VS-E4PH6006L-N3

VS-E4PH6006L-N3 www.vishay.com Vishay Semiconductors Hyperfast Soft Recovery Diode, 60 A FRED Pt® Gen 4 FEATURES Base cathode • Gen 4 FRED Pt® technology 2 • Low IRRM and reverse recovery charge 2 • Very low forward voltage drop 1 3 TO-247AD 2L • Polyimide passivated chip for high reliability standard 3 Anode 1 Cathode • 175 °C operating junction temperature • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 60 A DESCRIPTION VR 600 V VF at IF 1.48 V Gen 4 Fred technology, state of the art, ultralow VF, soft switching optimized for Discontinuous (Critical) Mode (DCM) and IGBT F/W diode. The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching element and snubbers. trr typ. see Recovery table TJ max. 175 °C Package TO-247AD 2L Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS MAX. UNITS 600 V VR Average rectified forward current IF(AV) TC = 106 °C 60 Single pulse forward current IFSM TC = 25 °C, tp = 8.3 ms, half sine wave 425 Operating junction and storage temperatures TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. 600 - - IF = 50 A - 1.68 - IF = 60 A - 1.75 2.0 IF = 50 A, TJ = 125 °C - 1.44 - IF = 60 A, TJ = 125 °C - 1.55 - IF = 50 A, TJ = 150 °C - 1.39 - IF = 60 A, TJ = 150 °C - 1.48 1.65 VR = VR rated - - 50 TJ = 125 °C, VR = VR rated - - 500 VR = 600 V - 30 - UNITS V μA pF Revision: 19-Feb-2019 Document Number: 95898 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E4PH6006L-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge MIN. TYP. MAX. TJ = 25 °C TEST CONDITIONS - 68 - TJ = 125 °C - 92 - - 20 - - 40 - IF = 60 A dIF/dt = 1000 A/μs VR = 400 V TJ = 25 °C TJ = 125 °C Qrr UNITS ns A TJ = 25 °C - 945 - TJ = 125 °C - 2500 - MIN. TYP. MAX. - - 0.6 40 nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS UNITS Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Typical socket mount - - Thermal resistance, case to heat sink RthCS Mounting surface, flat, smooth and greased - 0.25 - - 6.0 - g - 0.21 - oz. 6.0 (5) - 12 (20) kgf · cm (lbf · in) Weight Mounting torque Case style TO-247AD 2L 1000 E4PH6006L 1000 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Marking device °C/W 100 TJ = 175 °C 10 TJ = 150°C TJ = 125°C TJ = 25 °C 1 175 °C 100 150 °C 10 125 °C 1 0.1 25 °C 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0 200 400 600 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 19-Feb-2019 Document Number: 95898 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E4PH6006L-N3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance Junction to Case (°C/W) 10 0.50 0.20 0.10 0.05 0.02 0.01 1 0.1 single pulse 0.01 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 180 Average Power Loss (W) Allowable Case Temperature (°C) 180 160 140 120 DC Square wave (D = 0.50) 80% rated VR applied 100 80 150 RMS limit 120 90 D = 0.01 D = 0.05 D = 0.10 D = 0.20 D = 0.50 60 30 0 0 20 40 60 80 100 0 10 20 30 40 50 60 70 80 90 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Max. Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see Fig.5) PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR = rated VR (1) Revision: 19-Feb-2019 Document Number: 95898 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E4PH6006L-N3 www.vishay.com Vishay Semiconductors 3000 130 120 2500 110 125 °C 125 °C Qrr (nC) trr (ns) 100 2000 90 80 25 °C 1500 1000 25 °C 70 500 60 50 0 400 500 600 700 800 900 400 1000 500 600 700 800 900 1000 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt 50 45 40 35 125 °C Irec (A) 30 25 20 25 °C 15 10 5 0 400 500 600 700 800 900 1000 dIF/dt (A/μs) Fig. 9 - Typical Reverse Recovery vs. dIF/dt Revision: 19-Feb-2019 Document Number: 95898 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E4PH6006L-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E 4 P H 60 06 L -N3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Circuit configuration: E = single diode 2 pins 3 - FRED Gen 4 4 - P = TO-247 package 5 - Process type: H = hyperfast recovery 6 - Current rating (60 = 60 A) 7 - Voltage rating (06 = 600 V) 8 - L = long lead 9 - Environmental digit: -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-E4PH6006L-N3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95536 Part marking information www.vishay.com/doc?95648 Revision: 19-Feb-2019 Document Number: 95898 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 2L DIMENSIONS in millimeters and inches A A (3) (6) F P E B (2) R/2 A2 S (Datum B) Ø K M D BM F P1 A D2 Q 2xR (2) D1 (4) D 1, 2 4 D 3 Thermal pad (5) L1 C L See view B (4) E1 A 0.01 M D B M View A - A C 2 x b2 2xb 2x e A1 0.10 M C A M (b1, b3) Plating Base metal D D (c) c1 C C (b, b2) (4) Section C - C, D - D SYMBOL MILLIMETERS View B INCHES MIN. MAX. MIN. MAX. A 4.65 5.31 0.183 0.209 A1 2.21 2.59 0.087 0.102 NOTES SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. E 15.29 15.87 0.602 0.625 E1 13.46 - 0.53 - A2 1.50 2.49 0.059 0.098 e 5.46 BSC b 0.99 1.40 0.039 0.055 ØK 0.254 b1 0.99 1.35 0.039 0.053 L 19.81 20.32 0.780 0.800 b2 1.65 2.39 0.065 0.094 L1 3.71 4.29 0.146 0.169 b3 1.65 2.34 0.065 0.092 ØP 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 Ø P1 - 6.98 - 0.275 NOTES 3 0.215 BSC 0.010 c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224 D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - 4 S D2 0.51 1.35 0.020 0.053 5.51 BSC 0.217 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95536 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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