.0
-Δ
4R
Δ
5K/
ΔR R
W
6ΔR
8-Δ
R
10 ΔR
85HFL... TJ = 150 °C
1.
25
Maximum Average Forward Power Loss (W)
Fig. 5 - Current Rating Nomogram (Rectangular Waveforms), 70HFL Series
15 - Δ
R
5
20 - ΔR
Ø
Conduction Angle
0
0
2
4
6
8
10
12
14
16 10
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 6 - Current Rating Nomogram (Sinusoidal Waveforms), 85HFL Series
85HFL...
TJ = 150 °C
30
0.
1.
1.
5
0
-Δ
-Δ
-Δ 5-Δ
R
R
R
R
.0 ΔR
4K/W
ΔR
5ΔR
6-Δ
R
8-Δ
R
R
thS
Ø = 180°
120°
60°
30°
25
20
15
RMS limit
10
A
=3
2.0
10 - ΔR
15 - ΔR
DC
5
Ø
Conduction Angle
0
0
5
10
15
20
Average Forward Current (A)
25
10
20
30
40
50
60
70
80
90 100
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Current Rating Nomogram (Rectangular Waveforms), 85HFL Series
Revision: 11-Jan-18
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VS-40HFL, VS-70HFL, VS-85HFL Series
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TJ = 125 °C
Ø = 180°
120°
60°
30°
103
Ø = DC
180°
120°
60°
30°
Ø
102
Ø
10
102
0
103
104
40HFL...
102
TJ = 125 °C
10
TJ = 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 8 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 40HFL Series
Fig. 11 - Maximum Forward Voltage vs. Forward Current,
40HFL Series
TJ = 125 °C
Ø = 180°
120°
60°
30°
3
10
Instantaneous Forward Current (A)
70HFL...
Maximum Average Forward
Power Loss (W)
103
Average Forward Current (A)
104
Ø = DC
180°
120°
60°
30°
Ø
102
Ø
10
102
10
103
103
70HFL...
102
TJ = 125 °C
10
TJ = 25 °C
1
104
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Average Forward Current (A)
Instantaneous Forward Voltage (V)
Fig. 9 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 70HFL Series
Fig. 12 - Maximum Forward Voltage vs. Forward Current,
70HFL Series
104
85HFL... TJ = 125 °C
Maximum Average Forward
Power Loss (W)
Instantaneous Forward Current (A)
40HFL...
Ø = 180°
120°
60°
30°
103
Ø = DC
180°
120°
60°
30°
Ø
102
Ø
10
10
102
103
104
Instantaneous Forward Current (A)
Maximum Average Forward
Power Loss (W)
104
Vishay Semiconductors
103
85HFL...
102
TJ = 125 °C
10
TJ = 25 °C
1
0
1
2
3
4
Average Forward Current (A)
Instantaneous Forward Voltage (V)
Fig. 10 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 85HFL Series
Fig. 13 - Maximum Forward Voltage vs. Forward Current,
85HFL Series
Revision: 11-Jan-18
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125
125
85HFL...
Maximum Allowable Case
Temperature (°C)
Maximum Allowable Case
Temperature (°C)
40HFL...
Ø = 180°
120°
60°
30°
110
100
90
Ø = 180°
120°
90°
60°
30°
80
70
60
Ø
DC
50
110
100
Ø = 180°
120°
60°
30°
90
Ø = 180°
120°
90°
60°
30°
80
70
60
Ø
DC
50
Ø
Ø
40
40
0
10
30
20
40
50
60
0
70
60
40
20
100
80
120
140
Average Forward Current (A)
Average Forward Current (A)
Fig. 14 - Average Forward Current vs. Maximum Allowable Case
Temperature, 40HFL Series
Fig. 16 - Average Forward Current vs. Maximum Allowable Case
Temperature, 85HFL Series
Normalized Peak Half Sine Wave
Forward Current (Per Unit)
125
Maximum Allowable Case
Temperature (°C)
70HFL...
Ø = 180°
120°
60°
30°
110
100
90
Ø = 180°
120°
90°
60°
30°
80
70
60
Ø
DC
50
Ø
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
1.0
0.8
0.6
0.4
50 Hz
0.2
0
40
0
60 Hz
20
40
60
80
100
4
2
1
120
6 8 10
20
40 60
Number Of Equal Amplitude
Halfe Cycle Current Pulses (N)
Average Forward Current (A)
Fig. 17 - Maximum Non-Repetitive Surge Current
vs. Number of Current Pulses, All Series
Fig. 15 - Average Forward Current vs. Maximum Allowable Case
Temperature, 70HFL Series
Transient Thermal Impedance
Junction to Case (K/W)
1
40HFL...
