VS-8TQ100-M3

VS-8TQ060-M3, VS-8TQ080-M3, VS-8TQ100-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base cathode 2 2 • 175 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 1 3 1 Cathode TO-220AC 2L 3 Anode • Guard ring for enhanced ruggedness and long term reliability PRIMARY CHARACTERISTICS • Designed and qualified according to JEDEC®-JESD 47 IF(AV) 8A VR 60 V, 80 V, 100 V VF at IF 0.58 V IRM max. 7 mA at 125 °C TJ max. 175 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION EAS 7.5 mJ Package 2L TO-220AC Circuit configuration Single The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) Rectangular waveform VRRM Range VALUES UNITS 8 A 60 to 100 V IFSM tp = 5 μs sine 850 A VF 8 Apk, TJ = 125 °C 0.58 V TJ Range -55 to +175 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-8TQ060-M3 VS-8TQ080-M3 VS-8TQ100-M3 UNITS 60 80 100 V ABSOLUTE MAXIMUM RATINGS SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current, see fig. 5 IF(AV) 50 % duty cycle at TC = 157 °C, rectangular waveform 8 A Maximum peak one cycle non-repetitive surge current, see fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.50 A, L = 60 mH 7.50 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.50 A PARAMETER Repetitive avalanche current 5 µs sine or 3 µs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 850 A 230 Revision: 22-Dec-2021 Document Number: 96265 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8TQ060-M3, VS-8TQ080-M3, VS-8TQ100-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 8A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 °C 16 A 8A TJ = 125 °C 16 A Maximum reverse leakage current See fig. 2 Maximum junction capacitance Typical series inductance Maximum voltage rate of change IRM (1) TJ = 25 °C VR = rated VR TJ = 125 °C CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C LS Measured lead to lead 5 mm from package body dV/dt Rated VR VALUES UNITS 0.72 0.88 V 0.58 0.69 0.55 mA 7 500 pF 8 nH 10 000 V/µs VALUES UNITS -55 to +175 °C Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 2.0 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth, and greased 0.50 Approximate weight Mounting torque °C/W 2 g 0.07 oz. minimum 6 (5) kgf · cm maximum 12 (10) (lbf · in) 8TQ060 Marking device Case style 2L TO-220AC 8TQ080 8TQ100 Revision: 22-Dec-2021 Document Number: 96265 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8TQ060-M3, VS-8TQ080-M3, VS-8TQ100-M3 Vishay Semiconductors 100 1000 TJ = 175 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 0.1 10 TJ = 150 °C TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 75 °C 0.01 TJ = 50 °C 0.001 TJ = 25 °C 0.0001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 20 40 60 80 100 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 10 20 30 40 50 60 70 80 90 100 110 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.1 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 22-Dec-2021 Document Number: 96265 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8TQ060-M3, VS-8TQ080-M3, VS-8TQ100-M3 Vishay Semiconductors 180 7 175 6 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com DC 170 165 160 Square wave (D = 0.50) 80 % rated VR applied 155 150 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 5 4 RMS limit 3 2 DC 1 145 See note (1) 0 140 0 2 4 6 8 12 10 0 2 4 6 8 10 12 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 10 000 1000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 22-Dec-2021 Document Number: 96265 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8TQ060-M3, VS-8TQ080-M3, VS-8TQ100-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 8 T Q 100 -M3 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (8 = 8 A) 3 - Package: T = TO-220 4 - Schottky "Q" series 5 - Voltage ratings 6 - Environmental digit 060 = 60 V 080 = 80 V 100 = 100 V -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION VS-8TQ060-M3 50 Antistatic plastic tubes VS-8TQ080-M3 50 Antistatic plastic tubes VS-8TQ100-M3 50 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96156 Part marking information www.vishay.com/doc?95391 SPICE model www.vishay.com/doc?96227 Revision: 22-Dec-2021 Document Number: 96265 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-220AC 2L DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 (H1) H1 C D2 (6) D 2 D D L1 (2) C (6) c 2xb D1 2 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AC SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 07-Mar-2022 Document Number: 96156 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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