VS-8TQ080STRLHM3

VS-8TQ080SHM3, VS-8TQ100SHM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base cathode 2 D2PAK (TO-263AB) • • • • 175 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 3 Anode 1 N/C PRODUCT SUMMARY IF(AV) 8A • AEC-Q101 qualified meets JESD 201 class 1A whisker test VR 80 V, 100 V VF at IF 0.58 V IRM 7 mA at 125 °C TJ max. 175 °C EAS 7.5 mJ Package D2PAK (TO-263AB) Diode variation Single • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM Range IFSM tp = 5 μs sine VF 8 Apk, TJ = 125 °C TJ Range VALUES UNITS 8 A 80/100 V 850 A 0.58 V -55 to +175 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-8TQ080SHM3 VS-8TQ100SHM3 UNITS 80 100 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 8 A Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.50 A, L = 60 mH 7.50 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.50 A 50 % duty cycle at TC = 157 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 850 A 230 Revision: 08-Aug-17 Document Number: 94961 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8TQ080SHM3, VS-8TQ100SHM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 8A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 °C 16 A 8A TJ = 125 °C 16 A Maximum reverse leakage current See fig. 2 IRM (1) Maximum junction capacitance CT Typical series inductance LS Maximum voltage rate of change dV/dt TJ = 25 °C VR = Rated VR TJ = 125 °C VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR VALUES UNITS 0.72 0.88 V 0.58 0.69 0.55 mA 7 500 pF 8 nH 10 000 V/μs VALUES UNITS -55 to 175 °C Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 2.0 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.50 2 g 0.07 oz. minimum 6 (5) kgf · cm maximum 12 (10) (lbf · in) Approximate weight Mounting torque Marking device °C/W Case style D2PAK 8TQ080SH 8TQ100SH Revision: 08-Aug-17 Document Number: 94961 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8TQ080SHM3, VS-8TQ100SHM3 www.vishay.com Vishay Semiconductors 100 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) TJ = 175 °C 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 0.1 10 TJ = 150 °C 1 TJ = 125 °C 0.1 TJ = 100 °C TJ = 75 °C 0.01 TJ = 50 °C 0.001 TJ = 25 °C 0.0001 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 20 40 60 80 100 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 10 20 30 40 50 60 70 80 90 100 110 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.1 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 08-Aug-17 Document Number: 94961 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8TQ080SHM3, VS-8TQ100SHM3 Vishay Semiconductors 180 7 175 6 170 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com DC 165 160 Square wave (D = 0.50) 80 % rated VR applied 155 150 145 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 5 RMS limit 4 3 DC 2 1 See note (1) 0 140 0 2 4 6 8 10 0 12 2 4 6 8 10 12 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 08-Aug-17 Document Number: 94961 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8TQ080SHM3, VS-8TQ100SHM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 8 T Q 100 S TRL H M3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Current rating (8 A) 3 - Circuit configuration: T = TO-220 4 - Schottky “Q” series 5 - Voltage ratings 6 - S = D2PAK 7 - 080 = 80 V 100 = 100 V None = tube TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 8 - H = AEC-Q101 qualified 9 - M3 = Halogen-free, RoHS-compliant. and termination lead (Pb)-free ORDERING INFORMATION PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-8TQ080SHM3 50 1000 Antistatic plastic tubes VS-8TQ080STRRHM3 800 800 13" diameter reel VS-8TQ080STRLHM3 800 800 13" diameter reel VS-8TQ100SHM3 50 1000 Antistatic plastic tubes VS-8TQ100STRRHM3 800 800 13" diameter reel VS-8TQ100STRLHM3 800 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95444 Packaging information www.vishay.com/doc?95032 SPICE model www.vishay.com/doc?96227 Revision: 08-Aug-17 Document Number: 94961 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating Base Metal (4) b1, b3 H 2x e Gauge plane c1 (4) (c) B 0° to 8° Seating plane L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC® outline TO-263AB Revision: 08-Jul-15 Document Number: 95046 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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