VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3
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Vishay Semiconductors
Surface Mount Fast Soft Recovery Rectifier Diode, 8 A
FEATURES
Base
cathode
+
2
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization:
for definitions of compliance
www.vishay.com/doc?99912
2
3
1
DPAK (TO-252AA)
1
Anode -
3
- Anode
please
see
APPLICATIONS
• Output rectification and freewheeling diode in inverters,
choppers and converters
PRIMARY CHARACTERISTICS
IF(AV)
8A
VR
200 V, 400 V, 600 V
• Input rectifications where severe
conducted EMI should be met
restrictions
on
VF at IF
1.2 V
IFSM
150 A
DESCRIPTION
trr
55 ns
TJ max.
150 °C
The VS-8EWF..S-M3 fast soft recovery rectifier series has
been optimized for combined short reverse recovery time,
low forward voltage drop and low leakage current.
Snap factor
0.5
Package
DPAK (TO-252AA)
Circuit configuration
Single
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
VALUES
UNITS
8
A
Sinusoidal waveform
VRRM
200 to 600
V
IFSM
150
A
VF
8 A, TJ = 25 °C
1.2
V
trr
1 A, 100 A/μs
55
ns
TJ
Range
-40 to +150
°C
IRRM
AT 150 °C
mA
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
VS-8EWF02S-M3
200
300
VS-8EWF04S-M3
400
500
VS-8EWF06S-M3
600
700
3
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
I2√t
TEST CONDITIONS
TC = 96 °C, 180° conduction half sine wave
VALUES
UNITS
8
10 ms sine pulse, rated VRRM applied
125
10 ms sine pulse, no voltage reapplied
150
10 ms sine pulse, rated VRRM applied
78
10 ms sine pulse, no voltage reapplied
110
t = 0.1 ms to 10 ms, no voltage reapplied
1100
A
A2s
A2√s
Revision: 12-Apr-2018
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VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
VFM
rt
VF(TO)
IRM
TEST CONDITIONS
8 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
VALUES
UNITS
1.2
V
16
mΩ
1.13
V
0.1
VR = Rated VRRM
TJ = 150 °C
mA
3
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
SYMBOL
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
TEST CONDITIONS
IF at 1 Apk
100 A/μs
TJ = 25 °C
IF at 8 Apk
25 A/μs
TJ = 25 °C
S
VALUES
UNITS
55
ns
IFM
trr
200
ta
2.6
A
0.25
μC
tb
t
di
dt
Qrr
Irr
0.5
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
junction to ambient (PCB mount)
SYMBOL
TEST CONDITIONS
TJ, TStg
RthJC
DC operation
VALUES
UNITS
-40 to +150
°C
2.5
°C/W
RthJA (1)
50
1
g
0.03
oz.
Approximate weight
8EWF02S
Marking device
Case style DPAK (TO-252AA)
8EWF04S
8EWF06S
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
Revision: 12-Apr-2018
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3
150
8EWF..SSeries
R thJC (DC) = 2.5 °C/ W
140
130
120
Conduction Angle
110
100
90
30°
80
60°
90°
120°
180°
70
60
0
1
2
3
4
5
6
7
8
9
Maximum Average Forward Power Loss (W)
Vishay Semiconductors
16
DC
180°
120°
90°
60°
30°
14
12
10
8
RMSLimit
6
Conduction Period
4
8EWF..SSeries
TJ = 150°C
2
0
0
4
6
8
10
12
14
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
140
150
8EWF..S Series
R thJC (DC) = 2.5 °C/ W
140
130
120
110
Conduction Period
100
30°
60°
90
90°
120°
180°
80
DC
2
4
6
8
10
120
110
100
90
80
70
60
50
VS-8EWF..S .. Series
40
30
70
0
At any rated load condition and with
rated Vrrm applied following surge.
Initial Tj = 150°C
at 60 Hz 0.0083s
at 50 Hz 0.0100s
130
12
1
14
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
12
170
Peak Half Sine Wave Forward Current (A)
Maximum Average Forward Power Loss (W)
2
Average Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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180°
120°
90°
60°
30°
10
8
RMS Limit
6
4
Conduction Angle
2
8EWF..SSeries
T J= 150°C
0
0
1
2
3
4
5
6
7
8
9
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
150
130
Maximum non-repetitive surge current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
110
90
70
50
30
10
0.01
VS-8EWF..S .. Series
0.1
1
Pulse Train Duration (s)
10
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 12-Apr-2018
Document Number: 93375
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3
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Vishay Semiconductors
1.4
10
T J= 25°C
TJ= 150°C
8EWF..SSeries
1
0.5
1
1.5
2
2.5
3
Typical Reverse Recovery Charge - Qrr (µC)
Instantaneous Forward Current (A)
100
Fig. 7 - Forward Voltage Drop Characteristics
1
10 A
0.8
8A
0.6
5A
0.4
2A
1A
0.2
0
0
40
80
120
160
200
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
2.4
8EWF..SSeries
TJ = 25 °C
0.3
