VS-8DKH02-M3
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Vishay Semiconductors
Hyperfast Rectifier, 2 x 4 A FRED Pt®
FEATURES
1
2
• Hyperfast recovery time, reduced Qrr, and soft
recovery
3
4
8
• 175 °C maximum operating junction temperature
• Specific for output and snubber operation
7
6
• Low forward voltage drop
5
• Low leakage current
FlatPAK 5 x 6
• Meets MSL level 1 per J-STD-020, LF maximum peak
of 260 °C
1, 2
7, 8
3, 4
5, 6
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
LINKS TO ADDITIONAL RESOURCES
3D 3D
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
3D Models
PRIMARY CHARACTERISTICS
IF(AV)
2x4A
VR
200 V
VF at IF
0.7 V
trr (typ.)
25 ns
These devices are intended for use in snubber, boost,
piezo-injection, as high frequency rectifiers, and
freewheeling diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
TJ max.
175 °C
Package
FlatPAK 5 x 6
Circuit configuration
Separated cathode
MECHANICAL DATA
Case: FlatPAK 5 x 6
Molding compound meets UL 94 V-0 flammability rating
Halogen-free, RoHS-compliant
Terminals: matte tin plated leads, solderable per
J-STD-002, meets JESD 201 class 2 whisker test
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
TEST CONDITIONS
VRRM
per device
per device
per diode
Operating junction and storage temperatures
IF(AV)
IFSM
VALUES
UNITS
200
V
TSolderpad = 170 °C, DC
8
TSolderpad = 169 °C, D = 0.5
A
173
TJ = 25 °C, 10 ms sinusoidal pulse
87
TJ, TStg
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
SYMBOL
VBR, VR
Forward voltage, per diode
VF
Reverse leakage current, per diode
IR
Junction capacitance
CT
TEST CONDITIONS
MIN.
TYP.
MAX.
200
-
-
IF = 4 A
-
0.87
0.96
IF = 4 A, TJ = 150 °C
-
0.7
0.78
VR = VR rated
-
-
2
TJ = 150 °C, VR = VR rated
-
7
80
VR = 200 V
-
19
-
IR = 100 μA
UNITS
V
μA
pF
Revision: 29-Jan-2021
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
trr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
20
-
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
-
-
25
TJ = 25 °C
-
17
-
TJ = 125 °C
Peak recovery current
Reverse recovery charge
IRRM
Qrr
UNITS
ns
-
29
-
-
2.1
-
-
4
-
TJ = 25 °C
-
18
-
TJ = 125 °C
-
60
-
MIN.
TYP.
MAX.
UNITS
°C
TJ = 25 °C
TJ = 125 °C
IF = 4 A
dIF/dt = 200 A/μs
VR = 160 V
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
TJ, TStg
-55
-
175
Thermal resistance, junction to ambient, per diode
RthJA (1)(2)
-
89
103
RthJM (3)
-
1.8
2.1
Thermal resistance, junction to mount, per diode
°C/W
Notes
(1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/ R
D
J
thJA
(2) Free air, mounted or recommended copper pad area; thermal resistance R
thJA - junction to ambient
(3) Mounted on infinite heatsink
Revision: 29-Jan-2021
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VS-8DKH02-M3
Vishay Semiconductors
100
100
TJ = 175 °C
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
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TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 25 °C
TJ = -40 °C
0.1
10
TJ = 150 °C
1
TJ = 125 °C
0.1
0.01
TJ = 25 °C
0.001
0.0001
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
50
100
150
200
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
100
10
0
50
100
150
200
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Zth - Thermal Impedance (°C/W)
1000
Junction to ambient
100
10
Junction to case
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
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40
180
35
160
Tc = 170 °C
RthJC = 1.8 °C/W
140
30
125 °C
120
trr (ns)
Allowable Case Temperature (°C)
200
100
80
60
25
20
25 °C
15
Tc = 28 °C
RthJA = 89 °C/W
40
10
20
0
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
100
5
90
RMS limit
4
80
3.5
70
3
60
2.5
Qrr (nC)
Average Power Loss (W)
4.5
D = 0.01
D = 0.05
D = 0.1
D = 0.2
D = 0.5
2
1.5
1
125 °C
50
25 °C
40
30
20
DC
10
0.5
0
0
0
1
2
3
4
5
100
6
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 29-Jan-2021
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ORDERING INFORMATION TABLE
Device code
VS-
8
D
K
H
02
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (8 = 8 A)
3
-
Circuit configuration:
D = separated cathode
4
-
K = FlatPAK package
5
-
Process type,
6
-
Voltage code (02 = 200 V)
8
-
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
H = hyper fast recovery
ORDERING INFORMATION (example)
PREFERRED P/N
UNIT WEIGHT
(g)
PREFERRED PACKAGE CODE
BASE QUANTITY
VS-8DKH02-M3/H
0.10
H
1500
7"diameter plastic tape and reel
VS-8DKH02-M3/I
0.10
I
6000
13"diameter plastic tape and reel
PACKAGING DESCRIPTION
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96056
Part marking information
www.vishay.com/doc?96059
Packaging information
www.vishay.com/doc?88869
Revision: 29-Jan-2021
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Outline Dimensions
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FlatPAK 5 x 6 (Dual)
DIMENSIONS in inches (millimeters)
4 x L2
D
D1
6xe
5
6
7
8
E2
(d1)
E1
E
8xb
5
M
6
2 x b1
7
(E3)
8
F2
F1
F1
F2
4
3
4
Top View
2
1
D3
2 x D4
4 x L1
2
(8 x a)
1
3
(K)
(2 x d2)
D2
Bottom View
0.180 (4.56)
0.022 (0.56)
Side View
0.055 (1.40)
0.191 (4.84)
A
c
(8 x Θ)
0.259 (6.59)
0.082 (2.08)
0.030 (0.75)
0.039 (1.00)
0.219 (5.55)
DIM.
0.050 (1.27)
0.030 (0.75)
PCB Footprint
INCHES
MILLIMETERS
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.035
0.039
0.043
0.89
0.99
1.09
(a)
-
0.006
-
-
0.15
-
b
0.013
0.017
0.020
0.32
0.43
0.52
b1
0.013
0.017
0.020
0.32
0.43
0.52
c
0.008
-
0.014
0.20
-
0.35
D
0.197
0.203
0.209
5.00
5.15
5.30
D1
0.189
0.193
0.197
4.80
4.90
5.00
D2
0.154
0.161
0.169
3.90
4.10
4.30
D3
0.020
0.024
0.031
0.50
0.60
0.80
D4
0.063
0.069
0.075
1.60
1.75
1.90
(d1)
-
0.016
-
-
0.40
-
(d2)
-
0.005
-
-
0.125
-
E
0.238
0.244
0.250
6.05
6.20
6.35
Revision: 27-Mar-18
Document Number: 96056
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Outline Dimensions
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DIM.
Vishay Semiconductors
INCHES
MILLIMETERS
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
E1
0.228
0.232
0.236
5.80
5.90
6.00
E2
0.157
0.165
0.173
4.00
4.20
4.40
(E3)
-
0.144
-
-
3.65
-
e
0.050 BSC
1.27 BSC
(K)
0.039
-
-
1.00
-
-
L1
0.019
-
0.043
0.48
-
1.10
L2
0.012
-
0.031
0.30
-
0.80
M
0.128
0.138
0.148
3.25
3.50
3.75
0°
-
10°
0°
-
10°
Notes
• Dimensioning and tolerancing per ASME Y14.5-2009
• Dimensions D1 and E1 do not include mold flash or gate burrs
• Dimension (XX) means reference only
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Document Number: 91000