VS-E5PH7506L-N3
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Vishay Semiconductors
Hyperfast Rectifier, 75 A FRED Pt® G5
FEATURES
Base cathode
• Hyperfast and optimized Qrr
2
• Best in class forward voltage drop and switching
losses trade off
2
• Optimized for high speed operation
1
• 175 °C maximum operating junction temperature
3
TO-247AD 2L
3
Anode
1
Cathode
• Polyimide passivation
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
75 A
VR
600 V
VF at IF at 125 °C
1.2 V
trr (typ.)
32
IFSM
615
TJ max.
175 °C
Package
TO-247AD 2L
Circuit configuration
Single
DESCRIPTION / APPLICATIONS
Featuring a unique combination of low conduction and
switching losses, this rectifier is the right choice for soft
switched and resonant converters, as well as medium
frequency hard switching converters. This device is
specifically designed to improve efficiency of high speed
LLC output rectification stages of EV / HEV battery charging
stations and high frequency stages of UPS applications.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
600
V
Repetitive peak reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 113 °C, D = 0.50
75
Non-repetitive peak surge current
IFSM
TC = 25 °C, tp = 10 ms, sine wave
615
Repetitive peak forward current
IFRM
TC = 113 °C, D = 0.50, f = 20 kHz
150
Operating junction and storage temperature
TJ, TStg
A
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
SYMBOL
VBR, VR
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
CT
Series inductance
LS
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 75 A
-
1.3
1.7
IF = 75 A, TJ = 125 °C
-
1.2
-
IR = 100 μA
UNITS
V
VR = VR rated
-
-
25
TJ = 125 °C, VR = VR rated
-
-
500
VR = 200 V
-
96
-
pF
Measured to lead 5 mm from package body
-
8
-
nH
μA
Revision: 08-Feb-2021
Document Number: 96756
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
Qrr
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
MIN.
TYP.
MAX.
-
32
-
TJ = 25 °C
-
52
-
TJ = 125 °C
-
82
-
-
24
-
-
51
-
TJ = 25 °C
IRRM
Reverse recovery charge
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
TJ = 125 °C
TJ = 25 °C
-
805
-
TJ = 125 °C
-
2515
-
TJ = 25 °C
-
57
-
TJ = 125 °C
-
90
-
-
28
-
-
58
-
TJ = 25 °C
TJ = 125 °C
Qrr
IF = 50 A
dIF/dt = 1000 A/μs
VR = 400 V
IF = 75 A
dIF/dt = 1000 A/μs
VR = 400 V
UNITS
ns
A
nC
ns
A
TJ = 25 °C
-
969
-
TJ = 125 °C
-
3090
-
MIN.
TYP.
MAX.
UNITS
-
-
0.5
°C/W
-
5.5
-
g
-
0.2
-
oz.
6
(5)
-
12
(10)
kgf · cm
(lbf · in)
-55
-
175
°C
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Thermal resistance, junction-to-case
TEST CONDITIONS
RthJC
Weight
Mounting torque
Maximum junction and storage temperature range
TJ, TStg
Case style TO-247AD 2L
1000
E5PH7506L
1000
TJ = 175 °C
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Marking device
100
TJ = 175 °C
10
TJ = 125 °C
TJ = 25 °C
1
100
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0.01
0.1
0
0.5
1.0
1.5
2.0
VF - Forward Voltage Drop (V)
Fig. 1 - Forward Voltage Drop Characteristics, Per Leg
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage,
Per Leg
Revision: 08-Feb-2021
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Allowable Solder Pad Temperature (°C)
Vishay Semiconductors
CT - Junction Capacitance (pF)
1000
100
10
0
100
200
300
400
500
600
180
170
160
150
DC
140
130
120
110
Square wave (D = 0.50)
rated VR applied
100
90
80
0
VR - Reverse Voltage (V)
10
20
30
40
50
60
70
80
IF(AV) - Average Forward Current (A)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage, Per Leg
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current, Per Leg
Average Power Loss (W)
160
140
RMS limit
120
100
D = 0.01
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
80
60
40
20
0
0
20
40
60
80
100
120
IF(AV) - Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics, Per Leg
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
0.01
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 6 - Transient Thermal Impedance, Junction to Case, Per Leg