I FM = 20 A
0.2
10 A
8A
5A
0.1
2A
1A
0
0
40
80
120
160
200
Typical Reverse Recovery Charge - Qrr (µC)
0.4
Typical Reverse Recovery Time - Trr (µs)
I FM = 20 A
Rate Of Fall Of Forward Current - dI/ dt (A/ µs)
Instantaneous Forward Voltage (V)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
I FM = 20 A
8EWF..SSeries
TJ = 150 °C
2.2
2
1.8
10 A
1.6
8A
1.4
1.2
5A
1
0.8
2A
0.6
0.4
1A
0.2
0
40
80
120
160
200
Rate Of Fall Of Forward Current - dI/ dt (A/ µs)
Rate Of Fall Of Forward Current - dI/ dt (A/ µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
16
8EWF..S Series
TJ = 150 °C
0.3
I FM = 20 A
0.2
10 A
8A
5A
0.1
2A
1A
0
0
40
80
120
160
200
Rate Of Fall Of Forward Current - dI/ dt (A/ µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Typical Reverse Recovery Current - Irr (A)
0.4
Typical Re verse Recovery Time - Trr (µs)
8EWF..S Series
TJ = 25 °C
1.2
8EWF..SSeries
TJ = 25 °C
14
I FM = 20 A
10 A
12
8A
10
5A
8
2A
6
1A
4
2
0
0
40
80
120
160
200
Rate Of Fall Of Forward Current - dI/ dt (A/ µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Revision: 12-Apr-2018
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3
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Vishay Semiconductors
Typical Reverse Recovery Current - Irr (A)
20
I FM = 20 A
8EWF..SSeries
TJ = 150 °C
18
16
10 A
14
8A
12
5A
10
2A
8
1A
6
4
2
0
0
40
80
120
160
200
Rate Of Fall Of Forward Current - dI/ dt (A/ µs)
Transient Thermal Impedance Z thJC (°C/ W)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
Steady State Value
(DC Operation)
1
D=
D=
D=
D=
D=
0.50
0.33
0.25
0.17
0.08
Single Pulse
8EWF..SSeries
0.1
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 12-Apr-2018
Document Number: 93375
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
8
E
W
F
06
S
TR
-M3
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Current rating (8 = 8 A)
3
-
Circuit configuration:
E = single diode
4
-
Package:
W = D-PAK
5
-
Type of silicon:
F = fast soft recovery rectifier
6
-
Voltage code x 100 = VRRM
7
-
S = surface mountable
8
-
TR = tape and reel
02 = 200 V
04 = 400 V
06 = 600 V
TRR = tape and reel (right oriented)
TRL = tape and reel (left oriented)
9
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-8EWF02S-M3
75
3000
Antistatic plastic tubes
VS-8EWF02STR-M3
2000
2000
13" diameter reel
VS-8EWF02STRL-M3
3000
3000
13" diameter reel
VS-8EWF02STRR-M3
3000
3000
13" diameter reel
75
3000
Antistatic plastic tubes
VS-8EWF04STR-M3
2000
2000
13" diameter reel
VS-8EWF04STRL-M3
3000
3000
13" diameter reel
VS-8EWF04STRR-M3
3000
3000
13" diameter reel
75
3000
Antistatic plastic tubes
VS-8EWF06STR-M3
2000
2000
13" diameter reel
VS-8EWF06STRL-M3
3000
3000
13" diameter reel
VS-8EWF06STRR-M3
3000
3000
13" diameter reel
VS-8EWF04S-M3
VS-8EWF06S-M3
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95627
Part marking information
www.vishay.com/doc?95176
Packaging information
www.vishay.com/doc?95033
SPICE model
www.vishay.com/doc?95551
Revision: 12-Apr-2018
Document Number: 93375
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Outline Dimensions
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Vishay Semiconductors
D-PAK (TO-252AA) “M”
DIMENSIONS in millimeters and inches
(5)
A
E
b3
(3)
Pad layout
C
A
0.010 M C A B
c2
A
L3 (3)
Ø1
4
Ø2
4
B
Seating
plane
H
D (5)
1
2
0.245
MIN.
(6.23)
D1
L4
3
0.265
MIN.
(6.74)
E1
3
2
0.488 (12.40)
0.409 (10.40)
1
0.089
MIN.
(2.28)
Detail “C”
(2) L5
b
2x e
A
c
b2
0.06
MIN.
(1.524)
0.010 M C A B
0.093 (2.38)
0.085 (2.18)
(L1)
Detail “C”
Rotated 90 °CW
Scale: 20:1
H (7)
Lead tip
C
Gauge
plane
L2
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
C Seating
plane
C
Ø
L
NOTES
A1
SYMBOL
MILLIMETERS
MIN.
MAX.
MAX.
A
2.18
2.39
0.086
0.094
e
A1
-
0.13
-
0.005
H
9.40
10.41
0.370
0.410
b
0.64
0.89
0.025
0.035
L
1.40
1.78
0.055
0.070
b2
0.76
1.14
0.030
0.045
L1
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
L3
0.89
1.27
0.035
0.050
c2
0.46
0.89
0.018
0.035
L4
-
1.02
-
0.040
D
5.97
6.22
0.235
0.245
5
L5
1.14
1.52
0.045
0.060
D1
5.21
-
0.205
-
3
Ø
0°
10°
0°
10°
E
6.35
6.73
0.250
0.265
5
Ø1
0°
15°
0°
15°
E1
4.32
-
0.170
-
3
Ø2
25°
35°
25°
35°
3
2.29 BSC
INCHES
MIN.
2.74 BSC
L2
0.51 BSC
NOTES
0.090 BSC
0.108 REF.
0.020 BSC
3
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC® outline TO-252AA
Revision: 24-Jun-16
Document Number: 95627
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Revision: 01-Jan-2023
1
Document Number: 91000