70HFL...
85HFL...
10-1
10-2
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case vs. Pulse Duration, All Series
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105
40HFL...S02
40HFL...S05
600
500
400
300
Recovered Charge (nC)
Reverse Recovery Time (ns)
1000
Vishay Semiconductors
200
TJ = 25 °C
IF = 125 A
IF = 20 A
IF = 1 A
100
60
50
40
30
TJ = 125 °C
IF = 125 A
IF = 20 A
IF = 1 A
20
IF = 125 A
IF = 20 A
IF = 1 A
104
103
TJ = 125 °C
102
TJ = 25 °C
10
10
1
3
10
30
100
1
30
100
Fig. 19 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 40HFL...S02 Series
Fig. 22 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 40HFL...S05 Series
40HFL...S10
Reverse Recovery Time (ns)
40HFL...S02
Recovered Charge (nC)
10
Rate of Fall of Forward Current (A/μs)
105
IF = 125 A
IF = 20 A
IF = 1 A
104
103
TJ = 125 °C
102
TJ = 25 °C
TJ = 125 °C
IF = 125 A
IF = 20 A
IF = 1 A
6000
5000
4000
3000
2000
1000
600
500
400
300
TJ = 25 °C
IF = 125 A
IF = 20 A
IF = 1 A
200
100
10
1
3
10
30
1
100
3
10
30
100
Rate of Fall of Forward Current (A/μs)
Rate of Fall of Forward Current (A/μs)
Fig. 20 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 40HFL...S02 Series
Fig. 23 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 40HFL...Series
105
6000
5000
4000
3000
Recovered Charge (nC)
40HFL...S05
Reverse Recovery Time (ns)
3
Rate of Fall of Forward Current (A/μs)
TJ = 125 °C
IF = 125 A
IF = 20 A
IF = 1 A
2000
1000
600
500
400
300
TJ = 25 °C
IF = 125 A
IF = 20 A
IF = 1 A
200
100
40HFL...S10
104
IF = 125 A
IF = 20 A
IF = 1 A
TJ = 125 °C
103
102
TJ = 25 °C
10
1
3
10
30
100
1
3
10
30
100
Rate of Fall of Forward Current (A/μs)
Rate of Fall of Forward Current (A/μs)
Fig. 21 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 40HFL...S05 Series
Fig. 24 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 40HFL...Series
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104
70HFL...S02
70HFL...S05
500
400
300
Recovered Charge (nC)
Reverse Recovery Time (ns)
1000
Vishay Semiconductors
200
TJ = 25 °C
IF = 220 A
IF = 50 A
IF = 1 A
100
60
50
40
30
TJ = 125 °C
IF = 220 A
IF = 50 A
IF = 1 A
20
10
TJ = 125 °C
10
TJ = 25 °C
3
10
30
100
1
3
10
30
100
Rate of Fall of Forward Current (A/μs)
Rate of Fall of Forward Current (A/μs)
Fig. 25 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 70HFL...S02 Series
Fig. 28 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 70HFL...S05 Series
105
70HFL...S10
70HFL...S02
Reverse Recovery Time (ns)
Recovered Charge (nC)
102
1
1
IF = 220 A
IF = 50 A
IF = 1 A
104
103
TJ = 125 °C
2
10
TJ = 25 °C
TJ = 125 °C
IF = 220 A
IF = 50 A
IF = 1 A
6000
5000
4000
3000
2000
1000
600
500
400
300
TJ = 25 °C
IF = 220 A
IF = 50 A
IF = 1 A
200
100
10
1
3
10
30
1
100
3
10
30
100
Rate of Fall of Forward Current (A/μs)
Rate of Fall of Forward Current (A/μs)
Fig. 26 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 70HFL...S02 Series
Fig. 29 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 70HFL... Series
105
70HFL...S05
TJ = 125 °C
IF = 220 A
IF = 50 A
IF = 1 A
4000
3000
2000
Recovered Charge (nC)
Reverse Recovery Time (ns)
IF = 220 A
IF = 50 A
IF = 1 A
103
1000
600
500
400
300
TJ = 25 °C
IF = 220 A
IF = 50 A
IF = 1 A
200
100
1
3
70HFL...S10
IF = 220 A
IF = 50 A
IF = 1 A
104
TJ = 125 °C
103
102
TJ = 25 °C
10
10
30
100
1
3
10
30
100
Rate of Fall of Forward Current (A/μs)
Rate of Fall of Forward Current (A/μs)
Fig. 27 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 70HFL...S05 Series
Fig. 30 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 70HFL... Series
