VS-C5TH3012-M3

VS-C5TH3012-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 15 A FRED Pt® G5 FEATURES Base common cathode 2 • Hyperfast and optimized Qrr • Best in class forward voltage drop and switching losses trade off • Optimized for high speed operation 1 2 Anode 3 TO-220AB 3L • 175 °C maximum operating junction temperature Anode 2 1 Common 3 cathode • Polyimide passivation • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models DESCRIPTION / APPLICATIONS Application Notes Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for high frequency converters, both soft switched / resonant. Specifically designed to improve efficiency of PFC and output rectification stages of EV / HEV battery charging stations, booster stage of solar inverters and UPS applications, these devices are perfectly matched to operate with MOSFETs or high speed IGBTs. PRIMARY CHARACTERISTICS IF(AV), per leg 15 A VR, per leg 1200 V VF at IF at 125 °C, per leg 1.7 V trr 37 ns TJ max. 175 °C Package TO-220AB 3L Circuit configuration Common cathode MECHANICAL DATA Case: TO-220AB 3L Molding compound meets UL 94 V-0 flammability rating Terminals: J-STD-002 matte tin plated leads, solderable per Polarity: as per marking device details ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 1200 V Repetitive peak reverse voltage, per leg VRRM Average rectified forward current, per leg IF(AV) TC = 110 °C, D = 0.50 Repetitive forward current, per leg IFRM TC = 110 °C, D = 0.50, 20 kHz 30 Non-repetitive peak surge current, per leg IFSM TC = 45 °C, tp = 10 ms, sine wave 125 Operating junction and storage temperature TJ, TStg 15 A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage, per leg Forward voltage, per leg SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 1200 - - IF = 15 A - 1.9 2.5 IR = 100 μA IF = 15 A, TJ = 125 °C - 1.7 - VR = VR rated - - 50 TJ = 125 °C, VR = VR rated - - 500 UNITS V Reverse leakage current, per leg IR Junction capacitance, per leg CT VR = 200 V - 10 - pF Series inductance, per leg LS Measured to lead 5 mm from package body - 8 - nH μA Revision: 16-May-2022 Document Number: 96613 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-C5TH3012-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time, per leg Peak recovery current, per leg SYMBOL trr IRRM Reverse recovery charge, per leg Qrr Reverse recovery time, per leg trr Peak recovery current, per leg IRRM Reverse recovery charge, per leg Qrr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V - 37 50 TJ = 25 °C - 95 - TJ = 125 °C - 146 - - 14 - - 19 - TJ = 25 °C TJ = 125 °C IF = 10 A dIF/dt = 600 A/μs VR = 400 V TJ = 25 °C - 545 - TJ = 125 °C - 1200 - TJ = 25 °C - 75.5 - TJ = 125 °C - 100 - - 23 - - 35 - TJ = 25 °C TJ = 125 °C IF = 15 A dIF/dt = 1000 A/μs VR = 800 V UNITS ns A nC ns A TJ = 25 °C - 935 - TJ = 125 °C - 1985 - MIN. TYP. MAX. UNITS - - 1.7 °C/W - 2.0 - g 6.0 (5.0Z - 12 (10) kgf · cm (lbf · in) -55 - 175 °C nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Thermal resistance, junction-to-case, per leg SYMBOL TEST CONDITIONS RthJC Weight Mounting torque Maximum junction and storage temperature range Marking device TJ, TStg Case style TO-220AB 3L C5TH3012 Revision: 16-May-2022 Document Number: 96613 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-C5TH3012-M3 Vishay Semiconductors 100 100 CT - Junction Capacitance (pF) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 175 °C 10 TJ = 125 °C TJ = 25 °C TJ = -40 °C 1 10 1 0.1 0 1.0 2.0 3.0 0 4.0 200 VF - Forward Voltage Drop (V) Allowable Solder Pad Temperature (°C) 1000 IR - Reverse Current (µA) TJ = 175 °C TJ = 150 °C TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0 200 400 600 800 600 800 1000 1200 Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage, Per Leg Fig. 1 - Forward Voltage Drop Characteristics, Per Leg 100 400 VR - Reverse Voltage (V) 1000 1200 180 170 160 150 DC 140 130 120 110 Square wave (D = 0.50) rated VR applied 100 90 80 0 VR - Reverse Voltage (V) 2 4 6 8 10 12 14 16 IF(AV) - Average Forward Current (A) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current, Per Leg Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage, Per Leg Average Power Loss (W) 50 RMS limit 45 40 35 30 D= 0.10 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 25 20 15 10 5 0 0 5 10 15 20 25 IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics, Per Leg Revision: 16-May-2022 Document Number: 96613 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-C5TH3012-M3 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.1 0.01 0.75 0.50 0.33 0.25 0.2 0.1 DC 0.001 0.00001 0.0001 0.001 0.01 0.1 t1 - Rectangular Pulse Duration (s) Fig. 6 - Transient Thermal Impedance, Junction to Case, Per Leg 300 2500 250 2000 10 A, 400 V 15 A, 800 V Qrr (nC) trr (ns) 200 150 15 A, 800 V 1500 1000 10 A, 400 V 100 50 500 TJ = 125 °C TJ = 125 °C 0 0 100 1000 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt, Per Leg Fig. 8 - Typical Stored Charge vs. dIF/dt, Per Leg 40 35 TJ = 125 °C 30 Irec (A) 25 15 A, 800 V 20 15 10 10 A, 400 V 5 0 100 1000 dIF/dt (A/µs) Fig. 9 - Typical Recovery Current vs. dIF/dt, Per Leg Revision: 16-May-2022 Document Number: 96613 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-C5TH3012-M3 www.vishay.com Vishay Semiconductors (3) trr ta IF tb t0 0 t10 % 0.1 IRRM (2) Qrr (4) IRRM di(rec)M/dt (5) (1) diF/dt Fig. 10 - Reverse Recovery Waveform and Definitions Notes (1) di /dt - rate of change of current through zero crossing F (2) I RRM - peak reverse recovery current (3) t - reverse recovery time measured from t , crossing point of negative going I , to point t rr 0 F 10%, 0.1 IRRM (4) Q - area under curve defined by t and t rr 0 10 % t 10 % Q rr =  I ( t ) dt t0 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr ORDERING INFORMATION TABLE Device code VS- C 5 T H 30 12 -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - C = common cathode 3 - 5 = FRED generation 5 4 - Package: T = TO-220AB 3L 5 - H = hyperfast recovery 6 - Current rating (30 = 30 A) 7 - Voltage rating (12 = 1200 V) 8 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION VS-C5TH3012-M3 50 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96154 Part marking information www.vishay.com/doc?95028 Revision: 16-May-2022 Document Number: 96613 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-220AB 3L DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 D (H1) H1 C D2 (6) D 2 3 D L1 (2) C (6) c 3xb D1 3 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AB SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 14-Mar-2022 Document Number: 96154 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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