VS-E5PH6006L-N3

VS-E5PH6006L-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt® G5 FEATURES Base cathode • Hyperfast and optimized Qrr 2 • Best in class forward voltage drop and switching losses trade off 2 • Optimized for high speed operation 1 • 175 °C maximum operating junction temperature 3 TO-247AD 2L 3 Anode 1 Cathode • Polyimide passivation • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D DESCRIPTION / APPLICATIONS 3D Models Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for soft switched and resonant converters, as well as medium frequency hard switching converters. This device is specifically designed to improve efficiency of high speed LLC output rectification stages of EV / HEV battery charging stations and high frequency stages of UPS applications. PRIMARY CHARACTERISTICS IF(AV) per leg 60 A VR 600 V VF at IF at 125 °C 1.2 V trr (typ.) 29 IFSM 500 TJ max. 175 °C Package TO-247AD 2L Circuit configuration Single MECHANICAL DATA Case: TO-247AD 2L Molding compound meets UL 94 V-0 flammability rating Terminal: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 110 °C, D = 0.50 60 Non-repetitive peak surge current IFSM TC = 25 °C, tp = 10 ms, sine wave 500 Repetitive peak forward current IFRM TC = 110 °C, D = 0.50, f = 20 kHz 120 Operating junction and storage temperature TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance CT Series inductance LS TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. 600 - - IF = 60 A - 1.4 1.7 IF = 60 A, TJ = 125 °C - 1.2 - UNITS V VR = VR rated - - 25 TJ = 125 °C, VR = VR rated - - 500 VR = 200 V - 65 - pF Measured to lead 5 mm from package body - 8 - nH μA Revision: 16-Jul-2021 Document Number: 96755 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5PH6006L-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge MIN. TYP. MAX. - 29 - TJ = 25 °C - 49 - TJ = 125 °C - 74 - - 21 - - 43 - TJ = 25 °C IRRM Reverse recovery charge TEST CONDITIONS IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V TJ = 125 °C TJ = 25 °C - 640 - TJ = 125 °C - 1979 - TJ = 25 °C - 54 - TJ = 125 °C - 82 - - 22 - - 47 - TJ = 25 °C TJ = 125 °C Qrr IF = 40 A dIF/dt = 1000 A/μs VR = 400 V IF = 60 A dIF/dt = 1000 A/μs VR = 400 V UNITS ns A nC ns A TJ = 25 °C - 790 - TJ = 125 °C - 2385 - MIN. TYP. MAX. UNITS - - 0.63 °C/W - 5.5 - g - 0.2 - oz. 6 (5.0) - 12 (10) kgf · cm (lbf · in) -55 - 175 °C nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction-to-case TEST CONDITIONS RthJC Weight Mounting torque Maximum junction and storage temperature range TJ, TStg Case style TO-247AD 2L 100 E5PH6006L 10000 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Marking device 10 TJ = 175°C 1 TJ = 125°C TJ = 25°C 0.1 1000 TJ = 175 °C 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 16-Jul-2021 Document Number: 96755 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5PH6006L-N3 www.vishay.com Allowable Solder Pad Temperature (°C) Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 10 0 100 200 300 400 500 600 180 170 160 150 DC 140 130 Square wave (D = 0.50) rated VR applied 120 110 100 0 VR - Reverse Voltage (V) 10 20 30 40 50 60 70 IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current 140 RMS limit Average Power Loss (W) 120 100 80 D = 0.01 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 60 40 20 0 0 20 40 60 80 100 IF(AV) - Average Forward Current (A) Fig. 5 - Average Power Loss vs. Average Forward Current ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 0.01 DC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 6 - Thermal Impedance ZthJC Characteristics Revision: 16-Jul-2021 Document Number: 96755 