VS-8ETU04-M3
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Vishay Semiconductors
Ultrafast Rectifier, 8 A FRED Pt®
FEATURES
Base
cathode
2
2
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
1
1
Cathode
3
3
Anode
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2L TO-220AC
DESCRIPTION / APPLICATIONS
FRED Pt® series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
PRIMARY CHARACTERISTICS
IF(AV)
8A
VR
400 V
VF at IF
0.94 V
trr typ.
See Recovery table
TJ max.
175 °C
Package
2L TO-220AC
Circuit configuration
Single
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as well
as freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
400
V
Repetitive peak reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 155 °C
8
Non-repetitive peak surge current
IFSM
TC = 25 °C
100
Repetitive peak forward current
IFRM
16
TJ, TStg
-65 to +175
Operating junction and storage temperatures
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
IR = 100 μA
IF = 8 A
MIN.
TYP.
MAX.
400
-
-
-
1.19
1.3
1.0
IF = 8 A, TJ = 150 °C
-
0.94
VR = VR rated
-
0.2
10
TJ = 150 °C, VR = VR rated
-
20
500
UNITS
V
Reverse leakage current
IR
Junction capacitance
CT
VR = 400 V
-
14
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
-
nH
μA
Revision: 23-Nov-17
Document Number: 96184
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
MIN.
TYP.
MAX.
-
35
60
TJ = 25 °C
-
43
-
TJ = 125 °C
-
67
-
TJ = 25 °C
IRRM
Reverse recovery charge
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 50 A/μA, VR = 30 V
TJ = 125 °C
Qrr
IF = 8 A
dIF/dt = 200 A/μs
VR = 200 V
-
2.8
-
-
6.3
-
TJ = 25 °C
-
60
-
TJ = 125 °C
-
210
-
MIN.
TYP.
MAX.
-
1.8
2
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
Thermal resistance,
junction to case
RthJC
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
50
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth, and
greased
-
0.5
-
-
2.0
-
g
-
0.07
-
oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Weight
Mounting torque
Case style 2L TO-220AC
8ETU04
100
1000
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
Marking device
°C/W
10
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
1
TJ = 175 °C
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0.001
0.0001
0.1
0
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 23-Nov-17
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CT - Junction Capacitance (pF)
1000
100
TJ = 25 °C
10
0
100
200
300
400
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
Single pulse
(thermal resistance)
0.01
0.00001
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
0.0001
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.001
0.01
0.1
.
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
14
Average Power Loss (W)
Allowable Case Temperature (°C)
180
170
DC
160
Square wave (D = 0.50)
Rated VR applied
150
140
See note (1)
130
12
10
RMS limit
8
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
6
4
DC
2
0
0
2
4
6
8
10
12
0
2
4
6
8
10
12
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Revision: 23-Nov-17
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90
500
VR = 200 V
TJ = 125 °C
TJ = 25 °C
80
450
400
60
50
300
250
200
150
40
30
IF = 16 A
IF = 8 A
350
Qrr (nC)
trr (ns)
70
VR = 200 V
TJ = 125 °C
TJ = 25 °C
100
IF = 16 A
IF = 8 A
50
20
100
0
100
1000
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
(1)
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 23-Nov-17
Document Number: 96184
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VS-8ETU04-M3
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ORDERING INFORMATION TABLE
Device code
VS-
8
E
T
U
04
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (8 = 8 A)
3
-
E = single
4
-
Package:
T = 2L TO-220AC
4
5
-
U = ultrafast recovery
6
-
Voltage rating (04 = 400 V)
7
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-8ETU04-M3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96156
Part marking information
www.vishay.com/doc?95391
SPICE model
www.vishay.com/doc?95441
Revision: 23-Nov-17
Document Number: 96184
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Outline Dimensions
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Vishay Semiconductors
2L TO-220AC
DIMENSIONS in millimeters and inches
A
0.014 M B A M
(6)
E
A
ØP
Q
B
A
(6)
(E)
A1
Thermal pad
1
(H1)
H1
C
D2
(6) D
2
D
D
L1 (2)
C
(6)
c
2xb
D1
2 x b2
Detail B
Detail B
A2
L
E1 (6)
C
(b, b2)
Base metal
A
c1 (4)
c
2x e
Plating
View A - A
e1
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead tip
Conforms to JEDEC® outline TO-220AC
SYMBOL
A
A1
A2
b
b1
b2
b3
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.50
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.35
8.38
9.02
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.098
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.604
0.330
0.355
NOTES
4
4
4
3
SYMBOL
D2
E
E1
e
e1
H1
L
L1
ØP
Q
MILLIMETERS
MIN.
MAX.
11.68
13.30
10.11
10.51
6.86
8.89
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.91
2.60
3.00
INCHES
MIN.
MAX.
0.460
0.524
0.398
0.414
0.270
0.350
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.154
0.102
0.118
NOTES
6, 7
3, 6
6
6
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3, and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2, and E1
(7) Outline conforms to JEDEC® TO-220, except D2
Revision: 13-Jun-2019
Document Number: 96156
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