VS-C4PU6006L-N3
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Vishay Semiconductors
Ultrafast Soft Recovery Diode,
2 x 30 A FRED Pt® Gen 4
FEATURES
Base
common
cathode
2
• Gen 4 FRED Pt® technology
• Low IRRM and reverse recovery charge
• Very low forward voltage drop
1
• Polyimide passivated chip for high reliability
standard
2
3
TO-247AD 3L
• 175 °C operating junction temperature
1
Anode
1
• Designed and qualified according to JEDEC®-JESD 47
3
Anode
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
PRIMARY CHARACTERISTICS
IF(AV)
Gen 4 Fred technology, state of the art, ultralow VF, soft
switching optimized for Discontinuous (Critical) Mode (DCM)
and IGBT F/W diode.
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce power dissipation in the switching element and
snubbers.
2 x 30 A
VR
600 V
VF at IF
1.19 V
trr typ.
See Recovery table
TJ max.
175 °C
Package
TO-247AD 3L
Circuit configuration
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
600
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 131 °C
30
Non-repetitive peak surge current, per leg
IFSM
TC = 25 °C, tp = 8.3 ms, half sine wave
240
Operating junction and storage temperature
TJ, TStg
A
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
Forward voltage
SYMBOL
VBR, VR
VF
Reverse leakage current
IR
Junction capacitance
CT
TEST CONDITIONS
IR = 100 μA
MIN.
TYP.
MAX.
600
-
-
IF = 30 A
-
1.36
1.6
IF = 60 A
-
1.6
-
IF = 30 A, TJ = 125 °C
-
1.23
-
IF = 60 A, TJ = 125 °C
-
1.5
-
IF = 30 A, TJ = 150 °C
-
1.19
1.35
IF = 60 A, TJ = 150 °C
-
1.48
-
VR = VR rated
-
-
50
TJ = 125 °C, VR = VR rated
-
-
500
VR = 600 V
-
18.3
-
UNITS
V
μA
pF
Revision: 19-Feb-2019
Document Number: 95941
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
MIN.
TYP.
MAX.
TJ = 25 °C
TEST CONDITIONS
-
65
-
TJ = 125 °C
-
90
-
-
18
-
-
32
-
IF = 30 A
dIF/dt = 1000 A/μs
VR = 400 V
TJ = 25 °C
TJ = 125 °C
Qrr
UNITS
ns
A
TJ = 25 °C
-
850
-
TJ = 125 °C
-
1850
-
MIN.
TYP.
MAX.
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Thermal resistance, junction to case
RthJC
Thermal resistance, junction to ambient
RthJA
Thermal resistance, case to heat sink
RthCS
TEST CONDITIONS
Typical socket mount
Weight
Mounting torque
-
-
1
-
-
40
-
0.4
-
-
6.0
-
g
-
0.21
-
oz.
6.0
(5)
-
12
(10)
kgf · cm
(lbf · in)
Case style TO-247AD 3L
1000
°C/W
C4PU3006L
1000
175 °C
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Marking device
UNITS
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
100
150 °C
125 °C
10
1
25 °C
0.1
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
200
400
600
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 19-Feb-2019
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CT - Junction Capacitance (pF)
1000
100
10
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
Single pulse
0.01
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
180
160
170
Average Power Loss (W)
Allowable Case Temperature (°C)
180
160
DC
150
140
130
Square wave (D = 0.50)
80 % rated VR applied
120
RMS limit
140
120
100
D = 0.01
D = 0.05
D = 0.10
D = 0.20
D = 0.50
80
60
40
20
See note (1)
110
0
0
10
20
30
40
50
0
10
20
30
40
50
60
70
80
90
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Note
(1) Formula used: T = T - (P + P
C
J
d
dREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see Fig.5)
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR = rated VR
Revision: 19-Feb-2019
Document Number: 95941
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VS-C4PU6006L-N3
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140
2000
130
1800
120
1600
110
1400
125 °C
100
Qrr (nC)
trr (ns)
125 °C
90
25 °C
80
1200
1000
25 °C
800
70
600
60
400
50
400
500
600
700
800
900
400
1000
500
600
700
800
900
1000
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
40
Irec (A)
30
125 °C
20
25 °C
10
0
400
500
600
700
800
900
1000
dIF/dt (A/μs)
Fig. 9 - Typical Reverse Current vs. dIF/dt
Revision: 19-Feb-2019
Document Number: 95941
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-C4PU6006L-N3
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ORDERING INFORMATION TABLE
Device code
VS-
C
4
P
U
60
06
L
-N3
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Circuit configuration:
C = common diode
3
-
FRED Pt Gen 4
4
-
P = TO-247 package
5
-
Process type:
U = ultrafast recovery
6
-
Current rating (60 = 2 x 30 A)
7
-
Voltage rating (06 = 600 V)
8
-
Package: L = long lead
9
-
Environmental digit:
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-C4PU6006L-N3
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95626
Part marking information
www.vishay.com/doc?95007
Revision: 19-Feb-2019
Document Number: 95941
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-247AD 3L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Φ P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M DBM
Φ P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
(4)
E1
A
0.01 M D B M
View A - A
See view B
2 x b2
3xb
C
2x e
b4
A1
0.10 M C A M
(b1, b3, b5)
Plating
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.46
5.46 BSC
0.254
19.81
20.32
3.71
4.29
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.53
0.215 BSC
0.010
0.780
0.800
0.146
0.169
0.14
0.144
0.275
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 06-Mar-2020
Document Number: 95626
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Disclaimer
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