VS-C40CP07L-M3

VS-C40CP07L-M3 www.vishay.com Vishay Semiconductors 650 V Power SiC Merged PIN Schottky Diode, 2 x 20 A Base common cathode 2 1 2 1 Anode 3 TO-247AD 3L 2 3 Anode Common Cathode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models Models Application Notes FEATURES • Majority carrier diode using Schottky technology on SiC wide band gap material • Positive VF temperature coefficient, for easy paralleling • Virtually no recovery tail and no switching losses • Temperature invariant switching behavior • 175 °C maximum operating junction temperature • MPS structure for high ruggedness to forward current surge events • Meets JESD 201 class 1A whisker test • Solder Bath temperature 275 °C maximum, 10 s per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior. Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters. 2 x 20 A VR 650 V VF at IF at 150 °C 1.55 V TJ max. 175 °C IR at VR at 175 °C 35 μA QC (VR = 400 V) 68 nC Package TO-247AD 3L Circuit configuration Common cathode MECHANICAL DATA Case: TO-247AD 3L Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Mounting torque: 10 in-lbs maximum ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL Peak repetitive reverse voltage VRRM Average rectified forward current, per leg IF(AV) DC blocking voltage VDC Repetitive peak surge current, per leg IFRM Non-repetitive peak forward surge current, per leg IFSM Power dissipation, per leg Ptot (1) I2t value, per leg i Operating junction and storage temperatures 2 dt TEST CONDITIONS TC = 140 °C (DC) VALUES UNITS 650 V 20 A 650 V TC = 25 °C, f = 50 Hz, square wave, DC = 25 % 92 A TC = 25 °C, tp = 10 ms, half sine wave 160 TC = 110 °C, tp = 10 ms, half sine wave 140 TC = 25°C 170 TC = 110 °C 74 TC = 25°C 128 TC = 110 °C 98 TJ(2), TStg -55 to +175 A W A2s °C Notes (1) Based on maximum R th (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA Revision: 16-Apr-2021 Document Number: 96722 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-C40CP07L-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Forward voltage, per leg TEST CONDITIONS VF Reverse leakage current, per leg IR Total capacitance, per leg C Total capacitive charge, per leg QC MIN. TYP. MAX. IF = 20 A - 1.40 1.70 IF = 20 A, TJ = 150 °C - 1.55 1.9 IF = 20 A, TJ = 175 °C - 1.60 - UNITS V VR = VR rated - - 100 VR = VR rated, TJ = 150 °C - - 250 VR = VR rated, TJ = 175 °C - 35 - VR = 1 V, f = 1 MHz - 1040 - VR = 400 V, f = 1 MHz - 110 - VR = 400 V, f = 1 MHz - 68 - nC MIN. TYP. MAX. UNITS - 0.63 0.88 - 0.38 0.53 μA pF THERMAL - MECHANICAL SPECIFICATIONS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL Thermal resistance, junction-to-case per leg TEST CONDITIONS RthJC per device Marking device C40CP07L Axis Title Axis Title 10000 40 10000 10000 1000 1000 100 100 30 25 1000 TJ = 25 °C TJ = 125 °C TJ = 150 °C TJ = 175 °C 20 15 100 10 5 10 0 0 0.5 1.0 1.5 2.0 1st line 2nd line 35 2nd line CT - Junction Capacitance (pF) TJ = -55 °C 1st line 2nd line 2nd line IF - Instantaneous Forward Current (A) °C/W TJ = 25 °C f = 1.0 MHz 10 0.1 2.5 1 10 100 10 1000 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics, per leg Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage, per leg Axis Title Axis Title 10000 100 1000 10000 TJ = 25 °C 1000 TJ = 150 °C TJ = 125 °C TJ = 25 °C TJ = -55 °C 0.01 2nd line IFSM (A) 0.1 1000 1st line 2nd line TJ = 175 °C 1 1st line 2nd line 2nd line IR - Reverse Current (µA) 10 TJ = 110 °C 100 100 100 0.001 10 0.0001 0 100 200 300 400 500 600 700 10 0.0001 0.001 10 0.01 VR - Reverse Voltage (V) tp (s) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage, per leg Fig. 4 - Non-Repetitive Peak Forward Surge Current vs. Pulse Duration, Per Leg (Square Wave) Revision: 16-Apr-2021 Document Number: 96722 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-C40CP07L-M3 www.vishay.com Vishay Semiconductors 10000 1 1000 1st line 2nd line ZthJC - Thermal Impedance Junction to Case (°C/W) Axis Title 10 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 DC 0.1 0.01 0.00001 0.0001 100 10 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 5 - Typical Thermal Impedance ZthJC Characteristics, per leg Axis Title Axis Title 10000 10000 30 170 25 1000 155 150 145 140 100 135 130 1000 20 1st line 2nd line 160 2nd line Capacitive Energy (µJ) 165 1st line 2nd line 2nd line Allowable Case Temperature (°C) 175 15 100 10 TJ = 25 °C f = 1.0 MHz 5 125 10 120 0 5 10 15 20 10 0 25 0 100 200 300 400 500 600 700 IF(AV) - Average Forward Output Current (A) Reverse Voltage (V) Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current, per leg Fig. 8 - Typical Capacitive Energy vs. Reverse Voltage, per leg Axis Title Axis Title 10000 250 100 10000 200 RthJC typ. 100 100 RthJC max. 50 70 1000 60 1st line 2nd line 1000 150 2nd line Capacitive Charge (nC) 80 1st line 2nd line 2nd line Allowable Input Power (W) 90 50 40 100 TJ = 25 °C f = 1.0 MHz 30 20 10 10 0 25 50 75 100 125 150 175 10 0 0 100 200 300 400 500 600 700 Case Temperature (°C) Reverse Voltage (V) Fig. 7 - Forward Power Loss Characteristics, per leg Fig. 9 - Typical Capacitive Charge vs. Reverse Voltage, per leg Revision: 16-Apr-2021 Document Number: 96722 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-C40CP07L-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- C 40 C P 07 L -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - C = SiC diode 3 - Current rating (40 = 40 A) 4 - C = common cathode 5 - P = package TO-247 6 - Voltage rating: (07 = 650 V) 7 - L = long lead 8 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION PREFERRED P/N BASE QUANTITY MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-C40CP07L-M3 25/tube 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95626 Part marking information www.vishay.com/doc?95007 SPICE model www.vishay.com/doc?96888 Revision: 16-Apr-2021 Document Number: 96722 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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