VS-E4TU2006FP-N3

VS-E4TU2006FP-N3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 20 A FRED Pt® FEATURES • Low forward voltage drop • Ultrafast soft recovery time • 175 °C operating junction temperature 1 • Low leakage current • Fully isolated package (VINS = 2500 VRMS) 2 TO-220 FullPAK 2L • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 Cathode 2 Anode DESCRIPTION Ultralow VF, soft-switching ultrafast rectifiers optimized for Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC). LINKS TO ADDITIONAL RESOURCES 3D 3D The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching element and snubbers. 3D Models PRIMARY CHARACTERISTICS IF(AV) 20 A VR 600 V The device is also intended for use as a freewheeling diode in power supplies and other power switching applications. VF at IF 1.26 V trr (typ.) 61 ns TJ max. 175 °C Package TO-220 FullPAK 2L Circuit configuration Single APPLICATIONS AC/DC SMPS 70 W to 400 W e.g. laptop and printer AC adaptors, desktop PC, TV and monitor, games units and DVD AC/DC power supplies. MECHANICAL DATA Case: TO-220 FullPAK 2L Molding compound meets UL 94 V-0 flammability rating Terminals: J-STD-002 matte tin plated leads, solderable per ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current in DC IF(AV) TC = 102 °C 20 Non-repetitive peak surge current IFSM TJ = 25 °C 190 Operating junction and storage temperatures TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance CT Series inductance LS TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. 600 - - UNITS V IF = 20 A - 1.4 1.63 IF = 20 A, TJ = 125 °C - 1.26 1.49 VR = VR rated - 0.3 15 TJ = 125 °C, VR = VR rated - 50 500 VR = 600 V - 18 - pF Measured lead to lead 5 mm from package body - 8 - nH μA Revision: 09-Feb-2021 Document Number: 96422 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E4TU2006FP-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr MIN. TYP. MAX. UNITS TJ = 25 °C TEST CONDITIONS - 61 - ns TJ = 125 °C - 87 - IF = 20 A dIF/dt = 1000 A/μs VR = 400 V TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C - 13 - - 21 - A - 480 - - 1080 - MIN. TYP. MAX. UNITS -55 - 175 °C nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Thermal resistance, junction to case RthJC - 2.5 3 Thermal resistance, junction to ambient RthJA Typical socket mount - - 70 Typical thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth, and greased - 0.5 - - 2 - g - 0.07 - oz. 6 (5) - 12 (10) kgf · cm (lbf · in) Weight Mounting torque Case style: 2L TO-220 FullPAK E4TU2006FP 1000 1000 175 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Marking device °C/W 100 TJ = 175 °C 10 TJ = 125 °C TJ = 25 °C 1 100 150 °C 10 125 °C 1 25 °C 0.1 0.01 0.001 0.3 0.8 1.3 1.8 2.3 2.8 3.3 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 09-Feb-2021 Document Number: 96422 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E4TU2006FP-N3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.00001 0.0001 0.001 Single Pulse (Thermal Resistance) 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 50 45 160 140 DC 120 100 Square wave (D = 0.50) rated VR applied 80 60 Average Power Loss (W) Allowable Case Temperature (°C) 180 RMS limit 40 35 30 25 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 22 0 5 10 15 20 25 30 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 09-Feb-2021 Document Number: 96422 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E4TU2006FP-N3 170 160 150 140 130 120 110 100 90 80 70 60 50 40 Vishay Semiconductors 1200 VR = 400 V VR = 400 V 1000 800 IF = 20 A Qrr (nC) trr (ns) www.vishay.com TJ = 125°C IF = 20 A 200 TJ = 125°C 400 IF = 20 A TJ = 25°C 200 TJ = 25°C 0 IF = 20 A 600 400 600 800 0 1000 0 200 400 600 800 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt 25 IF = 20 A TJ = 125 °C Irr (A) 20 VR = 400 V 15 10 IF = 20 A 5 0 TJ = 25 °C 0 200 400 600 800 1000 dIF/dt (A/µs) Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 09-Feb-2021 Document Number: 96422 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E4TU2006FP-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E 4 T U 20 06 FP -N3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Circuit configuration: E = single diode 3 - 4 = Gen 4 FRED Pt 4 - T = TO-220 5 - U = ultrafast recovery time 6 - Current code: 20 = 20 A 7 - Voltage code: 06 = 600 V 8 - FP = FullPAK 9 - Environmental digit: -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-E4TU2006FP-N3 QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96157 Part marking information www.vishay.com/doc?95392 SPICE model www.vishay.com/doc?96822 Revision: 09-Feb-2021 Document Number: 96422 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220 FullPAK DIMENSIONS in millimeters 3.40 Hole Ø 3.10 10.6 10.0 3.7 3.2 2.80 2.44 7.31 6.50 16.0 15.8 Mold flash bleeding 3.3 3.1 Exposed Cu 13.56 12.90 2.54 TYP. 0.61 0.38 0.9 0.7 2.85 2.65 1.20 1.47 1.30 1.05 2.54 TYP. Bottom view R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° 5° ± 0.5° Revision: 06-Jul-17 Document Number: 96157 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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