VS-8EWS16SLHM3
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Vishay Semiconductors
High Voltage Surface Mount Input Rectifier Diode, 8 A
FEATURES
Base
cathode
+
2
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
• Flexible solution for reliable AC power rectification
• High surge, low VF rugged blocking diode for DC charging
stations
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
3
1
DPAK (TO-252AA)
1
Anode -
3
- Anode
PRIMARY CHARACTERISTICS
APPLICATIONS
IF(AV)
8A
VR
1600 V
VF at IF
1.1 V
IFSM
150 A
TJ max.
150 °C
Package
DPAK (TO-252AA)
Circuit configuration
Single
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
DESCRIPTION
The VS-8EWS16SLHM3 rectifier high voltage series has
been optimized for very low forward voltage drop, with
moderate leakage.
The high reverse voltage range available allows design of
input stage primary rectification with outstanding voltage
surge capability.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
UNITS
1.2
1.6
Aluminum IMS, RthCA = 15 °C/W
2.5
2.8
Aluminum IMS with heatsink, RthCA = 5 °C/W
5.5
6.5
CHARACTERISTICS
VALUES
UNITS
8
A
A
Note
• TA = 55 °C, TJ = 125 °C, footprint 300 mm2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
Sinusoidal waveform
VRRM
1600
V
IFSM
150
A
VF
8 A, TJ = 25 °C
1.10
V
-40 to +150
°C
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
1600
1700
0.5
TJ
VOLTAGE RATINGS
PART NUMBER
VS-8EWS16SLHM3
Revision: 26-Oct-2021
Document Number: 96489
1
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VS-8EWS16SLHM3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
IF(AV)
TC = 105 °C, 180° conduction half sine wave
8
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
I2√t
10 ms sine pulse, rated VRRM applied
125
10 ms sine pulse, no voltage reapplied
150
UNITS
A
10 ms sine pulse, rated VRRM applied
78
10 ms sine pulse, no voltage reapplied
110
t = 0.1 ms to 10 ms, no voltage reapplied
1100
A2√s
VALUES
UNITS
A2s
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
TEST CONDITIONS
8 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
IRM
V
20
mΩ
0.82
V
0.05
VR = Rated VRRM
TJ = 150 °C
1.1
mA
0.50
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
VALUES
UNITS
-40 to +150
°C
DC operation
2.5
°C/W
Typical thermal resistance,
junction to ambient (PCB mount)
RthJA (1)
62
Approximate weight
Marking device
1
g
0.03
oz.
Case style DPAK (TO-252AA)
8EWS16SH
150
RthJC (DC) = 2.5 °C/W
140
130
Ø
Conduction angle
120
110
100
30°
60°
90
90°
120°
180°
80
0
2
4
6
8
10
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
12
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
150
RthJC (DC) = 2.5 °C/W
140
130
Ø
Conduction period
120
110
30°
60°
100
90°
120°
180°
DC
90
0
2
4
6
8
10
12
14
16
18
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Revision: 26-Oct-2021
Document Number: 96489
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWS16SLHM3
16
Vishay Semiconductors
180°
120°
90°
60°
30°
14
12
10
RMS limit
8
6
Ø
Conduction angle
4
2
TJ = 150 °C
0
0
2
4
8
6
140
Peak Half Sine Wave Forward Current (A)
Maximum Average Forward Power Loss (W)
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10
Average Forward Current (A)
120
110
100
90
80
70
60
50
40
30
1
12
RMS limit
10
8
Ø
6
Conduction period
4
TJ = 150 °C
2
0
0
2
4
6
8
10
14
12
160
Peak Half Sine Wave Forward Current (A)
Maximum Average Forward Power Loss (W)
DC
180°
120°
90°
60°
30°
14
16
Average Forward Current (A)
Maximum non-repetitive surge current
vs. pulse train duration.
Initial TJ = TJ max.
No voltage reapplied
Rated Vrrm reapplied
140
120
100
80
60
40
20
0
0.01
0.1
1
10
Pulse Train Duration (s)
Fig. 4 - Forward Power Loss Characteristics
Instantaneous Forward Current (A)
100
Fig. 5 - Maximum Non-Repetitive Surge Current
20
16
10
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 3 - Forward Power Loss Characteristics
18
At any rated load condition and with
rated Vrrm applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
130
Fig. 6 - Maximum Non-Repetitive Surge Current
100
TJ = 25 °C
TJ = 150 °C
10
1
0
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 26-Oct-2021
Document Number: 96489
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWS16SLHM3
ZthJC - Transient Thermal Impedance (°C/W)
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Vishay Semiconductors
10
Steady state value
(DC operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
0.1
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
8
E
W
S
16
S
L
H
M3
1
2
3
4
5
6
7
8
9
10
1
-
Vishay Semiconductors product
2
-
Current rating (8 = 8 A)
3
-
Circuit configuration:
E = single
4
-
Package:
W = DPAK (TO-252AA)
5
-
Type of silicon:
6
-
Voltage code x 100 = VRRM (16 = 1600 V)
7
-
S = surface mountable
8
-
L = tape and reel (left oriented), for different orientation contact factory
9
-
H = AEC-Q101 qualified
10
-
Environmental digit:
S = standard recovery rectifier
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-8EWS16SLHM3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
3000
3000
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95519
Part marking information
www.vishay.com/doc?95518
Packaging information
www.vishay.com/doc?96495
SPICE model
www.vishay.com/doc?96960
Revision: 26-Oct-2021
Document Number: 96489
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
DPAK (TO-252AA)
DIMENSIONS in millimeters and inches
Pad layout
E
A
0.265 (6.74) min.
b3
E1
c2
L3
4
4
Seating
plane
D
1
2
L5
0.245 (6.23) min.
H
L4
3
D1
3
1
2
0.488 (12.40)
0.409 (10.40)
Detail “C”
b2
0.089 (2.28) min.
c
b
e
L1
e1
Lead tip
0.06 (1.524) min.
Detail “C”
Gauge plane
L2
0.093 (2.38)
0.085 (2.18)
A1
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
MAX.
A
2.18
2.39
0.086
0.094
e
A1
-
0.13
-
0.005
H
9.40
10.41
0.370
0.410
b
0.64
0.89
0.025
0.035
L
1.40
1.78
0.055
0.070
b2
0.76
1.14
0.030
0.045
L1
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
3
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
5
D1
5.21
-
0.205
-
3
E
6.35
6.73
0.250
0.265
5
E1
4.32
-
0.170
-
3
2.74 BSC
L2
L3
c2
2.29 BSC
INCHES
MIN.
0.51 BSC
0.89
1.27
NOTES
0.090 BSC
0.108 REF.
0.020 BSC
0.035
0.050
L4
-
1.02
-
0.040
L5
1.14
1.52
0.045
0.060
3
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(5) Outline conforms to JEDEC® outline TO-252AA
Revision: 06-Jun-17
Document Number: 95519
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
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Revision: 09-Jul-2021
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Document Number: 91000
