VS-APU3006-N3

VS-EPU6006-N3, VS-APU6006-N3 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt® FEATURES • Ultrafast recovery time • Low forward voltage drop 1 1 • 175 °C operating junction temperature 2 3 • Designed and qualified according to JEDEC®-JESD 47 3 TO-247AC 2L TO-247AC 3L • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Cathode to base 2 Cathode to base 2 DESCRIPTION / APPLICATIONS 1 Cathode 3 Anode VS-EPU6006-N3 VS-EPU60/VS-APU60... series are the state of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ultrafast recovery 3 Anode 1 Anode time. VS-APU6006-N3 The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. PRIMARY CHARACTERISTICS IF(AV) 60 A VR 600 V VF at IF 1.05 V trr typ. 32 ns These devices are intended for use in the output rectification stage of SMPS, welding, UPS, DC/DC converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. TJ max. 175 °C Package TO-247AC 2L, TO-247AC 3L Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 600 V Repetitive peak reverse voltage VRRM Average rectified forward current in DC IF(AV) TC = 116 °C 60 Single pulse forward current IFSM TC = 25 °C, tp = 10 ms 600 Operating junction and storage temperatures TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 60 A - 1.2 1.5 IF = 60 A, TJ = 125 °C - 1.1 1.3 1.2 IR = 100 μA IF = 60 A, TJ = 175 °C - 1.05 VR = VR rated - - 30 TJ = 150 °C, VR = VR rated - - 200 VR = 600 V - 38 - UNITS V μA pF Revision: 29-Nov-2019 Document Number: 94794 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EPU6006-N3, VS-APU6006-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V Reverse recovery time Peak recovery current trr IRRM MIN. TYP. MAX. - 32 43 TJ = 25 °C - 110 - TJ = 125 °C - 200 - TJ = 25 °C TJ = 125 °C IF = 60 A dIF/dt = 200 A/μs VR = 200 V - 10 - - 19 - UNITS ns A TJ = 25 °C - 530 - TJ = 125 °C - 1900 - MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C Thermal resistance, junction to case RthJC - - 0.65 Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth, and greased - 0.5 - - 6 - g - 0.21 - oz. 6 (5) - 1.2 (10) kgf. cm (lbf ⋅ in) Reverse recovery charge Qrr nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight Mounting torque Marking device Case style TO-247AC 2L EPU6006 Case style TO-247AC 3L APU6006 °C/W Revision: 29-Nov-2019 Document Number: 94794 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EPU6006-N3, VS-APU6006-N3 Vishay Semiconductors 1000 1000 175 °C 100 TJ = 175 °C 10 TJ = 150 °C TJ = 25 °C 1 0.0 100 IR - Reverse Current (µA) IF - InstantaneousForward Current (A) www.vishay.com 150 °C 10 125 °C 1 0.1 25 °C 0.01 0.001 0.5 1.0 1.5 2.0 0 2.5 100 200 300 400 500 600 VR - Reverse Voltage (V) VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (A) 1 D = 0.5 D = 0.2 0.1 D = 0.1 Single Pulse (Thermal Resistance) D = 0.05 D = 0.02 D = 0.01 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 29-Nov-2019 Document Number: 94794 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EPU6006-N3, VS-APU6006-N3 Vishay Semiconductors 180 260 170 240 160 220 150 200 140 180 trr (ns) Allowable Case Temperature (°C) www.vishay.com 130 DC 120 160 140 IF = 60 A, 25 °C 120 110 100 100 Square wave (d = 0.5) rated VR applied 90 80 60 80 40 100 70 0 20 40 60 80 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 4500 120 RMS Limit 4000 100 3500 80 IF = 60 A, 125 °C 3000 Qrr (nC) Average Power Loss (W) IF = 60 A, 125 °C D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 60 40 20 20 40 60 80 2000 1500 IF = 60 A, 25 °C 1000 500 0 0 2500 100 typical value 0 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) Revision: 29-Nov-2019 Document Number: 94794 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EPU6006-N3, VS-APU6006-N3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (4) Qrr - area under curve defined by trr and IRRM (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- E P U 60 06 -N3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Circuit configuration: A = single diode, 3 pins E = single diode, 2 pins 3 - P = TO-247AC 4 - U = ultrafast recovery time 5 - Current code (60 = 60 A) 6 - Voltage code (06 = 600 V) 7 - Environmental digit: -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-EPU6006-N3 25 500 Antistatic plastic tube VS-APU6006-N3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-247AC 2L www.vishay.com/doc?96144 TO-247AC 3L www.vishay.com/doc?96138 TO-247AC 2L www.vishay.com/doc?95648 TO-247AC 3L www.vishay.com/doc?95007 Revision: 29-Nov-2019 Document Number: 94794 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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