VS-8EWS08S-M3

VS-8EWS08S-M3, VS-8EWS12S-M3 www.vishay.com Vishay Semiconductors High Voltage Surface Mountable Input Rectifier Diode, 8 A FEATURES Base cathode + 2 • Glass passivated pellet chip junction • Meets MSL level 1, per LF maximum peak of 260 °C J-STD-020, • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 3 1 1 Anode - DPAK (TO-252AA) 3 - Anode APPLICATIONS • Input rectification • Vishay Semiconductors switches and output rectifiers which are available in identical package outlines PRIMARY CHARACTERISTICS IF(AV) 8A VR 800 V, 1200 V VF at IF 1.1 V DESCRIPTION IFSM 150 A TJ max. 150 °C Package DPAK (TO-252AA) Circuit configuration Single The VS-8EWS..S-M3 rectifier high voltage series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature. The high reverse voltage range available allows design of input stage primary rectification with outstanding voltage surge capability.  OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE NEMA FR-4 or G10 glass fabric-based epoxy with 4 oz. (140 μm) copper 1.2 1.6 Aluminum IMS, RthCA = 15 °C/W 2.5 2.8 Aluminum IMS with heatsink, RthCA = 5 °C/W 5.5 6.5 UNITS A Note • TA = 55 °C, TJ = 125 °C, footprint 300 mm2 MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VALUES UNITS 8 A VRRM 800/1200 V IFSM 150 A VF 8 A, TJ = 25 °C TJ 1.10 V -55 to +150 °C IRRM AT 150 °C mA VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-8EWS08S-M3 800 900 VS-8EWS12S-M3 1200 1300 0.5 Revision: 24-Sep-2019 Document Number: 93383 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWS08S-M3, VS-8EWS12S-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle  non-repetitive surge current SYMBOL IF(AV) IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t TEST CONDITIONS TC = 105 °C, 180° conduction half sine wave VALUES UNITS 8 A 10 ms sine pulse, rated VRRM applied 125 10 ms sine pulse, no voltage reapplied 150 10 ms sine pulse, rated VRRM applied 78 10 ms sine pulse, no voltage reapplied 110 t = 0.1 ms to 10 ms, no voltage reapplied 1100 A2s VALUES UNITS 1.1 V 20 m 0.82 V A2s ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 8 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM 0.05 mA 0.50 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage  temperature range Maximum thermal resistance, junction to case Typical thermal resistance,  junction to ambient (PCB mount) SYMBOL TEST CONDITIONS TJ, TStg RthJC DC operation UNITS -55 to +150 °C 2.5 °C/W RthJA (1) 62 1 Approximate weight Marking device VALUES g 0.03 Case style DPAK (TO-252AA) oz. 8EWS08S 8EWS12S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 Revision: 24-Sep-2019 Document Number: 93383 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWS08S-M3, VS-8EWS12S-M3 www.vishay.com 8EWS. Series RthJC (DC) = 2.5 °C/W 140 130 Ø Conduction angle 120 110 100 30° 60° 90 90° 120° Maximum Average Forward Power Loss (W) 20 150 Maximum Allowable Case Temperature (°C) Vishay Semiconductors 180° 0 2 4 12 RMS limit 10 8 Ø 6 Conduction period 4 8EWS. Series TJ = 150 °C 2 6 10 8 12 0 4 6 8 10 12 14 16 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 140 8EWS. Series RthJC (DC) = 2.5 °C/W 140 At any rated load condition and with rated Vrrm applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 130 130 Peak Half Sine Wave Forward Current (A) 120 Ø Conduction period 120 110 2 Average Forward Current (A) 150 30° 60° 100 90° 120° 180° 90 110 100 90 80 70 60 50 VS-8EWS08S .. Series 40 DC 30 0 16 2 4 6 8 10 12 14 16 12 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 160 140 10 RMS limit 8 6 Ø Conduction angle 4 8EWS. Series TJ = 150 °C 2 2 4 6 8 120 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = TJ max. No voltage reapplied Rated Vrrm reapplied 100 80 60 40 VS-8EWS08S .. Series 0 0 10 Average Forward Current (A) 180° 120° 90° 60° 30° 14 1 18 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 16 14 0 80 Maximum Average Forward Power Loss (W) DC 180° 120° 90° 60° 30° 18 10 20 0.01 0.1 1 10 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 24-Sep-2019 Document Number: 93383 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWS08S-M3, VS-8EWS12S-M3 Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 100 TJ = 25 °C TJ = 150 °C 10 8EWS. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (°C/W) 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.1 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 24-Sep-2019 Document Number: 93383 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWS08S-M3, VS-8EWS12S-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 8 E W S 12 S TR -M3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Current rating (8 = 8 A) 3 - Circuit configuration: E = single diode 4 - Package: W = D-PAK 5 - Type of silicon: S = standard recovery rectifier 6 - Voltage code x 100 = VRRM 7 - S = surface mountable 8 - TR = tape and reel 08 = 800 V 12 = 1200 V TRR = tape and reel (right oriented) TRL = tape and reel (left oriented) 9 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-8EWS08S-M3 75 3000 Antistatic plastic tubes VS-8EWS08STR-M3 2000 2000 13" diameter reel VS-8EWS08STRL-M3 3000 3000 13" diameter reel VS-8EWS08STRR-M3 3000 3000 13" diameter reel VS-8EWS12S-M3 75 3000 Antistatic plastic tubes VS-8EWS12STR-M3 2000 2000 13" diameter reel VS-8EWS12STRL-M3 3000 3000 13" diameter reel VS-8EWS12STRR-M3 3000 3000 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95627 Part marking information www.vishay.com/doc?95176 Packaging information www.vishay.com/doc?95033 SPICE model www.vishay.com/doc?96668 Revision: 24-Sep-2019 Document Number: 93383 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000