8AF Series
Vishay Semiconductors
Pressfit Rectifier Diodes, 50 A
FEATURES
• Convenient pressfit package
• Available with and without leads
• High surge capabilities
• Fully characterized bulletin
• RoHS compliant
• Designed and qualified for industrial level
B-47
PRODUCT SUMMARY
IF(AV)
50 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
VALUES
UNITS
50
A
TC
150
°C
79
A
50 Hz
714
60 Hz
747
50 Hz
2546
60 Hz
2324
IF(RMS)
IFSM
I2 t
I2t
A
25 455
VRRM
Range
TJ
A2 s
A2s
50 to 400
V
- 65 to 195
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
05
50
75
7
1
100
150
7
2
200
300
5
4
400
500
5
8AF
Document Number: 93530
Revision: 17-Jun-08
For technical questions, contact: ind-modules@vishay.com
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8AF Series
Pressfit Rectifier Diodes, 50 A
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
IF(AV)
Maximum RMS forward current
TEST CONDITIONS
180° conduction, half sine wave
VALUES
UNITS
50
A
150
°C
79
A
IF(RMS)
t = 10 ms
Maximum peak, one cycle forward,
non-repetitive surge current
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
714
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
747
Sinusoidal half wave,
initial TJ =
TJ maximum
628
2546
2324
1643
t = 0.1 to 10 ms, no voltage reapplied
A2s
25 455
Low level value of threshold voltage
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.60
VF(TO)2
( x IF(AV) < I < 20 x x IF(AV)), TJ = TJ maximum
0.68
Low level value of forward slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
6.66
High level value of forward slope resistance
rf2
( x IF(AV) < I < 20 x x IF(AV)), TJ = TJ maximum
6.25
TJ = 25 °C, IFM = x rated IF(AV)
1.45
VFM
A2s
1800
100 % VRRM
reapplied
High level value of threshold voltage
Maximum forward voltage drop
A
600
V
m
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
and storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
SYMBOL
TEST CONDITIONS
TJ, TStg
RthJC
DC operation
UNITS
- 65 to 195
°C
0.60
K/W
RthCS
As per mounting details, see note
(1)
Approximate weight
Case style
VALUES
See dimensions - link at the end of datasheet
0.50
10
g
0.36
oz.
B-47
Note
(1) Mounting: A 12.6 ± 0.02 mm (0.496 to 0.497") diameter hole should be drilled in heatsink, the leading edge chamfered to 0.038 mm
(0.015") x 45°. The autodiode should then be press fitted, ensuring that the sides of the autodiode are kept parallel to the sides of the hole.
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93530
Revision: 17-Jun-08
8AF Series
Pressfit Rectifier Diodes, 50 A
Vishay Semiconductors
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.042
0.026
120°
0.045
0.043
90°
0.06
0.06
60°
0.10
0.10
30°
0.15
0.15
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
200
8AF Series
RthJC (DC) = 0.6 K/W
190
180
Conduction Angle
170
160
150
90°
30°
60°
120°
180°
140
0
200
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
8AF Series
RthJC (DC) = 0.6 K/W
190
180
Conduction Period
170
160
150
30°
90°
60°
120°
20
30
180°
DC
140
5 10 15 20 25 30 35 40 45 50 55
0
10
40
50
60
70
80
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
80
R
180°
120°
90°
60°
30°
70
60
1.5
K/
W
2K
/W
SA
th
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
=
1
K/
W
RMS Limit
50
-D
el
ta
R
3K
/W
40
5K
/W
30
Conduction Angle
10 K/W
20
8AF Series
TJ = 195°C
10
15 K/W
0
0
10
20
30
40
50
Average Forward Current (A)
60
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Document Number: 93530
Revision: 17-Jun-08
For technical questions, contact: ind-modules@vishay.com
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8AF Series
Pressfit Rectifier Diodes, 50 A
90
R
DC
180°
120°
90°
60°
30°
80
70
60
SA
th
Maximum Average Forward Power Loss (W)
Vishay Semiconductors
1.5
K/
W
2K
/W
=
1K
/W
-D
elt
a
R
RMS Limit
50
3K
/W
40
5K
/W
30
Conduction Period
10 K/W
20
8AF Series
TJ = 195°C
10
15 K/W
0
0
10
20
30
40
50
60
Average Forward Current (A)
70
80
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
650
600
550
500
450
400
350
300
250
8AF Series
200
1
100
10
TJ = 25°C
TJ = 195°C
10
0
100
1
2
3
4
5
6
7
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
750
Peak Half Sine Wave Forward Current (A)
8AF Series
1
150
700
650
600
550
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 195 °C
No Voltage Reapplied
Rated VRRM Reapplied
500
450
400
350
300
250
200
150
0.01
8AF Series
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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Transient Thermal Impedance Z thJC (K/W)
Peak Half Sine Wave Forward Current (A)
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
Initial TJ = 195°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Instantaneous Forward Current (A)
1000
700
1
Steady State Value
(DC Operation)
0.1
8AF Series
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
For technical questions, contact: ind-modules@vishay.com
Document Number: 93530
Revision: 17-Jun-08
8AF Series
Pressfit Rectifier Diodes, 50 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
8AF
4
N
LV
1
2
3
4
1
-
Essential part number
2
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
3
-
N = Normal polarity (cathode to case)
R = Reverse polarity (anode to case)
4
-
PP = Without lead
LH = Horizontal lead
LV = Vertical lead
LINKS TO RELATED DOCUMENTS
Dimensions
Document Number: 93530
Revision: 17-Jun-08
http://www.vishay.com/doc?95330
For technical questions, contact: ind-modules@vishay.com
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Outline Dimensions
Vishay Semiconductors
B-47
DIMENSIONS in millimeters (inches)
15.8 (0.62)
12.5 (0.49)
0.9 (0.03)
7 (0.28)
R 0.4 (0.02)
2.4 (0.09)
16.5 (0.65)
5 (0.20)
22.5 (0.89)
0.5 (0.02)
6 (0.24)
Ø 12.77/13.27
(Ø 0.50/0.52)
Document Number: 95330
Revision: 04-Jul-08
For technical questions, contact: indmodules@vishay.com
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Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000