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5PH6006L-N3 www.vishay.com Vishay Semiconductors 200 300 TJ = 125 °C, VR = 400 V IF = 60 A, VR = 400 V, low dI/dt 175 250 IF = 120 A 200 125 °C IF = 60 A trr (ns) trr (ns) 150 125 100 150 25 °C 100 IF = 30 A 75 In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating 50 50 0 100 1000 0 20 40 60 80 100 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 10 - Typical Reverse Recovery Time vs. dIF/dt 4000 1000 In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating TJ = 125 °C 3600 VR = 400 V 800 IF = 120 A 3200 Qrr (nC) Qrr (nC) 125 °C 2800 IF = 60 A 2400 2000 600 400 IF = 60 A, VR = 400 V, low dI/dt 1600 200 IF = 30 A 1200 800 25 °C 0 100 0 1000 20 40 60 80 100 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt Fig. 11 - Typical Reverse Recovery Charge vs. dIF/dt 65 12 60 TJ = 125 °C 55 VR = 400 V In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating IF = 120 A 10 50 IF = 60 A IF = 60 A, VR = 400 V, low dI/dt 8 40 Irr (A) Irr (A) 45 35 30 25 4 IF = 30 A 20 125 °C 6 15 2 25 °C 10 5 0 100 1000 0 20 40 60 80 100 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt Fig. 12 - Typical Reverse Recovery Current vs. dIF/dt Revision: 16-Jul-2021 Document Number: 96755 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5PH6006L-N3 www.vishay.com Vishay Semiconductors (3) trr ta IF tb t0 t10 % 0 0.1 IRRM (2) Qrr (4) IRRM di(rec)M/dt (5) (1) diF/dt Fig. 13 - Reverse Recovery Waveform and Definitions Notes (1) di /dt - rate of change of current through zero crossing F (2) I RRM - peak reverse recovery current (3) t - reverse recovery time measured from t , crossing point of negative going I , to point t rr 0 F 10%, 0.1 IRRM (4) Q - area under curve defined by t and t rr 0 10 % t 10 %  Q rr = I  t  dt t0 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr ORDERING INFORMATION TABLE Device code VS- E 5 P H 60 06 L -N3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - 3 - Circuit configuration E = single diode 5 = Fred generation 5 4 - 5 - Package: P = TO-247 package H = hyperfast recovery 6 - Current rating (60 = 60 A) 7 - Voltage rating (06 = 600 V) 8 - Package: L = long lead (TO-247AD) 9 - Environmental digit: -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-E5PH6006L-N3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95536 Part marking information www.vishay.com/doc?95648 Revision: 16-Jul-2021 Document Number: 96755 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 2L DIMENSIONS in millimeters and inches A A (3) (6) F P E B (2) R/2 A2 S (Datum B) Ø K M D BM F P1 A D2 Q 2xR (2) D1 (4) D 1, 2 4 D 3 Thermal pad (5) L1 C L See view B (4) E1 A 0.01 M D B M View A - A C 2 x b2 2xb 2x e A1 0.10 M C A M (b1, b3) Plating Base metal D D (c) c1 C C (b, b2) (4) Section C - C, D - D SYMBOL MILLIMETERS View B INCHES MIN. MAX. MIN. MAX. A 4.65 5.31 0.183 0.209 A1 2.21 2.59 0.087 0.102 NOTES SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. E 15.29 15.87 0.602 0.625 E1 13.46 - 0.53 - A2 1.50 2.49 0.059 0.098 e 5.46 BSC b 0.99 1.40 0.039 0.055 ØK 0.254 b1 0.99 1.35 0.039 0.053 L 19.81 20.32 0.780 0.800 b2 1.65 2.39 0.065 0.094 L1 3.71 4.29 0.146 0.169 b3 1.65 2.34 0.065 0.092 ØP 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 Ø P1 - 6.98 - 0.275 NOTES 3 0.215 BSC 0.010 c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224 D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - 4 S D2 0.51 1.35 0.020 0.053 5.51 BSC 0.217 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95536 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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