VS-8ETL06S-M3, VS-8ETL06-1-M3
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Vishay Semiconductors
Ultralow VF Hyperfast Rectifier for Discontinuous Mode PFC,
8 A FRED Pt®
FEATURES
• Benchmark ultralow forward voltage drop
• Hyperfast recovery time
• Low leakage current
2
1
• 175 °C operating junction temperature
1
3
D2PAK
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
2
(TO-263AB)
TO-262AA
3
Base
cathode
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
DESCRIPTION
3
1
3
Anode
1
N/C
State of the art, ultralow VF, soft-switching hyperfast
rectifiers optimized for discontinuous (critical) mode (DCM)
power factor correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
N/C
Anode
VS-8ETL06-1-M3
VS-8ETL06S-M3
PRIMARY CHARACTERISTICS
IF(AV)
8A
VR
600 V
VF at IF
0.81 V
trr typ.
60 ns
APPLICATIONS
TJ max.
175 °C
Package
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Single
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
600
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 160 °C
Non-repetitive peak surge current
IFSM
TJ = 25 °C
Peak repetitive forward current
IFM
16
TJ, TStg
-65 to +175
Operating junction and storage temperatures
8
A
175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
IR = 100 μA
IF = 8 A
MIN.
TYP.
MAX.
600
-
-
-
0.96
1.05
0.86
IF = 8 A, TJ = 150 °C
-
0.81
VR = VR rated
-
0.05
5
TJ = 150 °C, VR = VR rated
-
20
100
UNITS
V
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
17
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
-
nH
μA
Revision: 24-Oct-17
Document Number: 96240
1
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
MIN.
TYP.
MAX.
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
TEST CONDITIONS
-
60
100
IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V
-
150
250
TJ = 25 °C
-
170
-
TJ = 125 °C
UNITS
ns
-
250
-
-
15
-
-
20
-
TJ = 25 °C
-
1.3
-
TJ = 125 °C
-
2.6
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
-
1.4
2
Thermal resistance,
junction to ambient per leg
RthJA
Typical socket mount
-
-
70
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth, and
greased
-
0.5
-
-
2.0
-
-
0.07
-
oz.
-
12
(10)
kgf · cm
(lbf · in)
Peak recovery current
IRRM
Reverse recovery charge
Qrr
TJ = 25 °C
TJ = 125 °C
IF = 8 A
dIF/dt = 200 A/μs
VR = 390 V
A
μC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
Weight
6.0
(5.0)
Mounting torque
Marking device
Case style D2PAK (TO-263AB)
8ETL06S
Case style TO-262
8ETL06-1
°C/W
g
100
100
IR - Reverse Current (µA)
IF - Instantaneous Forward
Current (A)
TJ = 175 °C
10
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
1
0.1
0.4
0.8
1.2
1.6
2.0
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
TJ = 75 °C
0.1
TJ = 50 °C
0.01
0.001
100
TJ = 25 °C
200
300
400
500
600
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 24-Oct-17
Document Number: 96240
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
CT - Junction Capacitance (pF)
100
TJ = 25 °C
10
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.0001
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
12
RMS limit
175
Average Power Loss (W)
Allowable Case Temperature (°C)
180
170
165
DC
160
Square wave (D = 0.50)
Rated VR applied
155
10
8
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
6
4
2
DC
See note (1)
150
0
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Revision: 24-Oct-17
Document Number: 96240
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VS-8ETL06S-M3, VS-8ETL06-1-M3
www.vishay.com
Vishay Semiconductors
450
5000
VR = 390 V
TJ = 125 °C
TJ = 25 °C
400
350
4500
4000
3500
Qrr (nC)
trr (ns)
300
250
200
3000
2500
2000
150
1500
100
50
IF = 16 A
IF = 8 A
IF = 16 A
IF = 8 A
VR = 390 V
TJ = 125 °C
TJ = 25 °C
1000
0
100
500
100
1000
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
(1)
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 24-Oct-17
Document Number: 96240
4
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8ETL06S-M3, VS-8ETL06-1-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
8
E
T
L
06
S
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (8 A)
3
-
E = single
4
-
T = TO-220, D2PAK (TO-263AB)
5
-
L = ultralow VF hyperfast recovery
6
-
Voltage rating (06 = 600 V)
7
-
S = D2PAK (TO-263AB)
TRL -M3
8
9
-1 = TO-262AA
8
-
None = tube (50 pieces)
TRL = tape and reel (left oriented, for D2PAK (TO-263AB) package)
TRR = tape and reel (right oriented, for D2PAK (TO-263AB) package)
9
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
D2PAK
(TO-263AB)
www.vishay.com/doc?96164
TO-262AA
www.vishay.com/doc?96165
D2PAK (TO-263AB)
www.vishay.com/doc?95444
TO-262AA
www.vishay.com/doc?95443
Packaging information
www.vishay.com/doc?96424
SPICE model
www.vishay.com/doc?96055
Revision: 24-Oct-17
Document Number: 96240
5
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
C
2xb
2.64 (0.103)
2.41 (0.096)
(3)
E1
c
View A - A
± 0.004 M B
0.010 M A M B
2x e
Plating
Base
Metal
(4)
b1, b3
H
Gauge
plane
L
Seating
plane
L3
A1
Lead tip
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
c1 (4)
(c)
B
0° to 8°
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
0.110
L
1.78
2.79
0.070
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inches
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 13-Jul-17
Document Number: 96164
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-262AA
DIMENSIONS in millimeters and inches
Modified JEDEC® outline TO-262
(Datum A) (2) (3)
E
A
A
c2
B
E
A
(3) L1
Seating
plane
D
1
2 3
C
L2
B
D1 (3)
B
C
L (2)
A
c
3 x b2
3xb
E1
A1
(3)
Section A - A
2xe
Plating
0.010 M A M B
(4)
b1, b3
Base
metal
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Lead tip
SYMBOL
c1
c
(4)
(b, b2)
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
0.190
A
4.06
4.83
0.160
A1
2.03
3.02
0.080
0.119
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
NOTES
4
4
4
D
8.51
9.65
0.335
0.380
2
D1
6.86
8.00
0.270
0.315
3
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
e
2.54 BSC
0.100 BSC
L
13.46
14.10
0.530
0.555
L1
-
1.65
-
0.065
L2
3.56
3.71
0.140
0.146
3
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Outline conform to JEDEC® TO-262 except A1 (max.), b (min., max.), b1 (min.), b2 (max.), c (min.), c1(min.), c2 (max.), D (min.), E (max.),
L1 (max.), L2 (min., max.)
Revision: 30-Nov-17
Document Number: 96165
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