Revision: 11-Jan-18
Document Number: 93150
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40HFL, VS-70HFL, VS-85HFL Series
www.vishay.com
105
85HFL...S02
Recovered Charge (nC)
Reverse Recovery Time ()
103
Vishay Semiconductors
102
TJ = 25 °C
IF = 265 A
IF = 50 A
IF = 1 A
TJ = 125 °C
IF = 265 A
IF = 50 A
IF = 1 A
1
IF = 265 A
IF = 50 A
IF = 1 A
104
°C
25
TJ
=1
102
C
5°
TJ
4
10
40
=2
1
100
104
103
Reverse Recovery Time (ns)
85HFL...S02
IF = 265 A
IF = 50 A
IF = 1 A
103
102
TJ
=
5
12
10
TJ
=
25
°C
°C
100
10
Rate of Fall of Forward Current (A/μs)
Fig. 34 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 85HFL...S05 Series
Rate of Fall of Forward Current (A/μs)
Fig. 31 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 85HFL...S02 Series
Recovered Charge (nC)
103
10
10
1
85HFL...S10
TJ = 125 °C
IF = 265 A
IF = 50 A
IF = 1 A
102
TJ = 25 °C
IF = 265 A
IF = 50 A
IF = 1 A
10
1
100
10
1
104
105
Recovered Charge (nC)
85HFL...S05
TJ = 125 °C
IF = 265 A
IF = 50 A
IF = 1 A
103
TJ = 25 °C
IF = 265 A
IF = 50 A
IF = 1 A
102
4
10
40
100
Rate of Fall of Forward Current (A/μs)
Fig. 35 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 85HFL... Series
Rate of Fall of Forward Current (A/μs)
Fig. 32 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 85HFL...S02 Series
Reverse Recovery Time (ns)
85HFL...S05
85HFL...S10
103
IF = 265 A
IF = 50 A
IF = 1 A
104
=2
C
5°
TJ
C
5°
102
TJ
=2
10
1
4
10
40
100
Rate of Fall of Forward Current (A/μs)
Fig. 33 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 85HFL...S05 Series
1
10
100
Rate of Fall of Forward Current (A/μs)
Fig. 36 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 85HFL... Series
Revision: 11-Jan-18
Document Number: 93150
10
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40HFL, VS-70HFL, VS-85HFL Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
70
HFL
R
1
2
3
4
100 S02
5
6
M
7
1
-
Vishay Semiconductors product
2
-
• 70 = standard device (current rating: 40 = 40 A, 70 = 70 A, 85 = 85 A)
• 71 = not isolated lead
• 72, 87 = isolated lead with silicone sleeve
(red = reverse polarity)
(blue = normal polarity)
3
-
4
-
HFL = fast recovery diode
• None = stud normal polarity (cathode to stud)
• R = stud reverse polarity (anode to stud)
5
-
Voltage code x 10 = VRRM (see “Voltage Ratings” table)
6
-
Refer to “Recovery Characteristics” table
7
-
• None = stud base DO-5 (DO-203AB) 1/4" 28UNF-2A
• M = stud base DO-5 (DO-203AB) M6 x 1
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95312
Revision: 11-Jan-18
Document Number: 93150
11
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-203AB (DO-5) for 40HFL, 70HFL and 85HFL
DIMENSIONS FOR 40HFL/70HFL in millimeters (inches)
Ø 14.6 (0.57)
6.1/7
(0.24/0.27)
4 (0.16)
4 (0.16) MIN.
25.4 (1) MAX.
10.8 (0.42)
11.4 (0.45)
11.1 ± 0.4
(0.44 ± 0.02)
1/4" 28UNF-2A
for metric devices: M6 x 1
1.20 (0.04)
Document Number: 95312
Revision: 29-Sep-08
17.40 (0.68)
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Outline Dimensions
Vishay Semiconductors
DO-203AB (DO-5) for
40HFL, 70HFL and 85HFL
DIMENSIONS FOR 85HFL in millimeters (inches)
Ø 15 (0.59)
6.1/7
(0.24/0.27)
4 (0.16)
4 (0.16) MIN.
25.4 (1) MAX.
10.8 (0.42)
11.4 (0.45)
11.1 ± 0.4
(0.44 ± 0.02)
1/4" 28UNF-2A
for metric devices: M6 x 1
1.20 (0.04)
www.vishay.com
2
17.35 (0.68)
For technical questions, contact: indmodules@vishay.com
Document Number: 95312
Revision: 29-Sep-08
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Revision: 09-Jul-2021
1
Document Number: 91000
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