VS-C4PH6006LHN3

VS-C4PH6006LHN3 www.vishay.com Vishay Semiconductors Hyperfast Soft Recovery Diode, 2 x 30 A FRED Pt® Gen 4 FEATURES Base common cathode 2 • Gen 4 FRED Pt® technology • Low IRRM and reverse recovery charge • Very low forward voltage drop • Polyimide passivated chip for high reliability standard 1 2 • 175 °C operating junction temperature 3 TO-247AD 3L • AEC-Q101 qualified, meets JESD 201 class 1 whisker test 1 3 Anode Anode 2 1 2 Common cathode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY DESCRIPTION Package TO-247AD 3L IF(AV) 2 x 30 A VR 600 V VF at IF 1.37 V trr typ. see Recovery table TJ max. 175 °C Diode variation Common cathode Gen 4 Fred Pt technology, state of the art, ultralow VF, soft switching optimized for Discontinuous (Critical) Mode (DCM) and IGBT F/W diode. The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching element and snubbers.   ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS MAX. UNITS 600 V VR Average rectified forward current IF(AV) TC = 122 °C 30 Non-repetitive peak surge current, per leg IFSM TC = 25 °C, tp = 8.3 ms, half sine wave 240 Operating junction and storage temperatures TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 30 A - 1.65 2 IF = 60 A - 1.95 - IF = 30 A, TJ = 125 °C - 1.44 - IF = 60 A, TJ = 125 °C - 1.78 - IF = 30 A, TJ = 150 °C - 1.37 1.6 IF = 60 A, TJ = 150 °C - 1.68 - VR = VR rated - - 50 TJ = 125 °C, VR = VR rated - - 500 VR = 600 V - 18.3 - IR = 100 μA UNITS V μA pF Revision: 21-Feb-17 Document Number: 95954 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-C4PH6006LHN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS TJ = 25 °C trr Peak recovery current TJ = 125 °C TJ = 25 °C IRRM Reverse recovery charge IF = 30 A dIF/dt = 1000 A/μs TJ = 125 °C VR = 400 V TJ = 25 °C Qrr TJ = 125 °C MIN. TYP. MAX. - 55 - UNITS - 75 - - 13 - - 23 - - 500 - - 1250 - MIN. TYP. MAX. UNITS - - 1 °C/W - 0.4 - - 6.0 - g - 0.21 - oz. 6.0 (5) - 12 (20) kgf · cm (lbf · in) ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Thermal resistance, case to heat sink RthCS TEST CONDITIONS Mounting surface, flat, smooth, and greased Weight Mounting torque Case style TO-247AD 3L 1000 C4PH6006LH 1000 175 °C IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Marking device 100 TJ = 175 °C 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 150 °C 100 125 °C 10 1 25 °C 0.1 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Revision: 21-Feb-17 Document Number: 95954 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-C4PH6006LHN3 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 10 0.50 0.20 0.10 0.05 0.02 0.01 1 0.1 Single pulse 0.01 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 110 100 160 120 80 70 Square wave (D = 0.50) 80 % rated VR applied 100 25 °C 60 See note (1) 80 50 0 10 20 30 40 50 400 500 600 700 800 900 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 5 - Max. Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 180 1400 160 RMS limit 125 °C 1200 140 1000 120 Qrr (nC) Average Power Loss (W) Tj = 125 °C 90 DC 140 trr (ns) Allowable Case Temperature (°C) 180 100 D = 0.01 D = 0.05 D = 0.10 D = 0.20 D = 0.50 80 60 40 800 600 25 °C 400 20 200 0 0 10 20 30 40 50 60 70 80 90 400 500 600 700 800 900 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see Fig. 5) PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR = rated VR (1) Revision: 21-Feb-17 Document Number: 95954 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-C4PH6006LHN3 www.vishay.com Vishay Semiconductors 30 25 125 °C Irec (A) 20 15 Tj = 25 °C 10 5 0 400 500 600 700 800 900 1000 dIF/dt (A/μs) Fig. 9 - Typical Reverse Current vs. dIF/dt ORDERING INFORMATION TABLE Device code VS- C 4 P H 60 06 L H N3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Circuit configuration: C = common cathode 3 - FRED Gen 4 4 - P = TO-247 package 5 - Process type: 6 - Current rating (60 = 60 A) 7 - Voltage rating (06 = 600 V) 8 - L = long lead 9 - H = AEC-Q101 qualified 10 - Environmental digit: N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free H = hyperfast recovery ORDERING INFORMATION (Example) PREFERRED P/N VS-C4PH6006LHN3 QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions TO-247AD 3L www.vishay.com/doc?95626 Part marking information TO-247AD 3L www.vishay.com/doc?95007 Revision: 21-Feb-17 Document Number: 95954 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 3L DIMENSIONS in millimeters and inches A A (3) (6) Φ P E B (2) R/2 A2 S (Datum B) Ø K M DBM Φ P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L (4) E1 A 0.01 M D B M View A - A See view B 2 x b2 3xb C 2x e b4 A1 0.10 M C A M (b1, b3, b5) Plating Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 19.81 20.32 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.53 0.215 BSC 0.010 0.780 0.800 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 06-Mar-2020 Document Number: 95626 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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