VS-8TQ080S-M3, VS-8TQ100S-M3
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Vishay Semiconductors
High Performance Schottky Rectifier, 8 A
FEATURES
Base
cathode
2
•
•
•
•
175 °C TJ operation
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
2
1
3
Anode
1
3
N/C
D2PAK (TO-263AB)
PRIMARY CHARACTERISTICS
• Designed and qualified according to JEDEC®-JESD 47
IF(AV)
8A
VR
80 V, 100 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VF at IF
0.58 V
IRM
7 mA at 125 °C
TJ max.
175 °C
EAS
7.5 mJ
Package
D2PAK (TO-263AB)
Circuit configuration
Single
DESCRIPTION
The VS-8TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
Range
IFSM
tp = 5 μs sine
VF
8 Apk, TJ = 125 °C
TJ
Range
VALUES
UNITS
8
A
80/100
V
850
A
0.58
V
-55 to +175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage
VRWM
VS-8TQ080S-M3
VS-8TQ100S-M3
UNITS
80
100
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
8
A
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 0.50 A, L = 60 mH
7.50
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.50
A
Repetitive avalanche current
50 % duty cycle at TC = 157 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
850
230
A
Revision: 21-Dec-2021
Document Number: 94946
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VS-8TQ080S-M3, VS-8TQ100S-M3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
8A
Maximum forward voltage drop
VFM (1)
See fig. 1
8A
IRM (1)
0.88
0.69
0.55
VR = Rated VR
TJ = 125 °C
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
LS
Measured lead to lead 5 mm from package body
dV/dt
mA
7
Typical series inductance
Maximum voltage rate of change
V
0.58
TJ = 125 °C
TJ = 25 °C
UNITS
0.72
TJ = 25 °C
16 A
16 A
Maximum reverse leakage current
See fig. 2
VALUES
Rated VR
500
pF
8
nH
10 000
V/μs
VALUES
UNITS
-55 to +175
°C
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
See fig. 4
2.0
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, and greased
0.50
°C/W
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
8TQ080S
Case style D2PAK (TO-263AB)
Marking device
8TQ100S
100
1000
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
1
0.1
IR - Reverse Current (mA)
IF - Instantaneous
Forward Current (A)
TJ = 175 °C
10
TJ = 150 °C
1
TJ = 125 °C
0.1
TJ = 100 °C
TJ = 75 °C
0.01
TJ = 50 °C
0.001
TJ = 25 °C
0.0001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0
20
40
60
80
100
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 21-Dec-2021
Document Number: 94946
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
0
10 20 30 40 50 60 70 80 90 100 110
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.1
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
180
7
175
6
170
Average Power Loss (W)
Allowable Case Temperature (°C)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
DC
165
160
Square wave (D = 0.50)
80 % rated VR applied
155
150
145
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
5
RMS limit
4
3
DC
2
1
See note (1)
0
140
0
2
4
6
8
10
12
0
2
4
6
8
10
12
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Revision: 21-Dec-2021
Document Number: 94946
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8TQ080S-M3, VS-8TQ100S-M3
www.vishay.com
IFSM - Non-Repetitive Surge Current (A)
Vishay Semiconductors
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 21-Dec-2021
Document Number: 94946
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8TQ080S-M3, VS-8TQ100S-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
8
T
Q
100
S
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating (8 A)
3
-
Circuit configuration: T = TO-220
4
-
Schottky “Q” series
5
-
Voltage ratings
6
-
S = D2PAK (TO-263AB)
7
-
TRL -M3
7
8
080 = 80 V
100 = 100 V
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
8
-
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
BASE QUANTITY
VS-8TQ080S-M3
50
PACKAGING DESCRIPTION
Antistatic plastic tubes
VS-8TQ080STRL-M3
800
13" diameter plastic tape and reel
VS-8TQ080STRR-M3
800
13" diameter plastic tape and reel
VS-8TQ100S-M3
50
Antistatic plastic tubes
VS-8TQ100STRL-M3
800
13" diameter plastic tape and reel
VS-8TQ100STRR-M3
800
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96164
Part marking information
www.vishay.com/doc?95444
Packaging information
www.vishay.com/doc?96424
SPICE model
www.vishay.com/doc?96227
Revision: 21-Dec-2021
Document Number: 94946
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
Base
Metal
(4)
b1, b3
H
2x e
Gauge
plane
c1 (4)
(c)
B
0° to 8°
Seating
plane
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
4
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 01-Jan-2022
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Document Number: 91000