VS-90EPS16L-M3, VS-90APS16L-M3
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Vishay Semiconductors
High Voltage, Input Rectifier Diode, 90 A
FEATURES
• Very low forward voltage drop
• Glass passivated pellet chip junction
2
• Designed and qualified
JEDEC®-JESD 47
1
1
2
3
TO-247AD 3L
Base
cathode
+ 2
Base
cathode
2
to
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
TO-247AD 2L
according
APPLICATIONS
• Input rectification for single and three phase bridge
configurations
• Off-board EV/HEV battery chargers
• Renewable energy inverters
1
Cathode
3
Anode
- 1
Anode
VS-90EPS16L-M3
• Input rectification for single and three phase bridge
configurations
- 3
Anode
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
VS-90APS16L-M3
PRIMARY CHARACTERISTICS
IF(AV)
90 A
VR
1600 V
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
VF at IF
1.21 V
IFSM
1100 A
TJ max.
150 °C
Package
TO-247AD 2L, TO-247AD 3L
Circuit configuration
Single
These devices are intended for use in main rectification
(single or three phase bridge)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
VALUES
UNITS
90
A
Sinusoidal waveform
VRRM
1600
V
IFSM
1100
A
VF
90 A, TJ = 25 °C
1.21
V
-40 to +150
°C
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
1600
1700
1.5
TJ
VOLTAGE RATINGS
PART NUMBER
VS-90EPS16L-M3, VS-90APS16L-M3
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
SYMBOL
IF(AV)
IFSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
I2√t
TEST CONDITIONS
VALUES
TC = 110 °C, 180° conduction half sine wave
90
10 ms sine pulse, rated VRRM applied
915
10 ms sine pulse, no voltage reapplied
1100
10 ms sine pulse, rated VRRM applied
4185
10 ms sine pulse, no voltage reapplied
6050
t = 0.1 ms to 10 ms, no voltage reapplied
60 500
UNITS
A
A2s
A2√s
Revision: 10-Jul-2018
Document Number: 95696
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-90EPS16L-M3, VS-90APS16L-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
TEST CONDITIONS
VFM
Forward slope resistance
rt
Threshold voltage
UNITS
1.21
V
3.17
mΩ
0.73
V
TJ = 150 °C
VF(TO)
Maximum reverse leakage current
VALUES
90 A, TJ = 25 °C
TJ = 25 °C
IRM
0.1
VR = rated VRRM
TJ = 150 °C
mA
1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
VALUES
UNITS
-40 to +150
°C
DC operation
0.2
Mounting surface, smooth and greased
0.25
6
g
0.21
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Maximum Allowable Case Temperature (°C)
Marking device
150
RthJC (DC) = 0.2 °C/W
140
Ø
Conduction angle
130
120
30°
110
60°
90°
100
120°
180°
90
0
20
40
60
80
100
Case style TO-247AD 2L
90EPS16L
Case style TO-247AD 3L
90APS16L
Maximum Allowable Case Temperature (°C)
Mounting torque
°C/W
40
150
RthJC (DC) = 0.2 °C/W
140
Ø
Conduction angle
130
120
30°
60°
110
90°
100
120°
180°
DC
90
0
20
40
60
80
100
120
140
Average On-State Current (A)
Average On-State Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
160
Revision: 10-Jul-2018
Document Number: 95696
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VS-90EPS16L-M3, VS-90APS16L-M3
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Vishay Semiconductors
RMS limit
800
700
600
500
400
300
Ø
Conduction angle
200
TJ = 150 °C
0
20
100
40
60
80
1
100
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Average On-State Current (A)
Fig. 3 - Forward Power Loss Characteristics
1200
180
180°
120°
90°
60°
30°
140
120
100
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
1100
Peak Half Sine Wave
Forward Current (A)
160
RMS limit
80
Ø
Conduction angle
60
DC
40
1000
900
800
700
600
500
400
300
20
TJ = 150 °C
200
0
0
20
40
60
80
100
120
100
0.01
140
0.1
1
10
Average On-State Current (A)
Pulse Train Duration (s)
Fig. 4 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
Max. Average On-State Power Loss (W)
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
°
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
900
180°
120°
90°
60°
30°
Peak Half Sine Wave
Forward Current (A)
Max. Average On-State Power Loss (W)
1000
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
1000
100
TJ = 25 °C
TJ = 150 °C
10
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Characteristics
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 10-Jul-2018
Document Number: 95696
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-90EPS16L-M3, VS-90APS16L-M3
ZthJC - Transient Thermal Impedance (°C/W)
www.vishay.com
Vishay Semiconductors
1
0.5
0.1
0.33
0.25
0.17
0.08
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
90
A
P
S
16
L
-M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (90 = 90 A)
3
-
Circuit configuration:
A = single diode, 3 pins
E = single diode, 2 pins
4
-
Package:
P = TO-247AD
5
-
Type of silicon:
S = standard recovery rectifier
6
-
Voltage rating (16 = 1600 V)
7
-
L = long lead
8
-
Environmental digit:
• -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-90EPS16L-M3
25
500
Antistatic plastic tubes
VS-90APS16L-M3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247AD 2L
www.vishay.com/doc?95536
TO-247AD 3L
www.vishay.com/doc?95626
TO-247AD 2L
www.vishay.com/doc?95648
TO-247AD 3L
www.vishay.com/doc?95007
Revision: 10-Jul-2018
Document Number: 95696
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247AD 2L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) F P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M D BM
F P1
A
D2
Q
2xR
(2)
D1 (4)
D
1, 2
4
D
3
Thermal pad
(5) L1
C
L
See view B
(4)
E1
A
0.01 M D B M
View A - A
C
2 x b2
2xb
2x e
A1
0.10 M C A M
(b1, b3)
Plating
Base metal
D D
(c)
c1
C
C
(b, b2)
(4)
Section C - C, D - D
SYMBOL
MILLIMETERS
View B
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.65
5.31
0.183
0.209
A1
2.21
2.59
0.087
0.102
NOTES
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
E
15.29
15.87
0.602
0.625
E1
13.46
-
0.53
-
A2
1.50
2.49
0.059
0.098
e
5.46 BSC
b
0.99
1.40
0.039
0.055
ØK
0.254
b1
0.99
1.35
0.039
0.053
L
19.81
20.32
0.780
0.800
b2
1.65
2.39
0.065
0.094
L1
3.71
4.29
0.146
0.169
b3
1.65
2.34
0.065
0.092
ØP
3.56
3.66
0.14
0.144
c
0.38
0.89
0.015
0.035
Ø P1
-
6.98
-
0.275
NOTES
3
0.215 BSC
0.010
c1
0.38
0.84
0.015
0.033
Q
5.31
5.69
0.209
0.224
D
19.71
20.70
0.776
0.815
3
R
4.52
5.49
0.178
0.216
D1
13.08
-
0.515
-
4
S
D2
0.51
1.35
0.020
0.053
5.51 BSC
0.217 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 28-May-2018
Document Number: 95536
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247AD 3L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Φ P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M DBM
Φ P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
(4)
E1
A
0.01 M D B M
View A - A
See view B
2 x b2
3xb
C
2x e
b4
A1
0.10 M C A M
(b1, b3, b5)
Plating
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.46
5.46 BSC
0.254
19.81
20.32
3.71
4.29
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.53
0.215 BSC
0.010
0.780
0.800
0.146
0.169
0.14
0.144
0.275
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 06-Mar-2020
Document Number: 95626
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 09-Jul-2021
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Document Number: 91000