VS-8EWS12SLHM3
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Vishay Semiconductors
High Voltage Surface Mountable Input Rectifier Diode, 8 A
FEATURES
Base
cathode
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
• Flexible solution for reliable AC power rectification
• High surge, low VF rugged blocking diode for DC charging
stations
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
2
3
1
DPAK (TO-252AA)
1
Anode
3
Anode
PRIMARY CHARACTERISTICS
APPLICATIONS
IF(AV)
8A
VR
1200 V
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
VF at IF
1.1 V
IFSM
150 A
DESCRIPTION
TJ max.
150 °C
Package
DPAK (TO-252AA)
Circuit configuration
Single
The VS-8EWS12SLHM3 rectifier high voltage series has
been optimized for very low forward voltage drop, with
moderate leakage.
The high reverse voltage range available allows design of
input stage primary rectification with outstanding voltage
surge capability.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
UNITS
1.2
1.6
Aluminum IMS, RthCA = 15 °C/W
2.5
2.8
Aluminum IMS with heatsink, RthCA = 5 °C/W
5.5
6.5
CHARACTERISTICS
VALUES
UNITS
8
A
A
Note
• TA = 55 °C, TJ = 125 °C, footprint 300 mm2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
Sinusoidal waveform
VRRM
1200
V
IFSM
150
A
VF
8 A, TJ = 25 °C
1.10
V
-55 to +150
°C
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
1200
1300
0.50
TJ
VOLTAGE RATINGS
PART NUMBER
VS-8EWS12SLHM3
Revision: 25-May-2023
Document Number: 96118
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VS-8EWS12SLHM3
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
I2√t
TEST CONDITIONS
VALUES
TC = 105 °C, 180° conduction half sine wave
UNITS
8
10 ms sine pulse, rated VRRM applied
125
10 ms sine pulse, no voltage reapplied
150
A
10 ms sine pulse, rated VRRM applied
78
10 ms sine pulse, no voltage reapplied
110
t = 0.1 ms to 10 ms, no voltage reapplied
1100
A2√s
VALUES
UNITS
A2s
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
TEST CONDITIONS
VFM
Forward slope resistance
8 A, TJ = 25 °C
rt
Threshold voltage
TJ = 150 °C
VF(TO)
Maximum reverse leakage current
TJ = 25 °C
IRM
V
20
mΩ
0.82
V
0.05
VR = rated VRRM
TJ = 150 °C
1.1
mA
0.50
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
VALUES
UNITS
-55 to +150
°C
DC operation
2.5
°C/W
Typical thermal resistance,
junction to ambient (PCB mount)
RthJA (1)
62
Approximate weight
Marking device
1
g
0.03
oz.
Case style DPAK (TO-252AA)
8EWS12SH
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
150
150
140
130
Ø
Conduction angle
120
110
100
30°
60°
90
90°
120°
RthJC (DC) = 2.5 °C/W
Maximum Allowable Case
Temperature (°C)
Maximum Allowable Case
Temperature (°C)
RthJC (DC) = 2.5 °C/W
140
130
Ø
Conduction period
120
110
30°
60°
100
90°
120°
180°
180°
DC
90
80
0
2
4
6
8
10
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
12
0
2
4
6
8
10
12
14
16
18
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Revision: 25-May-2023
Document Number: 96118
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWS12SLHM3
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140
180°
120°
90°
60°
30°
14
12
120
10
RMS limit
8
6
Ø
Conduction angle
4
TJ = 150 °C
2
110
100
90
80
70
60
50
40
30
0
0
2
4
6
8
1
10
10
100
Average Forward Current (A)
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 3 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
160
20
DC
180°
120°
90°
60°
30°
18
16
14
12
RMS limit
10
8
Ø
6
Conduction period
4
4
6
8
10
14
12
100
80
60
20
0.01
0
2
120
40
TJ = 150 °C
2
0
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = TJ max.
No voltage reapplied
Rated Vrrm reapplied
140
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
At any rated load condition and with
rated Vrrm applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
130
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
16
Vishay Semiconductors
16
0.1
1
10
Pulse Train Duration (s)
Fig. 4 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
Average Forward Current (A)
100
TJ = 25 °C
TJ = 150 °C
10
1
0
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 25-May-2023
Document Number: 96118
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWS12SLHM3
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Vishay Semiconductors
ZthJC - Transient Thermal
Impedance (°C/W)
10
Steady state value
(DC operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
0.1
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
8
E
W
S
12
S
L
H
M3
1
2
3
4
5
6
7
8
9
10
1
-
Vishay Semiconductors product
2
-
Current rating (8 = 8 A)
3
-
Circuit configuration:
E = single
4
-
Package:
W = DPAK (TO-252AA)
5
-
Type of silicon:
S = standard recovery rectifier
6
-
Voltage code x 100 = VRRM
7
-
S = surface mountable
8
-
L = tape and reel (left oriented), for different orientation contact factory
9
-
H = AEC-Q101 qualified
10
-
Environmental digit:
12 = 1200 V
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-8EWS12SLHM3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
3000
3000
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95519
Part marking information
www.vishay.com/doc?95518
Packaging information
www.vishay.com/doc?96495
SPICE model
www.vishay.com/doc?96668
Revision: 25-May-2023
Document Number: 96118
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
DPAK (TO-252AA)
DIMENSIONS in millimeters and inches
Pad layout
E
A
0.265 (6.74) min.
b3
E1
c2
L3
4
4
Seating
plane
D
1
2
L5
0.245 (6.23) min.
H
L4
3
D1
3
1
2
0.488 (12.40)
0.409 (10.40)
Detail “C”
b2
0.089 (2.28) min.
c
b
e
L1
e1
Lead tip
0.06 (1.524) min.
Detail “C”
Gauge plane
L2
0.093 (2.38)
0.085 (2.18)
A1
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
MAX.
A
2.18
2.39
0.086
0.094
e
A1
-
0.13
-
0.005
H
9.40
10.41
0.370
0.410
b
0.64
0.89
0.025
0.035
L
1.40
1.78
0.055
0.070
b2
0.76
1.14
0.030
0.045
L1
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
3
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
5
D1
4.93
-
0.194
-
3
E
6.35
6.73
0.250
0.265
5
E1
4.32
-
0.170
-
3
2.74 BSC
L2
L3
c2
2.29 BSC
INCHES
MIN.
0.51 BSC
0.89
1.27
NOTES
0.090 BSC
0.108 REF.
0.020 BSC
0.035
0.050
L4
-
1.02
-
0.040
L5
1.14
1.52
0.045
0.060
3
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(5) Outline conforms to JEDEC® outline TO-252AA, except for D1 dimension
Revision: 25-May-2023
Document Number: 95519
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000