VS-8CSH02HM3
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Vishay Semiconductors
Hyperfast Rectifier, 2 x 4 A FRED Pt®
FEATURES
eSMP® Series
• Hyperfast recovery time, reduced Qrr, and
soft recovery
K
K
Anode 1
• 175 °C maximum
temperature
Cathode
Anode 2
• Specified for output and snubber operation
1
operating
junction
• Low forward voltage drop
2
• Low leakage current
SMPC (TO-277A)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
LINKS TO ADDITIONAL RESOURCES
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3D 3D
3D Models
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
PRIMARY CHARACTERISTICS
IF(AV)
2x4A
VR
200 V
VF at IF
0.72 V
trr (typ.)
25 ns
TJ max.
175 °C
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
Package
SMPC (TO-277A)
Circuit configuration
Common cathode
These devices are intended for use in snubber, boost,
lighting, piezo-injection, as high frequency rectifiers, and
freewheeling diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
MECHANICAL DATA
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Terminals:
J-STD-002
matte
tin
plated
leads,
solderable
per
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
TEST CONDITIONS
VRRM
per device
per diode
per device
per diode
Operating junction and storage temperatures
IF(AV)
IFSM
TJ, TStg
TSp = 160 °C
TJ = 25 °C
VALUES
UNITS
200
V
8
4
130
A
70
-55 to +175
°C
Revision: 13-Jan-2021
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Breakdown voltage, blocking voltage
VBR, VR
Forward voltage, per diode
VF
Reverse leakage current, per diode
IR
Junction capacitance
CT
TEST CONDITIONS
MIN.
TYP.
MAX.
200
-
-
IF = 4 A
-
0.89
0.95
IF = 4 A, TJ = 150 °C
-
0.72
0.78
IR = 100 μA
UNITS
V
VR = VR rated
-
-
2
TJ = 150 °C, VR = VR rated
-
6
80
VR = 200 V
-
17
-
pF
UNITS
μA
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
25
-
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
-
-
25
TJ = 25 °C
-
18
-
TJ = 125 °C
ns
-
27
-
-
2
-
-
3.6
-
TJ = 25 °C
-
18
-
TJ = 125 °C
-
50
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-55
-
175
°C
Thermal resistance, junction to mount,
per leg
RthJM
-
2.5
3.5
°C/W
Thermal resistance, junction to ambient,
per leg
RthJA
-
80
-
°C/W
Peak recovery current
IRRM
Reverse recovery charge
Qrr
IF = 4 A
dIF/dt = 200 A/μs
VR = 160 V
TJ = 25 °C
TJ = 125 °C
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature
range
TEST CONDITIONS
Approximate weight
g
oz.
Case style SMPC (TO-277A)
QCH2
100
100
175 °C
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Marking device
0.1
0.0035
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
TJ =-40 °C
0.1
10
150 °C
1
125 °C
0.1
0.01
25 °C
0.001
0.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
50
100
150
200
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
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100
5
Average Power Loss (W)
CT - Junction Capacitance (pF)
RMS limit
4
3
2
1
10
0
0
50
100
150
200
0
1
2
3
4
5
6
VR - Reverse Voltage (V)
IF(AV) - Average Forward Current (A)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 5 - Forward Power Loss Characteristics
180
35
30
175
25
125 °C
DC
170
trr (ns)
Allowable Case Temperature (°C)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
165
20
15
Square wave (D = 0.50)
80 % rated VR applied
25 °C
160
10
IF = 4 A
See note (1)
155
5
0
1
2
3
4
5
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/μs)
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
80
125 °C
Qrr (nC)
60
40
25 °C
20
IF = 4 A
0
100
1000
dIF/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 13-Jan-2021
Document Number: 94989
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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ZthJC - Thermal Impedance (°C/W)
10
Typical, junction to case
Steady state value
1
Single pulse
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 8 - Typical Transient Thermal Impedance, Junction to Case
ZthJA - Thermal Impedance (°C/W)
100
Steady state value
Typical, junction to ambient
10
1
Single pulse
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 9 - Typical Transient Thermal Impedance, Junction to Ambient
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 13-Jan-2021
Document Number: 94989
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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ORDERING INFORMATION TABLE
Device code
VS-
8
C
S
H
02
H
M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (8 = 8 A)
3
-
Circuit configuration:
C = common cathode
4
-
S = SMPC package
5
-
Process type,
6
-
Voltage code (02 = 200 V)
7
-
H = AEC-Q101 qualified
8
-
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
H = hyper fast recovery
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER REEL
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-8CSH02HM3/86A
1500
1500
7" diameter plastic tape and reel
VS-8CSH02HM3/87A
6500
6500
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95570
Part marking information
www.vishay.com/doc?95565
Packaging information
www.vishay.com/doc?88869
SPICE model
www.vishay.com/doc?96095
Revision: 13-Jan-2021
Document Number: 94989
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
SMPC (TO-277A)
DIMENSIONS in inches (millimeters)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC® TO-277A
Revision: 16-Feb-2022
Document Number: 95570
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