VS-8EWS08S-M3, VS-8EWS12S-M3
www.vishay.com
Vishay Semiconductors
High Voltage Surface Mountable Input Rectifier Diode, 8 A
FEATURES
Base
cathode
+
2
• Glass passivated pellet chip junction
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
2
3
1
1
Anode -
DPAK (TO-252AA)
3
- Anode
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
PRIMARY CHARACTERISTICS
IF(AV)
8A
VR
800 V, 1200 V
VF at IF
1.1 V
DESCRIPTION
IFSM
150 A
TJ max.
150 °C
Package
DPAK (TO-252AA)
Circuit configuration
Single
The VS-8EWS..S-M3 rectifier high voltage series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
The high reverse voltage range available allows design of
input stage primary rectification with outstanding voltage
surge capability.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
1.2
1.6
Aluminum IMS, RthCA = 15 °C/W
2.5
2.8
Aluminum IMS with heatsink, RthCA = 5 °C/W
5.5
6.5
UNITS
A
Note
• TA = 55 °C, TJ = 125 °C, footprint 300 mm2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Sinusoidal waveform
VALUES
UNITS
8
A
VRRM
800/1200
V
IFSM
150
A
VF
8 A, TJ = 25 °C
TJ
1.10
V
-55 to +150
°C
IRRM
AT 150 °C
mA
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
VS-8EWS08S-M3
800
900
VS-8EWS12S-M3
1200
1300
0.5
Revision: 24-Sep-2019
Document Number: 93383
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWS08S-M3, VS-8EWS12S-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
SYMBOL
IF(AV)
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
TEST CONDITIONS
TC = 105 °C, 180° conduction half sine wave
VALUES
UNITS
8
A
10 ms sine pulse, rated VRRM applied
125
10 ms sine pulse, no voltage reapplied
150
10 ms sine pulse, rated VRRM applied
78
10 ms sine pulse, no voltage reapplied
110
t = 0.1 ms to 10 ms, no voltage reapplied
1100
A2s
VALUES
UNITS
1.1
V
20
m
0.82
V
A2s
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
VFM
rt
VF(TO)
IRM
TEST CONDITIONS
8 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
VR = Rated VRRM
0.05
mA
0.50
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
junction to ambient (PCB mount)
SYMBOL
TEST CONDITIONS
TJ, TStg
RthJC
DC operation
UNITS
-55 to +150
°C
2.5
°C/W
RthJA (1)
62
1
Approximate weight
Marking device
VALUES
g
0.03
Case style DPAK (TO-252AA)
oz.
8EWS08S
8EWS12S
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
Revision: 24-Sep-2019
Document Number: 93383
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWS08S-M3, VS-8EWS12S-M3
www.vishay.com
8EWS. Series
RthJC (DC) = 2.5 °C/W
140
130
Ø
Conduction angle
120
110
100
30°
60°
90
90°
120°
Maximum Average Forward
Power Loss (W)
20
150
Maximum Allowable Case
Temperature (°C)
Vishay Semiconductors
180°
0
2
4
12
RMS limit
10
8
Ø
6
Conduction period
4
8EWS. Series
TJ = 150 °C
2
6
10
8
12
0
4
6
8
10
12
14
16
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
140
8EWS. Series
RthJC (DC) = 2.5 °C/W
140
At any rated load condition and with
rated Vrrm applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
130
130
Peak Half Sine Wave
Forward Current (A)
120
Ø
Conduction period
120
110
2
Average Forward Current (A)
150
30°
60°
100
90°
120°
180°
90
110
100
90
80
70
60
50
VS-8EWS08S .. Series
40
DC
30
0
16
2
4
6
8
10
12
14
16
12
100
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
160
140
10
RMS limit
8
6
Ø
Conduction angle
4
8EWS. Series
TJ = 150 °C
2
2
4
6
8
120
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = TJ max.
No voltage reapplied
Rated Vrrm reapplied
100
80
60
40
VS-8EWS08S .. Series
0
0
10
Average Forward Current (A)
180°
120°
90°
60°
30°
14
1
18
Peak Half Sine Wave
Forward Current (A)
Maximum Allowable Case
Temperature (°C)
16
14
0
80
Maximum Average Forward
Power Loss (W)
DC
180°
120°
90°
60°
30°
18
10
20
0.01
0.1
1
10
Average Forward Current (A)
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 24-Sep-2019
Document Number: 93383
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWS08S-M3, VS-8EWS12S-M3
Instantaneous Forward Current (A)
www.vishay.com
Vishay Semiconductors
100
TJ = 25 °C
TJ = 150 °C
10
8EWS. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
ZthJC - Transient Thermal
Impedance (°C/W)
10
Steady state value
(DC operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
0.1
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 24-Sep-2019
Document Number: 93383
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWS08S-M3, VS-8EWS12S-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
8
E
W
S
12
S
TR
-M3
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Current rating (8 = 8 A)
3
-
Circuit configuration:
E = single diode
4
-
Package:
W = D-PAK
5
-
Type of silicon:
S = standard recovery rectifier
6
-
Voltage code x 100 = VRRM
7
-
S = surface mountable
8
-
TR = tape and reel
08 = 800 V
12 = 1200 V
TRR = tape and reel (right oriented)
TRL = tape and reel (left oriented)
9
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-8EWS08S-M3
75
3000
Antistatic plastic tubes
VS-8EWS08STR-M3
2000
2000
13" diameter reel
VS-8EWS08STRL-M3
3000
3000
13" diameter reel
VS-8EWS08STRR-M3
3000
3000
13" diameter reel
VS-8EWS12S-M3
75
3000
Antistatic plastic tubes
VS-8EWS12STR-M3
2000
2000
13" diameter reel
VS-8EWS12STRL-M3
3000
3000
13" diameter reel
VS-8EWS12STRR-M3
3000
3000
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95627
Part marking information
www.vishay.com/doc?95176
Packaging information
www.vishay.com/doc?95033
SPICE model
www.vishay.com/doc?96668
Revision: 24-Sep-2019
Document Number: 93383
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 01-Jan-2022
1
Document Number: 91000