VS-90EPF12L-M3

VS-90EPF12L-M3, VS-90APF12L-M3 www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 90 A FEATURES • Glass passivated pellet chip junction • Low forward voltage drop and short reverse recovery time 2 1 1 • Designed and JEDEC®-JESD 47 2 3 3 TO-247AD 2L Base cathode 2 1 Cathode 3 Anode VS-90EPF12L-M3 Base cathode 2 1 These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. DESCRIPTION VS-90APF12L-M3 The VS-90EPF12L-M3, VS-90APF12L-M3 soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. PRIMARY CHARACTERISTICS 90 A VR 1200 V VF at IF 1.38 V IFSM 1000 A trr 90 ns to APPLICATIONS 3 Anode IF(AV) according • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-247AD 3L Anode qualified The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. TJ max. 150 °C Package TO-247AD 2L, TO-247AD 3L Circuit configuration Single Snap factor 0.5      MAJOR RATINGS AND CHARACTERISTICS SYMBOL TEST CONDITIONS VRRM IF(AV) Sinusoidal waveform VALUES UNITS 1200 V 90 100 IFSM A trr 1 A, - 100 A/μs 90 VF 40 A, TJ = 25 °C 1.2 V -40 to +150 °C VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA TJ ns VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VS-90EPF12L-M3 1200 1300 17 VS-90APF12L-M3 1200 1300 17 Revision: 06-Jul-2018 Document Number: 95654 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-90EPF12L-M3, VS-90APF12L-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t TEST CONDITIONS VALUES TC = 106 °C, 180° conduction half sine wave UNITS 90 A 10 ms sine pulse, rated VRRM applied 850 10 ms sine pulse, no voltage reapplied 1000 10 ms sine pulse, rated VRRM applied 3610 10 ms sine pulse, no voltage reapplied 5100 t = 0.1 ms to 10 ms, no voltage reapplied A2s 51 000 A2s VALUES UNITS ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 90 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C V 4.03 m 0.87 V 0.1 VR = Rated VRRM TJ = 150 °C 1.38 mA 17 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor TEST CONDITIONS IF at 80 Apk 25 A/μs 25 °C S VALUES UNITS 480 ns 7.1 A 2.1 μC IFM trr t dir dt 0.5 Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation Marking device UNITS -40 to +150 °C 0.2 °C/W 40 Mounting surface, smooth and greased 0.25 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES Case style TO-247AD 2L 90EPF12L Case style TO-247AD 3L 90APF12L Revision: 06-Jul-2018 Document Number: 95654 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-90EPF12L-M3, VS-90APF12L-M3 Vishay Semiconductors 150 RthJC (DC) = 0.2 °C/W 140 130 Conduction angle 120 110 30° 100 60° 90° 90 120° 180° 80 0 20 40 60 80 100 Max. Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) www.vishay.com 220 180° 120° 90° 60° 30° 200 180 160 140 120 RMS limit 100 80 Conduction angle 60 40 TJ = 150 °C 20 0 0 30 90 120 150 Fig. 4 - Forward Power Loss Characteristics Fig. 1 - Current Rating Characteristics 550 150 RthJC (DC) = 0.2 °C/W Peak Half Sine Wave Forward Current (A) 140 130 Conduction angle 120 110 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 500 30° 60° 100 450 400 350 300 250 200 90° 150 90 120° DC° 180° 100 80 0 20 40 60 80 100 120 140 1 160 10 100 Average On-state Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 1100 180 180° 120° 90° 60° 30° 160 140 120 100 1000 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 60 Average On-state Current (A) Average On-state Current (A) Max. Average On-state Power Loss (W) DC RMS limit 80 Conduction angle 60 40 800 700 600 500 400 300 200 TJ = 150 °C 20 900 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 100 0 0 20 40 60 80 Average On-state Current (A) Fig. 3 - Forward Power Loss Characteristics 100 0 0.01 0.1 1 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 06-Jul-2018 Document Number: 95654 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-90EPF12L-M3, VS-90APF12L-M3 Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 1000 100 TJ = 25 °C TJ = 150 °C 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 800 12 000 TJ = 25 °C Qrr - Typical Reverse Recovery Charge (nC) trr - Typical Reverse Recovery Time (ns) 700 600 500 IFM = 80 A 400 300 IFM = 40 A IFM = 20 A 200 IFM = 10 A TJ = 25 °C 10 000 IFM = 80 A 8000 IFM = 40 A 6000 IFM = 20 A 4000 IFM = 10 A 2000 100 IFM = 1 A IFM = 1 A 0 0 0 40 80 120 160 200 0 dI/dt - Rate of Fall of Forward Current (A/µs) 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 1800 25 000 1600 TJ = 150 °C Qrr - Typical Reverse Recovery Charge (nC) trr - Typical Reverse Recovery Time (ns) 40 1400 IFM = 80 A IFM = 40 A IFM = 20 A IFM = 10 A IFM = 1 A 1200 1000 800 600 400 IFM = 80 A TJ = 150 °C 20 000 15 000 IFM = 40 A IFM = 20 A 10 000 IFM = 10 A 5000 IFM = 1 A 200 0 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C Revision: 06-Jul-2018 Document Number: 95654 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-90EPF12L-M3, VS-90APF12L-M3 www.vishay.com Vishay Semiconductors 60 45 IFM = 80 A TJ = 25 °C 35 30 IFM = 40 A 25 IFM = 20 A 20 15 IFM = 10 A 10 IFM = 80 A TJ = 150 °C 50 Irr - Typical Reverse Recovery Current (A) Irr - Typical Reverse Recovery Current (A) 40 IFM = 40 A 40 IFM = 20 A 30 IFM = 10 A 20 10 5 IFM = 1 A IFM = 1 A 0 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Fig. 13 - Recovery Current Characteristics, TJ = 150 °C ZthJC - Transient Thermal Impedance (°C/W) dI/dt - Rate of Fall of Forward Current (A/µs) 1 0.5 0.1 0.33 0.25 0.17 0.08 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 06-Jul-2018 Document Number: 95654 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-90EPF12L-M3, VS-90APF12L-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 90 A P F 12 L -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (90 = 90 A) 3 - Circuit configuration: E = single, 2 pins A = single, 3 pins 4 - Package: P = TO-247AD 5 - Type of silicon: 6 - Voltage code x 100 = VRRM 7 - L = long lead 8 - Environmental digit: F = fast recovery 12 = 1200 V -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBES MINIMUM ORDER QUANTITY VS-90EPF12L-M3 25 500 PACKAGING DESCRIPTION Antistatic plastic tubes VS-90APF12L-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-247AD 2L www.vishay.com/doc?95536 TO-247AD 3L www.vishay.com/doc?95626 TO-247AD 2L www.vishay.com/doc?95648 TO-247AD 3L www.vishay.com/doc?95007 Revision: 06-Jul-2018 Document Number: 95654 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 2L DIMENSIONS in millimeters and inches A A (3) (6) F P E B (2) R/2 A2 S (Datum B) Ø K M D BM F P1 A D2 Q 2xR (2) D1 (4) D 1, 2 4 D 3 Thermal pad (5) L1 C L See view B (4) E1 A 0.01 M D B M View A - A C 2 x b2 2xb 2x e A1 0.10 M C A M (b1, b3) Plating Base metal D D (c) c1 C C (b, b2) (4) Section C - C, D - D SYMBOL MILLIMETERS View B INCHES MIN. MAX. MIN. MAX. A 4.65 5.31 0.183 0.209 A1 2.21 2.59 0.087 0.102 NOTES SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. E 15.29 15.87 0.602 0.625 E1 13.46 - 0.53 - A2 1.50 2.49 0.059 0.098 e 5.46 BSC b 0.99 1.40 0.039 0.055 ØK 0.254 b1 0.99 1.35 0.039 0.053 L 19.81 20.32 0.780 0.800 b2 1.65 2.39 0.065 0.094 L1 3.71 4.29 0.146 0.169 b3 1.65 2.34 0.065 0.092 ØP 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 Ø P1 - 6.98 - 0.275 NOTES 3 0.215 BSC 0.010 c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224 D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - 4 S D2 0.51 1.35 0.020 0.053 5.51 BSC 0.217 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95536 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 3L DIMENSIONS in millimeters and inches A A (3) (6) Φ P E B (2) R/2 A2 S (Datum B) Ø K M DBM Φ P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L (4) E1 A 0.01 M D B M View A - A See view B 2 x b2 3xb C 2x e b4 A1 0.10 M C A M (b1, b3, b5) Plating Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 19.81 20.32 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.53 0.215 BSC 0.010 0.780 0.800 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 06-Mar-2020 Document Number: 95626 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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