VS-8CWH02FNHM3

VS-8CWH02FNHM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 4 A FRED Pt® FEATURES Base common cathode 2 • Hyperfast recovery time • 175 °C max. operating junction temperature • Output rectification freewheeling • Low forward voltage drop reduced Qrr and soft recovery 2 3 2 1 1 DPAK (TO-252AA) Common Anode cathode 3 • Low leakage current Anode • AEC-Q101 qualified • Meets JESD 201 class 1A whisker test • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 2x4A VR 200 V VF at IF 0.95 V DESCRIPTION / APPLICATIONS trr (typ.) 23 ns TJ max. 175 °C Package DPAK (TO-252AA) Circuit configuration Common cathode State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 200 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 164 °C 8 Non-repetitive peak surge current per leg IFSM TJ = 25 °C 80 Operating junction and storage temperatures TJ, TStg A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage per leg Reverse leakage current per leg SYMBOL VBR, VR VF IR TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 4 A - 0.87 0.95 IF = 8 A - 0.95 1.10 IF = 4 A, TJ = 150 °C - 0.71 0.80 IF = 8 A, TJ = 150 °C - 0.8 1.0 VR = VR rated - - 4 TJ = 125 °C, VR = VR rated - - 40 TJ = 150 °C, VR = VR rated - - 80 IR = 100 μA UNITS V μA Junction capacitance per leg CT VR = 200 V - 17 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH Revision: 19-Feb-2021 Document Number: 94741 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8CWH02FNHM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current MIN. TYP. MAX. - 23 27 TJ = 25 °C - 20 - TJ = 125 °C - 27 - - 2 - - 3.4 - TJ = 25 °C IRRM Reverse recovery charge TEST CONDITIONS IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V TJ = 125 °C Qrr IF = 4 A dIF/dt = 200 A/μs VR = 160 V UNITS ns A TJ = 25 °C - 20 - TJ = 125 °C - 46 - MIN. TYP. MAX. UNITS -65 - 175 °C nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance, junction to case per leg per device TEST CONDITIONS TJ, TStg RthJC Approximate weight Marking device Case style DPAK (TO-252AA) - 2.7 3.2 - 1.35 1.6 °C/W 0.3 g 0.01 oz. 8CWH02FNH Revision: 19-Feb-2021 Document Number: 94741 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8CWH02FNHM3 www.vishay.com Vishay Semiconductors 100 10 Reverse Current - I R (μA) Tj = 175°C Tj = 175°C 10 Tj = 150°C Tj = 125°C 1 Tj = 100°C 0.1 Tj = 75°C 0.01 Tj = 50°C Tj = 25°C 0.001 0.0001 50 100 150 200 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 100 1 Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 100 Tj = 125°C Tj = 25°C 0.1 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 50 Forward Voltage Drop - VF (V) 100 150 200 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics Thermal Impedance Z thJC (°C/W) 10 D = 0.5 1 D = 02 D = 0.1 D = 0.05 D = 0.02 Single Pulse (Thermal Resistance) D = 0.01 0.1 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 19-Feb-2021 Document Number: 94741 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8CWH02FNHM3 www.vishay.com Vishay Semiconductors 180 35 175 30 170 25 trr ( nC ) Allowable Case Temperature (°C) 40 DC 165 Square wave (D=0.50) rated Vr applied 160 4A, Tj = 125°C 20 15 4A, Tj = 25°C 155 10 see note (1) 150 5 0 1 2 3 4 5 6 Average Forward Current - IF(AV)(A) 0 100 1000 di F /dt (A/μs ) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 70 60 RMS Limit 4 50 3 Qrr ( nC ) Average Power Loss ( Watts ) 5 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 2 1 4A, Tj = 125°C 40 30 4A, Tj = 25°C 20 DC 10 0 0 1 2 3 4 5 6 Average Forward Current - IF(AV)(A) 0 100 1000 di F /dt (A/μs ) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR (1) Revision: 19-Feb-2021 Document Number: 94741 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8CWH02FNHM3 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 19-Feb-2021 Document Number: 94741 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8CWH02FNHM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 8 C W H 02 FN TRL H M3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Current rating (8 = 8 A) 3 - Circuit configuration: 4 - 5 - H = Hyperfast recovery 6 - Voltage rating (02 = 200 V) 7 - FN = TO-252AA 8 - None = Tube C = Common cathode Package identifier: W = D-PAK TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - 10 - H = AEC-Q101 qualified Environmental digit: M3 = Halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 75 3000 Antistatic plastic tube VS-8CWH02FNTRHM3 2000 2000 13" diameter reel VS-8CWH02FNTRRHM3 3000 3000 13" diameter reel VS-8CWH02FNTRLHM3 3000 3000 13" diameter reel VS-8CWH02FNHM3 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95519 Part marking information www.vishay.com/doc?95518 Packaging information www.vishay.com/doc?95033 Revision: 19-Feb-2021 Document Number: 94741 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DPAK (TO-252AA) DIMENSIONS in millimeters and inches Pad layout E A 0.265 (6.74) min. b3 E1 c2 L3 4 4 Seating plane D 1 2 L5 0.245 (6.23) min. H L4 3 D1 3 1 2 0.488 (12.40) 0.409 (10.40) Detail “C” b2 0.089 (2.28) min. c b e L1 e1 Lead tip 0.06 (1.524) min. Detail “C” Gauge plane L2 0.093 (2.38) 0.085 (2.18) A1 SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 L1 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 3 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 5 D1 5.21 - 0.205 - 3 E 6.35 6.73 0.250 0.265 5 E1 4.32 - 0.170 - 3 2.74 BSC L2 L3 c2 2.29 BSC INCHES MIN. 0.51 BSC 0.89 1.27 NOTES 0.090 BSC 0.108 REF. 0.020 BSC 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (5) Outline conforms to JEDEC® outline TO-252AA Revision: 06-Jun-17 Document Number: 95519 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000