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225
350
TJ = 125°C, VR = 400 V
IF = 75 A, VR = 400 V, low dI/dt
200
300
250
IF = 150 A
150
IF = 75 A
trr (ns)
trr (ns)
175
125
100
125 °C
200
150
25 °C
100
75
In this dI/dt range curves are not dependent
from applied IF switching current, from 0.5 to
2 times IF(AV) rating
50
IF = 37.5 A
50
0
100
1000
0
20
40
60
80
100
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt, Per Leg
Fig. 10 - Typical Reverse Recovery Time vs. dIF/dt, Per Leg
4500
1500
In this dI/dt range curves are not dependent
from applied IF switching current, from 0.5 to
2 times IF(AV) rating
TJ = 125 °C
4000
VR = 400 V
IF = 150 A
1200
3000
IF = 75 A
2500
IF = 37.5 A
Qrr (nC)
Qrr (nC)
3500
900
125 °C
600
IF = 75 A, VR = 400 V, low dI/dt
2000
300
25 °C
1500
0
1000
1000
0
20
40
60
80
100
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt, Per Leg
Fig. 11 - Typical Reverse Recovery Charge vs. dIF/dt, Per Leg
16
70
65
60
55
50
45
40
35
30
25
20
15
10
5
TJ = 125 °C
IF = 150 A
VR = 400 V
In this dI/dt range curves are not dependent
from applied IF switching current, from 0.5 to
2 times IF(AV) rating
14
12
IF = 75 A
IF = 75 A, VR = 400 V, low dI/dt
10
Irr (A)
Irr (A)
100
8
125 °C
6
IF = 37.5 A
4
25 °C
2
0
100
1000
0
20
40
60
80
100
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt, Per Leg
Fig. 12 - Typical Reverse Recovery Current vs. dIF/dt, Per Leg
Revision: 08-Feb-2021
Document Number: 96756
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Vishay Semiconductors
(3)
trr
ta
IF
tb
t0
t10 %
0
0.1 IRRM
(2)
Qrr (4)
IRRM
di(rec)M/dt (5)
(1) diF/dt
Fig. 13 - Reverse Recovery Waveform and Definitions
Notes
diF/dt - rate of change of current through zero crossing
IRRM - peak reverse recovery current
trr - reverse recovery time measured from t0, crossing point of negative going IF, to point t10%, 0.1 IRRM
(4) Q - area under curve defined by t and t
rr
0
10 %
(1)
(2)
(3)
t 10 %
Q rr =
I ( t ) dt
t0
(5)
di(rec)M/dt - peak rate of change of current during tb portion of trr
ORDERING INFORMATION TABLE
Device code
VS-
E
5
P
H
75
06
L
-N3
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
E = single diode
3
-
5 = Fred generation 5
4
-
5
-
Package:
P = TO-247 package
H = hyperfast recovery
6
-
Current rating (75 = 75 A)
7
-
Voltage rating (06 = 600 V)
8
-
Package: L = long lead (TO-247AD)
9
-
Environmental digit:
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-E5PH7506L-N3
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95536
Part marking information
www.vishay.com/doc?95648
Revision: 08-Feb-2021
Document Number: 96756
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Outline Dimensions
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Vishay Semiconductors
TO-247AD 2L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) F P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M D BM
F P1
A
D2
Q
2xR
(2)
D1 (4)
D
1, 2
4
D
3
Thermal pad
(5) L1
C
L
See view B
(4)
E1
A
0.01 M D B M
View A - A
C
2 x b2
2xb
2x e
A1
0.10 M C A M
(b1, b3)
Plating
Base metal
D D
(c)
c1
C
C
(b, b2)
(4)
Section C - C, D - D
SYMBOL
MILLIMETERS
View B
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.65
5.31
0.183
0.209
A1
2.21
2.59
0.087
0.102
NOTES
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
E
15.29
15.87
0.602
0.625
E1
13.46
-
0.53
-
A2
1.50
2.49
0.059
0.098
e
5.46 BSC
b
0.99
1.40
0.039
0.055
ØK
0.254
b1
0.99
1.35
0.039
0.053
L
19.81
20.32
0.780
0.800
b2
1.65
2.39
0.065
0.094
L1
3.71
4.29
0.146
0.169
b3
1.65
2.34
0.065
0.092
ØP
3.56
3.66
0.14
0.144
c
0.38
0.89
0.015
0.035
Ø P1
-
6.98
-
0.275
NOTES
3
0.215 BSC
0.010
c1
0.38
0.84
0.015
0.033
Q
5.31
5.69
0.209
0.224
D
19.71
20.70
0.776
0.815
3
R
4.52
5.49
0.178
0.216
D1
13.08
-
0.515
-
4
S
D2
0.51
1.35
0.020
0.053
5.51 BSC
0.217 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 28-May-2018
Document Number: 95536
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