VS-8EWS12SLHM3

VS-8EWS12SLHM3

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO-252(DPAK)

  • 描述:

    DIODES - D-PAK-E3

  • 数据手册
  • 价格&库存
VS-8EWS12SLHM3 数据手册
VS-8EWS12SLHM3 www.vishay.com Vishay Semiconductors High Voltage Surface Mountable Input Rectifier Diode, 8 A FEATURES Base cathode • Glass passivated pellet chip junction • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Meets JESD 201 class 2 whisker test • Flexible solution for reliable AC power rectification • High surge, low VF rugged blocking diode for DC charging stations • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 2 3 1 DPAK (TO-252AA) 1 Anode 3 Anode PRIMARY CHARACTERISTICS APPLICATIONS IF(AV) 8A VR 1200 V • On-board and off-board EV / HEV battery chargers • Renewable energy inverters VF at IF 1.1 V IFSM 150 A DESCRIPTION TJ max. 150 °C Package DPAK (TO-252AA) Circuit configuration Single The VS-8EWS12SLHM3 rectifier high voltage series has been optimized for very low forward voltage drop, with moderate leakage. The high reverse voltage range available allows design of input stage primary rectification with outstanding voltage surge capability. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE NEMA FR-4 or G10 glass fabric-based epoxy with 4 oz. (140 μm) copper UNITS 1.2 1.6 Aluminum IMS, RthCA = 15 °C/W 2.5 2.8 Aluminum IMS with heatsink, RthCA = 5 °C/W 5.5 6.5 CHARACTERISTICS VALUES UNITS 8 A A Note • TA = 55 °C, TJ = 125 °C, footprint 300 mm2 MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) Sinusoidal waveform VRRM 1200 V IFSM 150 A VF 8 A, TJ = 25 °C 1.10 V -55 to +150 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA 1200 1300 0.50 TJ VOLTAGE RATINGS PART NUMBER VS-8EWS12SLHM3 Revision: 25-May-2023 Document Number: 96118 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWS12SLHM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t TEST CONDITIONS VALUES TC = 105 °C, 180° conduction half sine wave UNITS 8 10 ms sine pulse, rated VRRM applied 125 10 ms sine pulse, no voltage reapplied 150 A 10 ms sine pulse, rated VRRM applied 78 10 ms sine pulse, no voltage reapplied 110 t = 0.1 ms to 10 ms, no voltage reapplied 1100 A2√s VALUES UNITS A2s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop TEST CONDITIONS VFM Forward slope resistance 8 A, TJ = 25 °C rt Threshold voltage TJ = 150 °C VF(TO) Maximum reverse leakage current TJ = 25 °C IRM V 20 mΩ 0.82 V 0.05 VR = rated VRRM TJ = 150 °C 1.1 mA 0.50 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC VALUES UNITS -55 to +150 °C DC operation 2.5 °C/W Typical thermal resistance, junction to ambient (PCB mount) RthJA (1) 62 Approximate weight Marking device 1 g 0.03 oz. Case style DPAK (TO-252AA) 8EWS12SH Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W 150 150 140 130 Ø Conduction angle 120 110 100 30° 60° 90 90° 120° RthJC (DC) = 2.5 °C/W Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) RthJC (DC) = 2.5 °C/W 140 130 Ø Conduction period 120 110 30° 60° 100 90° 120° 180° 180° DC 90 80 0 2 4 6 8 10 Average Forward Current (A) Fig. 1 - Current Rating Characteristics 12 0 2 4 6 8 10 12 14 16 18 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Revision: 25-May-2023 Document Number: 96118 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWS12SLHM3 www.vishay.com 140 180° 120° 90° 60° 30° 14 12 120 10 RMS limit 8 6 Ø Conduction angle 4 TJ = 150 °C 2 110 100 90 80 70 60 50 40 30 0 0 2 4 6 8 1 10 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 3 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 160 20 DC 180° 120° 90° 60° 30° 18 16 14 12 RMS limit 10 8 Ø 6 Conduction period 4 4 6 8 10 14 12 100 80 60 20 0.01 0 2 120 40 TJ = 150 °C 2 0 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = TJ max. No voltage reapplied Rated Vrrm reapplied 140 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) At any rated load condition and with rated Vrrm applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 130 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 16 Vishay Semiconductors 16 0.1 1 10 Pulse Train Duration (s) Fig. 4 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) Average Forward Current (A) 100 TJ = 25 °C TJ = 150 °C 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Revision: 25-May-2023 Document Number: 96118 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWS12SLHM3 www.vishay.com Vishay Semiconductors ZthJC - Transient Thermal Impedance (°C/W) 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.1 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 8 E W S 12 S L H M3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Current rating (8 = 8 A) 3 - Circuit configuration: E = single 4 - Package: W = DPAK (TO-252AA) 5 - Type of silicon: S = standard recovery rectifier 6 - Voltage code x 100 = VRRM 7 - S = surface mountable 8 - L = tape and reel (left oriented), for different orientation contact factory 9 - H = AEC-Q101 qualified 10 - Environmental digit: 12 = 1200 V M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-8EWS12SLHM3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 3000 3000 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95519 Part marking information www.vishay.com/doc?95518 Packaging information www.vishay.com/doc?96495 SPICE model www.vishay.com/doc?96668 Revision: 25-May-2023 Document Number: 96118 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DPAK (TO-252AA) DIMENSIONS in millimeters and inches Pad layout E A 0.265 (6.74) min. b3 E1 c2 L3 4 4 Seating plane D 1 2 L5 0.245 (6.23) min. H L4 3 D1 3 1 2 0.488 (12.40) 0.409 (10.40) Detail “C” b2 0.089 (2.28) min. c b e L1 e1 Lead tip 0.06 (1.524) min. Detail “C” Gauge plane L2 0.093 (2.38) 0.085 (2.18) A1 SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 L1 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 3 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 5 D1 4.93 - 0.194 - 3 E 6.35 6.73 0.250 0.265 5 E1 4.32 - 0.170 - 3 2.74 BSC L2 L3 c2 2.29 BSC INCHES MIN. 0.51 BSC 0.89 1.27 NOTES 0.090 BSC 0.108 REF. 0.020 BSC 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (5) Outline conforms to JEDEC® outline TO-252AA, except for D1 dimension Revision: 25-May-2023 Document Number: 95519 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000
VS-8EWS12SLHM3 价格&库存

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VS-8EWS12SLHM3
  •  国内价格 香港价格
  • 3000+7.897273000+1.02378
  • 6000+7.425776000+0.96265
  • 9000+7.354409000+0.95340

库存:3184

VS-8EWS12SLHM3

库存:0

VS-8EWS12SLHM3
  •  国内价格 香港价格
  • 1+8.629531+1.11870
  • 500+7.23486500+0.93790
  • 1000+6.886201000+0.89270

库存:0

VS-8EWS12SLHM3
  •  国内价格 香港价格
  • 1+26.717231+3.46353
  • 10+17.2457310+2.23568
  • 100+11.87201100+1.53905
  • 500+9.57356500+1.24108
  • 1000+9.001791000+1.16696

库存:3184

VS-8EWS12SLHM3
  •  国内价格
  • 1+8.04533
  • 500+6.74507
  • 1000+6.42001

库存:0