VS-CPU6006-N3
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Vishay Semiconductors
Ultrafast Rectifier, 2 x 30 A FRED Pt®
FEATURES
Base
common
cathode
2
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Designed and qualified according to
JEDEC®-JESD 47
1
2
3
TO-247AC 3L
Anode 1
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Anode 2
1
3
DESCRIPTIONS/APPLICATIONS
VS-CPU60... series are the state of the art ultrafast recovery
rectifiers designed with optimized performance of forward
voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VR
600 V
VF at IF
1.75 V
trr typ.
26 ns
TJ max.
175 °C
Package
TO-247AC 3L
Circuit configuration
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
600
V
Repetitive peak reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 131 °C
60
Non-repetitive peak surge current per leg
IFSM
TJ = 25 °C, tp = 10 ms
250
Operating junction and storage temperatures
TJ, TStg
A
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
Reverse leakage current
IR
Junction capacitance
CT
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 30 A
-
1.4
1.75
IF = 30 A, TJ = 150 °C
-
1.1
1.4
VR = VR rated
-
0.02
30
TJ = 150 °C, VR = VR rated
-
30
200
VR = 600 V
-
20
-
IR = 100 μA
UNITS
V
µA
pF
Revision: 09-Oct-2019
Document Number: 94795
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VS-CPU6006-N3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
MIN.
TYP.
MAX.
-
26
34
UNITS
TJ = 25 °C
-
42
-
TJ = 125 °C
-
100
-
-
5
-
-
10
-
TJ = 25 °C
-
125
-
TJ = 125 °C
-
580
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
-
0.7
1
Thermal resistance,
junction to ambient per leg
RthJA
Typical socket mount
-
-
70
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth, and greased
-
0.5
-
-
6.0
-
-
0.21
-
oz.
-
12
(10)
kgf cm
(lbf in)
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
TJ = 25 °C
TJ = 125 °C
IF = 30 A
dIF/dt = - 200 A/μs
VR = 200 V
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
SYMBOL
TEST CONDITIONS
Weight
6.0
(5.0)
Mounting torque
Marking device
Case style TO-247AC 3L
°C/W
g
CPU6006
Revision: 09-Oct-2019
Document Number: 94795
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-CPU6006-N3
Vishay Semiconductors
1000
1000
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
www.vishay.com
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 25 °C
1
0.0
175 °C
100
150 °C
10
125 °C
100 °C
1
75 °C
0.1
50 °C
25 °C
0.01
0.001
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
600
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
1000
100
10
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.5
0.1
0.01
1E-05
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
1E-04
1E-03
1E-02
1E-01
1E+00
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 09-Oct-2019
Document Number: 94795
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VS-CPU6006-N3
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Vishay Semiconductors
60
170
Average Power Loss (W)
Allowable Case Temperature (°C)
180
160
150
140
DC
130
120
110
Square wave (d = 0.5)
rated VR applied
100
RMS Limit
50
40
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
30
20
10
90
0
80
0
10
20
30
40
0
50
10
20
30
40
50
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Forward Power Loss Characteristics
140
1800
typical value
1600
120
1400
IF = 30 A, 125 °C
1200
Qrr (nC)
trr (ns)
100
80
60
40
IF = 30 A, 125 °C
1000
800
600
IF = 30 A, 25 °C
400
IF = 30 A, 25 °C
200
typical value
20
100
0
1000
100
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
(1)
Revision: 09-Oct-2019
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-CPU6006-N3
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Vishay Semiconductors
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
C
P
U
60
06
-N3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Circuit configuration:
C = common cathode
3
-
P = TO-247AC
4
-
U = ultrafast recovery time
5
-
Current code (60 = 2 x 30 A)
6
-
Voltage code (06 = 600 V)
7
-
Environmental digit:
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-CPU6006-N3
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96138
Part marking information
www.vishay.com/doc?95007
Revision: 09-Oct-2019
Document Number: 94795
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-247AC 3L
DIMENSIONS in millimeters and inches
A
A
E (3)
B
A2
S
R/2 (2)
(Datum B)
Ø P (6)
Ø P1
Ø K M DBM
A
Q
D2
2 x R (2)
D1 (4)
D
Thermal pad
2
1
4
D
3
L1 (5)
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
C
2x e
A1
b4
E1 (4)
0.01 M D B M
(b1, b3, b5)
Plating
View A - A
Base metal
D DE
(c)
c1
(b, b2, b4)
C
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.17
1.37
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
C
(4)
View B
Section C - C, D - D, E - E
SYMBOL
E
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.046
0.054
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.35
15.29
15.87
13.46
5.46 BSC
0.254
14.20
16.10
3.71
4.29
3.56
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.053
0.602
0.625
0.53
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.14
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension Q
Revision: 20-Jun-17
Document Number: 96138
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2023
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Document Number: 91000
