VS-E5PH3012L-N3
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Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt® G5
FEATURES
Base cathode
• Hyperfast and optimized Qrr
2
• Best in class forward voltage drop and switching
losses trade off
2
• Optimized for high speed operation
1
• 175 °C maximum operating junction temperature
3
TO-247AD 2L
3
Anode
1
Cathode
• Polyimide passivation
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VR
1200 V
VF at IF at 125 °C
1.7 V
trr
32 ns
TJ max.
175 °C
Package
TO-247AD 2L
Circuit configuration
Single
DESCRIPTION / APPLICATIONS
Featuring a unique combination of low conduction and
switching losses, this rectifier is the right choice for high
frequency converters, both soft switched / resonant.
Specifically designed to improve efficiency of PFC and
output rectification stages of EV / HEV battery charging
stations, booster stage of solar inverters and UPS
applications, these devices are perfectly matched to
operate with MOSFETs or high speed IGBTs.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
1200
V
Repetitive peak reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 115 °C, D = 0.50
30
Non-repetitive peak surge current
IFSM
TC = 45 °C, tp = 10 ms, sine wave
250
IFRM
TC = 115 °C, D = 0.50, f = 20 kHz
Repetitive peak forward current
Operating junction and storage temperature
TJ, TStg
A
60
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
SYMBOL
VBR, VR
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
CT
Series inductance
LS
TEST CONDITIONS
MIN.
TYP.
MAX.
1200
-
-
IF = 30 A
-
1.9
2.3
IF = 30 A, TJ = 125 °C
-
1.7
-
IR = 100 μA
UNITS
V
VR = VR rated
-
-
50
TJ = 125 °C, VR = VR rated
-
-
500
VR = 200 V
-
17
-
pF
Measured to lead 5 mm from package body
-
8
-
nH
μA
Revision: 08-Feb-2021
Document Number: 96501
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VS-E5PH3012L-N3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
TEST CONDITIONS
trr
Peak recovery current
Qrr
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
TYP.
MAX.
-
32
-
TJ = 25 °C
-
113
-
TJ = 125 °C
-
175
-
-
17
-
-
26
-
IF = 20 A
dIF/dt = 600 A/μs
VR = 400 V
TJ = 25 °C
IRRM
Reverse recovery charge
MIN.
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
TJ = 125 °C
TJ = 25 °C
-
850
-
TJ = 125 °C
-
2150
-
TJ = 25 °C
-
85
-
TJ = 125 °C
-
132
-
-
30
-
-
43
-
IF = 30 A
dIF/dt = 1000 A/μs
VR = 800 V
TJ = 25 °C
TJ = 125 °C
Qrr
UNITS
ns
A
nC
ns
A
TJ = 25 °C
-
1350
-
TJ = 125 °C
-
3215
-
MIN.
TYP.
MAX.
UNITS
-
-
0.8
°C/W
-
5.5
-
g
-
0.2
-
oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
-55
-
175
°C
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Thermal resistance, junction-to-case
TEST CONDITIONS
RthJC
Weight
Mounting torque
Maximum junction and storage
temperature range
TJ, TStg
Case style: TO-247AD 2L
100
E5PH3012L
1000
TJ = 175 °C
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Marking device
10
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
1
0.1
100
TJ = 125 °C
10
TJ = 25 °C
1
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
0
200
400
600
800
1000
1200
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 08-Feb-2021
Document Number: 96501
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-E5PH3012L-N3
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Allowable Solder Pad Temperature (°C)
Vishay Semiconductors
CT - Junction Capacitance (pF)
1000
100
10
0
200
400
600
800
1000
1200
180
170
160
150
DC
140
130
120
Square wave (D = 0.50)
rated VR applied
110
100
0
VR - Reverse Voltage (V)
5
10
15
20
25
30
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
0.01
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 5 - Thermal Impedance ZthJC Characteristics
240
3600
TJ = 125 °C
220
TJ = 125 °C
3400
30 A, 800 V
3200
200
Qrr (nC)
trr (ns)
3000
180
20 A, 400 V
160
2800
2600
2400
140
20 A, 400 V
30 A, 800 V
2200
120
2000
100
1800
200
400
600
800
1000
1200
200
400
600
800
1000
1200
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
Revision: 08-Feb-2021
Document Number: 96501
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-E5PH3012L-N3
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Vishay Semiconductors
60
TJ = 125 °C
55
50
Irr (A)
45
40
30 A, 800 V
35
30
25
20 A, 400 V
20
15
10
200
400
600
800
1000
1200
dIF/dt (A/μs)
Fig. 8 - Typical Recovery Current vs. dIF/dt
(3)
trr
ta
IF
tb
t0
t10 %
0
0.1 IRRM
(2)
IRRM
Qrr (4)
di(rec)M/dt (5)
(1) diF/dt
Fig. 9 - Reverse Recovery Waveform and Definitions
Notes
diF/dt - rate of change of current through zero crossing
(2) I
RRM - peak reverse recovery current
(3) t - reverse recovery time measured from t , crossing point of negative going I , to point t
rr
0
F
10%, 0.1 IRRM
(4) Q - area under curve defined by t and t
rr
0
10 %
(1)
t 10 %
Q rr =
I ( t ) dt
t0
(5)
di(rec)M/dt - peak rate of change of current during tb portion of trr
Revision: 08-Feb-2021
Document Number: 96501
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-E5PH3012L-N3
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
E
5
P
H
30
12
L
-N3
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
E = single diode
3
-
5 = Fred generation 5
4
-
5
-
Package:
P = TO-247 package
H = hyperfast recovery
6
-
Current rating (30 = 30 A)
7
-
Voltage rating (12 = 1200 V)
8
-
Package: L = long lead (TO-247AD)
9
-
Environmental digit:
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-E5PH3012L-N3
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95536
Part marking information
www.vishay.com/doc?95648
Spice model
www.vishay.com/doc?96685
Revision: 08-Feb-2021
Document Number: 96501
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-247AD 2L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) F P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M D BM
F P1
A
D2
Q
2xR
(2)
D1 (4)
D
1, 2
4
D
3
Thermal pad
(5) L1
C
L
See view B
(4)
E1
A
0.01 M D B M
View A - A
C
2 x b2
2xb
2x e
A1
0.10 M C A M
(b1, b3)
Plating
Base metal
D D
(c)
c1
C
C
(b, b2)
(4)
Section C - C, D - D
SYMBOL
MILLIMETERS
View B
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.65
5.31
0.183
0.209
A1
2.21
2.59
0.087
0.102
NOTES
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
E
15.29
15.87
0.602
0.625
E1
13.46
-
0.53
-
A2
1.50
2.49
0.059
0.098
e
5.46 BSC
b
0.99
1.40
0.039
0.055
ØK
0.254
b1
0.99
1.35
0.039
0.053
L
19.81
20.32
0.780
0.800
b2
1.65
2.39
0.065
0.094
L1
3.71
4.29
0.146
0.169
b3
1.65
2.34
0.065
0.092
ØP
3.56
3.66
0.14
0.144
c
0.38
0.89
0.015
0.035
Ø P1
-
6.98
-
0.275
NOTES
3
0.215 BSC
0.010
c1
0.38
0.84
0.015
0.033
Q
5.31
5.69
0.209
0.224
D
19.71
20.70
0.776
0.815
3
R
4.52
5.49
0.178
0.216
D1
13.08
-
0.515
-
4
S
D2
0.51
1.35
0.020
0.053
5.51 BSC
0.217 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 28-May-2018
Document Number: 95536
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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