VS-8ETX06-N3

VS-8ETX06FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® FEATURES • Hyperfast recovery time • Benchmark ultra low forward voltage drop • 175 °C operating junction temperature 1 • Low leakage current 2 • Fully isolated package (VINS = 2500 VRMS) 2L TO-220 FullPAK 1 Cathode • UL pending • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 Anode DESCRIPTION / APPLICATIONS VS-8ETX06FP-N3 State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recover time, and soft recovery. PRIMARY CHARACTERISTICS IF(AV) 8A VR 600 V VF at IF 1.4 V The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. trr (typ.) 15 ns TJ max. 175 °C Package 2L TO-220 FullPAK Circuit configuration Single These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 106 °C Non-repetitive peak surge current IFSM TJ = 25 °C Repetitive peak forward current Operating junction and storage temperatures VALUES UNITS 600 V 8 A 110 IFM 18 TJ, TStg -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 8 A - 2.3 3.0 1.7 IR = 100 μA IF = 8 A, TJ = 150 °C - 1.4 VR = VR rated - 0.3 50 TJ = 150 °C, VR = VR rated - 35 500 UNITS V Reverse leakage current IR Junction capacitance CT VR = 600 V - 17 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH μA Revision: 26-Oct-17 Document Number: 96431 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8ETX06FP-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr MIN. TYP. MAX. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V TEST CONDITIONS - 15 19 IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V - 16 24 TJ = 25 °C - 17 - TJ = 125 °C UNITS ns - 40 - - 2.3 - - 4.5 - - 20 - - 100 - - 31 - - 12 - A - 195 - nC MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C Thermal resistance,  junction-to-case RthJC - 3.4 4.3 °C/W Thermal resistance,  junction-to-ambient per leg RthJA Typical socket mount - - 70 Thermal resistance,  case-to-heatsink RthCS Mounting surface, flat, smooth, and greased - 0.5 - - 2.0 - - 0.07 - oz. - 12 (10) kgf · cm (lbf · in) Peak recovery current TJ = 25 °C IRRM Reverse recovery charge TJ = 125 °C TJ = 25 °C Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge IF = 8 A dIF/dt = 200 A/μs VR = 390 V TJ = 125 °C TJ = 125 °C Qrr IF = 8 A dIF/dt = 600 A/μs VR = 390 V A nC ns THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS Weight 6.0 (5.0) Mounting torque Marking device Case style 2L TO-220 FullPAK g 8ETX06FP 1000 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) TJ = 175 °C 10 TJ = 175 °C TJ = 150 °C TJ = 25 °C 1 100 TJ = 150 °C TJ = 125 °C 10 TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0.001 0.0001 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 26-Oct-17 Document Number: 96431 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8ETX06FP-N3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 100 0 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 . 100 10 t1 - Rectangular Pulse Duration (s) 180 20 18 160 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 140 DC 120 Square wave (D = 0.50) Rated VR applied 100 80 60 See note (1) 16 RMS limit 14 12 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 10 8 6 4 DC 2 0 40 0 2 4 6 8 10 12 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 0 2 4 6 8 10 12 14 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);  PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 26-Oct-17 Document Number: 96431 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8ETX06FP-N3 www.vishay.com Vishay Semiconductors 300 50 VR = 390 V TJ = 125 °C TJ = 25 °C 250 IF = 16 A 40 200 30 Qrr (nC) trr (ns) IF = 8 A VR = 390 V TJ = 125 °C TJ = 25 °C IF = 8 A IF = 16 A 150 100 20 IF = 16 A IF = 16 A 50 IF = 8 A IF = 8 A 10 100 0 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 26-Oct-17 Document Number: 96431 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8ETX06FP-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 8 E T X 06 FP -N3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (8 = 8 A) 3 - E = single 4 - T = TO-220, D2PAK (TO-263AB) 5 - X = hyperfast rectifier 6 - Voltage rating (06 = 600 V) 7 - FP = 2L TO-220 FullPAK 8 - Environmental digit: -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-8ETX06FP-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96157 Part marking information www.vishay.com/doc?95392 Revision: 26-Oct-17 Document Number: 96431 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220 FullPAK DIMENSIONS in millimeters 3.40 Hole Ø 3.10 10.6 10.0 3.7 3.2 2.80 2.44 7.31 6.50 16.0 15.8 Mold flash bleeding 3.3 3.1 Exposed Cu 13.56 12.90 2.54 TYP. 0.61 0.38 0.9 0.7 2.85 2.65 1.20 1.47 1.30 1.05 2.54 TYP. Bottom view R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° 5° ± 0.5° Revision: 06-Jul-17 Document Number: 96157 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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