VS-APH3006L-M3, VS-EPH3006L-M3
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Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt®
FEATURES
• Low forward voltage drop
• Hyperfast soft recovery time
• 175 °C operating junction temperature
• Designed and qualified according to commercial
qualification
3
3
2
1
1
TO-247AC 3L
TO-247AC 2L
Base cathode
Base cathode
2, 4
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
DESCRIPTION / APPLICATIONS
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
1
Anode
3
Anode
3
Anode
1
Cathode
VS-APH3006L-M3
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
VS-EPH3006L-M3
These devices are intended for use in PFC Boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VR
600 V
VF at IF
1.4 V
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
trr typ.
27 ns
TJ max.
175 °C
Package
TO-247AC 3L, TO-247AC 2L
Circuit configuration
Single
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
600
V
Repetitive peak reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 112 °C
30
Non-repetitive peak surge current
IFSM
TC = 25 °C
220
Operating junction and storage
temperatures
TJ, TStg
A
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
VBR,
VR
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 30 A
-
2.0
2.65
IF = 30 A, TJ = 150 °C
-
1.4
1.8
VR = VR rated
-
0.02
30
TJ = 150 °C, VR = VR rated
-
-
300
IR = 100 μA
UNITS
V
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
20
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
-
nH
μA
Revision: 10-Dec-2018
Document Number: 95709
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-APH3006L-M3, VS-EPH3006L-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
Peak recovery current
SYMBOL
trr
IRRM
MIN.
TYP.
MAX.
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
TEST CONDITIONS
-
26
-
TJ = 25 °C
-
26
-
TJ = 125 °C
-
70
-
-
3.5
-
-
7.6
-
TJ = 25 °C
TJ = 125 °C
IF = 30 A
dIF/dt = 200 A/μs
VR = 200 V
UNITS
ns
A
TJ = 25 °C
-
50
-
TJ = 125 °C
-
280
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
Thermal resistance,
junction to case
RthJC
-
0.7
1.1
°C/W
Thermal resistance,
junction to ambient per leg
RthJA
Typical socket mount
-
-
70
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and
greased
-
0.5
-
-
5.5
-
g
-
0.2
-
oz.
1.2
(10)
-
2.4
(20)
kgf · cm
(lbf · in)
Reverse recovery charge
Qrr
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
SYMBOL
TEST CONDITIONS
Weight
Mounting torque
Marking device
Case style TO-247AC 3L
APH3006L
Case style TO-247AC 2L
EPH3006L
Revision: 10-Dec-2018
Document Number: 95709
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-APH3006L-M3, VS-EPH3006L-M3
Vishay Semiconductors
1000
1000
175 °C
100
100
Reverse Current - IR (μA)
IF - Instantaneous Forward Current (A)
www.vishay.com
TJ = 175 °C
10
TJ = 150 °C
TJ = 25 °C
1
0.0
150 °C
125 °C
10
100 °C
1
75 °C
0.1
50 °C
25 °C
0.01
0.001
0.0001
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
100
200
300
400
500
600
Reverse Voltage - VR (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Junction Capacitance - CT (pF)
1000
100
10
1
0
100
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Thermal Impedance ZthJC (°C/W)
10
1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
0.1
D = 0.02
Single Pulse
(Thermal Resistance)
D = 0.01
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1, Rectangular Pulse Duration (s)
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
Revision: 10-Dec-2018
Document Number: 95709
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-APH3006L-M3, VS-EPH3006L-M3
Vishay Semiconductors
180
90
170
80
160
IF = 30 A, 125 °C
70
150
60
140
trr (ns)
Allowable Case Temperature (°C)
www.vishay.com
130
120
50
40
110
30
IF = 30 A, 25 °C
100
20
90
typical value
10
100
80
0
10
20
30
40
50
1000
dIF/dt (A/μs)
Average Forward Current - IF(AV) (A)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
900
80
800
700
60
600
Qrr (nC)
Average Power Loss (W)
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
40
20
IF = 30 A, 125 °C
500
400
300
200
IF = 30 A, 25 °C
10
typical value
0
100
0
0
5
10
15
20
25
30
35
40
45
1000
dIF/dt (A/μs)
Average Forward Current - IF(AV) (A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 10-Dec-2018
Document Number: 95709
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-APH3006L-M3, VS-EPH3006L-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
E
P
H
30
06
L
-M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
• A = single diode
• E = single diode
3
-
P = TO-247
4
-
H = hyperfast recovery time
5
-
Current code (30 = 30 A)
6
-
Voltage code (06 = 600 V)
7
-
L = long lead
8
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant and termination lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
VS-APH3006L-M3
30
300
PACKAGING DESCRIPTION
Antistatic plastic tube
VS-EPH3006L-M3
30
300
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
TO-247AC 3L
www.vishay.com/doc?95599
TO-247AC 2L
www.vishay.com/doc?95598
TO-247AC 3L
www.vishay.com/doc?95593
TO-247AC 2L
www.vishay.com/doc?95592
www.vishay.com/doc?96580
Revision: 10-Dec-2018
Document Number: 95709
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-247AD 2L
DIMENSIONS in millimeters
D
A
Ejector pin hole thickness (h)
L2
E2
E1
H
c1
L
L1
Ø
A1
b1
e
SYMBOL
b
c
DIMENSIONS IN MILLIMETERS
DIMENSIONS IN INCHES
MIN.
MAX.
MIN.
MAX.
A
4.850
5.150
0.191
0.200
A1
2.200
2.600
0.087
0.102
b
1.000
1.400
0.039
0.055
b1
1.800
2.200
0.071
0.087
c
0.500
0.700
0.020
0.028
c1
1.900
2.100
0.075
0.083
D
15.450
15.750
0.608
0.620
E1
3.500 Ref.
E2
3.600 Ref.
0.138 Ref.
0.142 Ref.
L
40.900
41.300
1.610
1.626
L1
24.800
25.100
0.976
0.988
L2
20.300
20.600
0.799
0.811
Ø
7.100
7.300
0.280
0.287
e
10.900 Typ.
0.429 Typ.
H
5.980 Typ.
0.235 Typ.
h
0.000
0.300
0.000
0.012
Revision: 20-Apr-17
Document Number: 95598
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247AD 3L
DIMENSIONS in millimeters
D
A
Ejector pin hole thickness (h)
E2
L2
E1
H
c1
L
L1
Ø
A1
b2
b1
e
SYMBOL
c
b
DIMENSIONS IN MILLIMETERS
DIMENSIONS IN INCHES
MIN.
MAX.
MIN.
MAX.
0.200
A
4.850
5.150
0.191
A1
2.200
2.600
0.087
0.102
b
1.000
1.400
0.039
0.055
b1
2.800
3.200
0.110
0.126
b2
1.800
2.200
0.071
0.087
c
0.500
0.700
0.020
0.028
c1
1.900
2.100
0.075
0.083
D
15.450
15.750
0.608
0.620
E1
3.500 Ref.
E2
3.600 Ref.
0.138 Ref.
0.142 Ref.
L
40.900
41.300
1.610
1.626
L1
24.800
25.100
0.976
0.988
L2
20.300
20.600
0.799
0.811
Ø
7.100
7.300
0.280
0.287
e
5.450 Typ.
0.215 Typ.
H
5.980 Typ.
0.235 Typ.
h
0.000
0.300
0.000
0.012
Revision: 20-Apr-17
Document Number: 95599
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17
1
Document Number: 91000
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