VS-E4PH3006LHN3
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Vishay Semiconductors
Hyperfast Soft Recovery Diode,
30 A FRED Pt® Gen 4
FEATURES
• Gen 4 FRED Pt® technology
Base cathode
2
• Low IRRM and reverse recovery charge
• Very low forward voltage drop
2
• Polymide passivated chip for high reliability
standard
1
3
TO-247AD 2L
3
Anode
1
Cathode
• 175 °C operating junction temperature
• AEC-Q101 qualified, meets JESD 201 class 1
whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
IF(AV)
30 A
VR
600 V
DESCRIPTION
VF at IF
1.37 V
trr typ.
see Recovery table
Gen 4 Fred technology, state of the art, ultrafast VF, soft
switching optimized for Discontinuous (Critical) Mode (DCM)
and IGBT F/W diode.
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
TJ max.
175 °C
Package
TO-247AD 2L
Diode variation
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
SYMBOL
TEST CONDITIONS
MAX.
UNITS
600
V
VR
Average rectified current
IF(AV)
TC = 122 °C
30
Single pulse forward current
IFSM
TC = 25 °C, tp = 8.3 ms half sine wave
240
Operating junction and storage temperatures
TJ, TStg
A
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
Forward voltage
SYMBOL
VBR, VR
VF
Reverse leakage current
IR
Junction capacitance
CT
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 30 A
-
1.65
2
IF = 60 A
-
1.95
-
IF = 30 A, TJ = 125 °C
-
1.44
-
IF = 60 A, TJ = 125 °C
-
1.78
-
IF = 30 A, TJ = 150 °C
-
1.37
1.6
IF = 60 A, TJ = 150 °C
-
1.68
-
VR = VR rated
-
-
50
TJ = 150 °C, VR = VR rated
-
-
500
VR = 600 V
-
18.3
-
IR = 100 μA
UNITS
V
μA
pF
Revision: 19-Jan-17
Document Number: 95942
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
MIN.
TYP.
MAX.
TJ = 25 °C
TEST CONDITIONS
-
55
-
TJ = 125 °C
-
75
-
-
13
-
-
23
-
-
500
-
-
1250
-
MIN.
TYP.
MAX.
UNITS
-
-
1
°C/W
-
0.4
-
-
6.0
-
g
-
0.21
-
oz.
6.0
(5)
-
12
(20)
kgf · cm
(lbf · in)
IF = 30 A
TJ = 25 °C
dIF/dt = 1000 A/μs
TJ = 125 °C
VR = 400 V
TJ = 25 °C
Qrr
TJ = 125 °C
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Thermal resistance, junction to case
RthJC
Thermal resistance, case to heat sink
RthCS
TEST CONDITIONS
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Case style TO-247AD 2L
1000
E4PH3006LH
1000
175 °C
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Marking device
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
150 °C
100
125 °C
10
1
25 °C
0.1
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
200
400
600
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
100
10
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 19-Jan-17
Document Number: 95942
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
single pulse
0.01
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
110
100
160
120
80
25°C
70
Square wave (D = 0.50)
80 % rated VR applied
100
60
See note (1)
80
50
0
10
20
30
40
50
400
500
600
700
800
900
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/μs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
180
1400
160
RMS limit
125 °C
1200
140
1000
120
Qrr (nC)
Average Power Loss (W)
Tj = 125 °C
90
DC
140
trr (ns)
Allowable Case Temperature (°C)
180
100
D = 0.01
D = 0.05
D = 0.10
D = 0.20
D = 0.50
80
60
40
800
600
25 °C
400
20
200
0
0
10
20
30
40
50
60
70
80
90
400
500
600
700
800
900
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/μs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 19-Jan-17
Document Number: 95942
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-E4PH3006LHN3
www.vishay.com
Vishay Semiconductors
30
25
125°C
Irec (A)
20
15
Tj = 25 °C
10
5
0
400
500
600
700
800
900
1000
dIF/dt (A/μs)
Fig. 9 - Typical Reverse Current vs. dIF/dt
ORDERING INFORMATION TABLE
Device code
VS-
E
4
P
H
30
06
L
H
N3
1
2
3
4
5
6
7
8
9
10
1
-
Vishay Semiconductors product
2
-
Circuit configuration:
E = single diode, 2 pins
3
-
FRED Pt Gen 4
4
-
P = TO-247 package
5
-
Process type:
H = hyperfast recovery
6
-
Current rating (30 = 30 A)
7
-
Voltage rating (06 = 600 V)
8
-
L = long lead
9
-
H = AEC-Q101 qualified
10
-
Environmental digit:
N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-E4PH3006LHN3
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
TO-247AD 2L
www.vishay.com/doc?95536
Part marking information
TO-247AD 2L
www.vishay.com/doc?95648
Revision: 19-Jan-17
Document Number: 95942
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-247AD 2L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) F P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M D BM
F P1
A
D2
Q
2xR
(2)
D1 (4)
D
1, 2
4
D
3
Thermal pad
(5) L1
C
L
See view B
(4)
E1
A
0.01 M D B M
View A - A
C
2 x b2
2xb
2x e
A1
0.10 M C A M
(b1, b3)
Plating
Base metal
D D
(c)
c1
C
C
(b, b2)
(4)
Section C - C, D - D
SYMBOL
MILLIMETERS
View B
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.65
5.31
0.183
0.209
A1
2.21
2.59
0.087
0.102
NOTES
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
E
15.29
15.87
0.602
0.625
E1
13.46
-
0.53
-
A2
1.50
2.49
0.059
0.098
e
5.46 BSC
b
0.99
1.40
0.039
0.055
ØK
0.254
b1
0.99
1.35
0.039
0.053
L
19.81
20.32
0.780
0.800
b2
1.65
2.39
0.065
0.094
L1
3.71
4.29
0.146
0.169
b3
1.65
2.34
0.065
0.092
ØP
3.56
3.66
0.14
0.144
c
0.38
0.89
0.015
0.035
Ø P1
-
6.98
-
0.275
NOTES
3
0.215 BSC
0.010
c1
0.38
0.84
0.015
0.033
Q
5.31
5.69
0.209
0.224
D
19.71
20.70
0.776
0.815
3
R
4.52
5.49
0.178
0.216
D1
13.08
-
0.515
-
4
S
D2
0.51
1.35
0.020
0.053
5.51 BSC
0.217 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 28-May-2018
Document Number: 95536
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
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